Počet záznamov: 1
Conductivity and Hall effect of freestanding highly-resistive epitaxial GaN:Fe substrates
Názov Conductivity and Hall effect of freestanding highly-resistive epitaxial GaN:Fe substrates Autor Kordoš Peter SAVELEK - Elektrotechnický ústav SAV Spoluautori Morvic Marian SAVELEK - Elektrotechnický ústav SAV Betko Július Novák Jozef 1951 SAVELEK - Elektrotechnický ústav SAV Flynn J. Brandes Georg Zdroj.dok. Applied Physics Letters. Vol. 85, (2004), p. 5616-5620 Jazyk dok. eng - angličtina Krajina US - Spojené štáty Druh dok. rozpis článkov z periodík (rbx) Ohlasy KASHIWAGI, T. - SONODA, S. - YASHIRO, H. - ISHIHARA, Y. - USUI, A. - AKASAKA, Y. - HAGIWARA, M. In JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS. ISSN 0021-4922, FEB 2007, vol. 46, no. 2, p. 581-585. GOGOVA, D. - HEMMINGSSON, C. - MONEMAR, B. - TALIK, E. - KRUCZEK, M. - TUOMISTO, F. - SAARINEN, K.In JOURNAL OF PHYSICS D-APPLIED PHYSICS. ISSN 0022-3727, JUL 21 2005, vol. 38, no. 14, p. 2332-2337. BOUGRIOUA, Z. - AZIZE, M. - BEAUMONT, B. - GIBART, P. - MALINAUSKAS, T. - NEIMONTAS, K. - MEKYS, A. - STORASTA, J. - JARASIUNAS, K. In JOURNAL OF CRYSTAL GROWTH. ISSN 0022-0248, MAR 1 2007, vol. 300, no. 1, p. 228-232. MURET, P. - PERNOT, J. - AZIZE, M. - BOUGRIOUA, Z. In JOURNAL OF APPLIED PHYSICS. ISSN 0021-8979, SEP 1 2007, vol. 102, no. 5. WOLOS, A. - KAMINSKA, M. In SPINTRONICS. 2008, vol. 82, p. 325-369. KOVAC, J. - UHEREK, F. - DONOVAL, D. - KOVAC, J. - SATKA, A. In MORE THAN MOORE: CREATING HIGH VALUE MICRO/NANOELECTRONICS SYSTEMS. 2009, p. 203-238. Tao, Z.-K., Chen, L. Nanjing Youdian Daxue Xuebao (Ziran Kexue Ban)/Journal of Nanjing University of Posts and Telecommunications (Natural Science)32 (2012) , pp. 153 CHENG, J. - ZHOU, J. - XU, W. - DONG, P. In MODERN PHYSICS LETTERS B. FEB 10 2014, vol. 28, no. 4. HORITA, M. - NARITA, T. - KACHI, T. - SUDA, J. Identification of origin ofE(C)-0.6 eV electron trap level by correlation with iron concentration in n-type GaN grown on GaN freestanding substrate by metalorganic vapor phase epitaxy. In APPLIED PHYSICS EXPRESS. ISSN 1882-0778, JUL 1 2020, vol. 13, no. 7. OISHI, T. - ITO, K. A simulation study of the impact of traps in the GaN substrate on the electrical characteristics of an AlGaN/GaN HEMT with a thin channel layer. In JOURNAL OF COMPUTATIONAL ELECTRONICS. ISSN 1569-8025, DEC 2021, vol. 20, no. 6, SI, p. 2441-2455. FUKUDA, H. - NAGAKUBO, A. - USAMI, S. - IKEDA, M. - IMANISHI, M. - YOSHIMURA, M. - MORI, Y. - ADACHI, K. - OGI, H. Determination of the electron trap level in Fe-doped GaN by phonon-assisted conduction phenomenon. In APPLIED PHYSICS EXPRESS. ISSN 1882-0778, JUL 1 2022, vol. 15, no. 7. Dostupné na: https://doi.org/10.35848/1882-0786/ac749c. Kategória ADCA - Vedecké práce v zahraničných karentovaných časopisoch impaktovaných Kategória (od 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Typ výstupu článok Rok vykazovania 2004 
článok
rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2004 2003 4.049
Počet záznamov: 1