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InAlN/GaN HEMTs: A first insight into technological optimization
Názov InAlN/GaN HEMTs: A first insight into technological optimization Autor Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ORCID Spoluautori Kostopoulos T. Konstantinidis G. Carlin J.-F. Georgakilas A. Pogany D. SAVELEK - Elektrotechnický ústav SAV Zdroj.dok. . Vol. 53, (2006), p. 422-426 IEEE Transactions on Electron Devices Jazyk dok. eng - angličtina Krajina US - Spojené štáty Druh dok. rozpis článkov z periodík (rbx) Ohlasy JESSEN, G.H. - GILLESPIE, J.K. - VIA, G.D. - CRESPO, A. - LANGLEY, D. - AUMER, M.E. - WARD, C.S. - HENRY, H.G. - THOMSON, D.B. - PARTLOW, D.P. IEEE ELECTRON DEVICE LETTERS. ISSN 0741-3106, MAY 2007, vol. 28, no. 5, p. 354-356. YANG, Q. - LI, D.J. - YAO, B.L. APPLIED SURFACE SCIENCE. ISSN 0169-4332, FEB 15 2007, vol. 253, no. 8, p. 3927-3929. Šebok, J., Petrus, M., Harmatha, L., Kováč, J., Nemec, M., Benkovská, J., and Škriniarová, J.: In: 16th Inter. Conf. on Applied Physics of Condensed Matter – APCOM. Eds. J. Vajda and M. Weis. 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článok
rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2006 2005 2.105 Q1 1.738 Q1
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