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Comparison of AlGaN/GaN MSM varactor diodes based on HFET and MOSHEFT layer structures
Názov Comparison of AlGaN/GaN MSM varactor diodes based on HFET and MOSHEFT layer structures Autor Marso M. Spoluautori Fox A. Heidelberg G. Kordoš Peter SAVELEK - Elektrotechnický ústav SAV Lüth Hans Zdroj.dok. . Vol. 27, (2006), p. 945-947 IEEE Electron Devices Letters Jazyk dok. eng - angličtina Krajina US - Spojené štáty Druh dok. rozpis článkov z periodík (rbx) Ohlasy FERNG, Y.C. - CHANG, L.B. - DAS, A. - CHEN, C.Y. - LIN, C.C. In ELECTROCHEMICAL AND SOLID STATE LETTERS. 2010, vol. 13, no. 10, p. H350-H353. LU, W. - WANG, L.Q. - GU, S.Y. - APLIN, D.P.R. - ESTRADA, D.M. - YU, P.K.L. - ASBECK, P.M. In IEEE ELECTRON DEVICE LETTERS. OCT 2010, vol. 31, no. 10, p. 1119-1121. LEE, K.H. - CHANG, P.C. - CHANG, S.J. - SU, Y.K. - WANG, Y.C. - LIU, C.H. In JOURNAL OF ELECTRONIC MATERIALS. JAN 2010, vol. 39, no. 1, p. 29-33. 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JAN 2017, vol. 38, no. 1, p. 107-110. LI, Q. - AN, N. - TANG, Y. - JIANG, J. - LI, L. - ZENG, J.P. - TAN, W. Metal-Semiconductor-Metal (MSM) Varactor Based on AlGaN/GaN Heterostructure with Cutoff Frequency of 914.5GHz for Terahertz Frequency Multiplication. In 2018 3RD IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUITS AND MICROSYSTEMS (ICICM). 2018, p. 86-89. LI, Qian - AN, Ning - ZENG, Jian-Ping - JIANG, Jun - LI, Li. E-beam fabricated Metal-Semiconductor-Metal (MSM) varactor based on AlGaN/GaN HEMT with rectangular gate of 450nm. In 2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2019, vol., no., pp. CAI, Qing - YOU, Haifan - GUO, Hui - WANG, Jin - LIU, Bin - XIE, Zili - CHEN, Dunjun - LU, Hai - ZHENG, Youdou - ZHANG, Rong. Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays. In LIGHT-SCIENCE & APPLICATIONS. ISSN 2047-7538, 2021, vol. 10, no. 1, pp. Dostupné na: https://doi.org/10.1038/s41377-021-00527-4. MENG, Jin - ZHU, HaoTian - ZHANG, DeHai - LI, Hao - LI, YuHang - LIU, SiYu. Design of a 120GHz Doubler based on AlGaN/GaN Schottky diode. In 2021 46TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER AND TERAHERTZ WAVES (IRMMW-THZ). ISSN 2162-2027, 2021, vol., no., pp. Dostupné na: https://doi.org/10.1109/IRMMW-THz50926.2021.9567587. WANG, W.G. - LI, Q. - AN, N. - ZENG, J.P. A Novel GaN-Based Metal-2DEG-Metal Varactor With Cutoff Frequency of 3.13 THz. In IEEE TRANSACTIONS ON ELECTRON DEVICES. ISSN 0018-9383, MAY 2022, vol. 69, no. 5, p. 2270-2274. Dostupné na: https://doi.org/10.1109/TED.2022.3155591. HSIEH, Y.L. - LO, H.Z. - NEE, T.E. - CHANG, C.N. - YANG, C.H. Study on epitaxial structure and substrate material variations for improving electrical reliability of the MSM AlGaN/GaN 2DEG varactors. In MICROELECTRONICS RELIABILITY. ISSN 0026-2714, MAR 2023, vol. 142. Dostupné na: https://doi.org/10.1016/j.microrel.2023.114905. Kategória ADCA - Vedecké práce v zahraničných karentovaných časopisoch impaktovaných Kategória (od 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Typ výstupu článok Rok vykazovania 2006 
článok
rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2006 2005 2.825 Q1 2.432 Q1
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