Počet záznamov: 1  

Current conduction and saturation mechanism in AlGaN/GaN ungated structures

  1. NázovCurrent conduction and saturation mechanism in AlGaN/GaN ungated structures
    Autor Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV    ORCID
    Spoluautori Bychikhin S.

    Pogany D.

    Gaquiere C.

    Morvan E.

    Zdroj.dok. Journal of Applied Physics. Vol. 99, (2006), no. 123720
    Jazyk dok.eng - angličtina
    KrajinaUS - Spojené štáty
    Druh dok.rozpis článkov z periodík (rbx)
    OhlasyDANILCHENKO, B.A. - OBUKHOV, I.A. - PASZKIEWICZ, T. - WOLSKI, S. - JEZOWSKI, A. SOLID STATE COMMUNICATIONS. ISSN 0038-1098, OCT 2007, vol. 144, no. 3-4, p. 114-117.
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    SARUA, A. - JI, H. - HILTON, K.P. - WALLIS, D.J. - UREN, M.J. - MARTIN, T. - KUBALL, M. In IEEE TRANSACTIONS ON ELECTRON DEVICES. DEC 2007, vol. 54, no. 12, p. 3152-3158.
    HU, C.Y. - HASHIZUME, T. - OHI, K. - TAJIMA, M. In APPLIED PHYSICS LETTERS. NOV 29 2010, vol. 97, no. 22.
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    MOENS, P. - CONSTANT, A. - BANERJEE, A. In POWER GAN DEVICES: MATERIALS, APPLICATIONS AND RELIABILITY. 2017, p. 319-344.
    FERNANDEZ, M. - PERPINA, X. - ROIG, J. - VELLVEHI, M. - BAUWENS, F. - JORDA, X. - TACK, M. In IEEE ELECTRON DEVICE LETTERS. APR 2017, vol. 38, no. 4, p. 505-508.
    MUHTADI, S. - HWANG, S.M. - COLEMAN, A. - ASIF, F. - SIMIN, G. - CHANDRASHEKHAR, M.V.S. - KHAN, A. In IEEE ELECTRON DEVICE LETTERS. JUL 2017, vol. 38, no. 7, p. 914-917.
    LI, He - LI, Xiao - WANG, Xiaodan - LYU, Xintong - CAI, Haiwei - ALSMADI, Yazan M. - LIU, Liming - BALA, Sandeep - WANG, Jin. Robustness of 650-V Enhancement-Mode GaN HEMTs Under Various Short-Circuit Conditions. In IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS. ISSN 0093-9994, 2019, vol. 55, no. 2, pp. 1807-1816.
    LIU, Y. - LV, Y.J. - GUO, S.S. - LUAN, Z.F. - CHENG, A.J. - LIN, Z.J. - YANG, Y.X. - JIANG, G.Y. - ZHOU, Y. A novel AlGaN/GaN heterostructure field-effect transistor based on open-gate technology. In SCIENTIFIC REPORTS. ISSN 2045-2322, NOV 17 2021, vol. 11, no. 1.
    SOKOLOVSKIJ, R. - ZHENG, H.Z. - LI, W.M. - ZHOU, G.N. - WANG, Q. - ZHANG, G.Q. - YU, H.Y. Application of a gateless AlGaN/GaN HEMT sensor for diesel soot particulate detection. In SENSORS AND ACTUATORS B-CHEMICAL. DEC 15 2021, vol. 349.
    ARREOLA-PINA, A.S. - MIMILA-ARROYO, J. Thermal reliability of deuterated AlGaN/GaN HEMTs. In MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. ISSN 1369-8001, MAR 1 2021, vol. 123.
    TAO, Q.Q. - WANG, J.Y. - ZHANG, B. - WANG, X. - LI, M.J. - CAO, Q.R. - WU, W.G. - MA, X.H. Investigation on mechanisms of current saturation in gateless AlGaN/GaN heterostructure device. In JAPANESE JOURNAL OF APPLIED PHYSICS. ISSN 0021-4922, FEB 1 2021, vol. 60, no. 2.
    GERRER, Thomas - CIMALLA, Volker. Direct low-temperature bonding of AlGaN/GaN thin film devices onto diamond substrates. In Thermal Management of Gallium Nitride Electronics, 2022-01-01, pp. 379-406. Dostupné na: https://doi.org/10.1016/B978-0-12-821084-0.00020-2.
    SERMUKSNIS, E. - JORUDAS, J. - SIMUKOVIC, A. - KOVALEVSKIJ, V. - KASALYNAS, I. Self-Heating of Annealed Ti/Al/Ni/Au Contacts to Two-Dimensional Electron Gas in AlGaN/GaN Heterostructures. In APPLIED SCIENCES-BASEL. NOV 2022, vol. 12, no. 21. Dostupné na: https://doi.org/10.3390/app122111079.
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    KategóriaADCA - Vedecké práce v zahraničných karentovaných časopisoch impaktovaných
    Kategória (od 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Typ výstupučlánok
    Rok vykazovania2006
    článok

    článok

    rokCCIFIF Q (best)JCR Av Jour IF PercSJRSJR Q (best)CiteScore
    A
    rok vydaniarok metrikyIFIF Q (best)SJRSJR Q (best)
    200620052.498Q12.055Q1
Počet záznamov: 1  

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