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Investigation of the thermal boundary resistance at the III-Nitride/substrate interface using optical methods
Názov Investigation of the thermal boundary resistance at the III-Nitride/substrate interface using optical methods Autor Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ORCID Spoluautori Bychikhin S. Pogany D. Gaquiere C. Pichonat E. Morvan E. Zdroj.dok. Journal of Applied Physics. Vol. 101, (2007), no. 054508. - New York : American Institute of Physics Jazyk dok. eng - angličtina Krajina US - Spojené štáty Druh dok. rozpis článkov z periodík (rbx) Ohlasy SARUA, A. - JI, H. - HILTON, K.P. - WALLIS, D.J. - UREN, M.J. - MARTIN, T. - KUBALL, M. IEEE TRANSACTIONS ON ELECTRON DEVICES. ISSN 0018-9383, DEC 2007, vol. 54, no. 12, p. 3152-3158. DENG, Y.Q. - ISLAM, M.D.M. - GAEVSKI, M. - YANG, Z.J. - ADIVARAHAN, V. - KHAN, A. In SOLID-STATE ELECTRONICS. JUL 2008, vol. 52, no. 7, p. 1106-1113. MACKENZIE, R. - LIM, J.J. - BULL, S. - SUJECKI, S. - LARKINS, E.C. In PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 2 2008. 2008, vol. 5, no. 2, p. 485-489. SOUDI, A. - DAWSON, R.D. - GU, Y. In ACS NANO. JAN 2011, vol. 5, no. 1, p. 255-262. Cho, J., Li, Y., Altman, D.H., Hoke, W.E., Asheghi, M., Goodson, K.E. Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC (2012) art. no. 6340094 Cho, J., Li, Y., Bozorg-Grayeli, E., Kodama, T., Asheghi, M., and Goodson, K.E., Francis, D., Ejeckam, F., Faili, F. InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITHERM (2012) art. no. 6231463 , pp. 435 Bozorg-Grayeli, E., Li, Z., Gambin, V.,Asheghi, M., Goodson, K.E. InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITHERM (2012) art. no. 6231541 , pp. 1059 Babić, D.I., Diduck, Q., Smart, J.,Francis, D., Faili, F., Ejeckam, F. MIPRO 2012 - 35th International Convention on Information and Communication Technology, Electronics and Microelectronics - Proceedings (2012) art. no. 6240612 , pp. 48 Wang, J., Wang, X., Pang, L., Chen, X.,Jin, Z., Liu, X. Journal of Semiconductors 33 (2012) , art. no. 094004 WANG, J.H. - WANG, X.H. - PANG, L. - CHEN, X.J. - LIU, X.Y. In CHINESE PHYSICS LETTERS. AUG 2012, vol. 29, no. 8. CHO, J.W. - LI, Z.J. - BOZORG-GRAYELI, E. - KODAMA, T. - FRANCIS, D. - EJECKAM, F. - FAILI, F. - ASHEGHI, M. - GOODSON, K.E. In 2012 13TH IEEE INTERSOCIETY CONFERENCE ON THERMAL AND THERMOMECHANICAL PHENOMENA IN ELECTRONIC SYSTEMS (ITHERM). 2012, p. 435-439. BOZORG-GRAYELI, E. - LI, Z.J. - GAMBIN, V. - ASHEGHI, M. - GOODSON, K.E. In 2012 13TH IEEE INTERSOCIETY CONFERENCE ON THERMAL AND THERMOMECHANICAL PHENOMENA IN ELECTRONIC SYSTEMS (ITHERM). 2012, p. 1059-1064. CHO, J.W. - LI, Y.Y. - ALTMAN, D.H. - HOKE, W.E. - ASHEGHI, M. - GOODSON, K.E. In 2012 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS). 2012. HJELMGREN, H. - THORSELL, M. - ANDERSSON, K. - RORSMAN, N. In IEEE TRANSACTIONS ON ELECTRON DEVICES. DEC 2012, vol. 59, no. 12, p. 3344-3349. CHO, J.W. - BOZORG-GRAYELI, E. - ALTMAN, D.H. - ASHEGHI, M. - GOODSON, K.E. In IEEE ELECTRON DEVICE LETTERS. MAR 2012, vol. 33, no. 3, p. 378-380. ZHENG, H. - JAGANNADHAM, K. In IEEE TRANSACTIONS ON ELECTRON DEVICES. JUN 2013, vol. 60, no. 6, p. 1911-1915. HAN, N. - CUONG, T.V. - HAN, M. - RYU, B.D. - CHANDRAMOHAN, S. - PARK, J.B. - KANG, J.H. - PARK, Y.J. - KO, K.B. - KIM, H.Y. - KIM, H.K. - RYU, J.H. - KATHARRIA, Y.S. - CHOI, C.J. - HONG, C.H. In NATURE COMMUNICATIONS. FEB 2013, vol. 4. CHO, J.W. - LI, Z.J. - BOZORG-GRAYELI, E. - KODAMA, T. - FRANCIS, D. - EJECKAM, F. - FAILI, F. - ASHEGHI, M. - GOODSON, K.E. In IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY. JAN 2013, vol. 3, no. 1, p. 79-85. Won, Y. , Cho, J., Agonafer, D., Asheghi, M., Goodson, K.E. Technical Digest - IEEE CSIC (2013) 6659222 DONOVAN, B. F. - SZWEJKOWSKI, C. J. - DUDA, J. C. - CHEAITO, R. - GASKINS, J. T. - YANG, C. -Y. P. - CONSTANTIN, C. - JONES, R. E. - HOPKINS, P. E. In APPLIED PHYSICS LETTERS. NOV 17 2014, vol. 105, no. 20. HWANG, Y.-H. - KANG, T.-S. - REN, F. - PEARTON, S. J. In JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. NOV 2014, vol. 32, no. 6. SCHWITTER, B. K. - PARKER, A. E. - MAHON, S. J. - FATTORINI, A. P. - HEIMLICH, Michael C. In IEEE TRANSACTIONS ON ELECTRON DEVICES. MAY 2014, vol. 61, no. 5, p. 1327-1334. WANG, Z. - TIAN, X. - LIANG, J. - ZHU, J. - TANG, D.- XU, K. In INTERNATIONAL JOURNAL OF THERMAL SCIENCES. MAY 2014, vol. 79, p. 266-275. BABIC, D.I. In IEEE TRANSACTIONS ON ELECTRON DEVICES. APR 2014, vol. 61, no. 4, p. 1047-1053. CHO, J. - LI, Y. - HOKE, W. E. - ALTMAN, D. H. - ASHEGHI, M. - GOODSON, K. E. In PHYSICAL REVIEW B. MAR 3 2014, vol. 89, no. 11. TALLARICO, A.N. - MAGNONE, P. - SANGIORGI, E. - FIEGNA, C. In 2014 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD). 2014, p. 233-236. SODAN, V. - OPRINS, H. - STOFFELS, S. - BAELMANS, M. - DE WOLF, I. In IEEE TRANSACTIONS ON ELECTRON DEVICES. AUG 2015, vol. 62, no. 8, p. 2416-2422. MIYAGAWA, R. - ERYU, O. In JAPANESE JOURNAL OF APPLIED PHYSICS. JUL 2015, vol. 54, no. 7. WON, Y. - CHO, J. - AGONAFER, D. - ASHEGHI, M. - GOODSON, K.E. In IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY. JUN 2015, vol. 5, no. 6, p. 737-744. ZHANG, Y.M. - FENG, S.W. - WANG, L. - JI, Y. - HAN, X.D. - SHI, L. - ZHAO, Y. In SEMICONDUCTOR SCIENCE AND TECHNOLOGY. MAY 2015, vol. 30, no. 5. WANG, Z.L. - SUN, M.M. - YAO, G. - TANG, D.W. - XU, K. In INTERNATIONAL JOURNAL OF THERMAL SCIENCES. JAN 2015, vol. 87, p. 178-186. PIOTROWSKA, A.B. - KAMINSKA, E.A. - WOJTASIAK, W. - GWAREK, W. - KUCHARSKI, R. - ZAJAC, M. - PRYSTAWKO, P. - KRUSZEWSKI, P. - EKIELSKI, M. - KACZMARSKI, J. - KOZUBAL, M. - TRAJNEROWICZ, A. - TAUBE, A. In GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 6. 2016, vol. 75, no. 12, p. 77-84. Wang, Z.-L., Tian, X., Yao, G.-C., Zhu, J., Tang, D.-W. Kung Cheng Je Wu Li Hsueh Pao/Journal of Engineering Thermophysics 35 (2014), pp. 2244-2247 Hwang, Y.H., Kang, T.-S., Ren, F., Pearton, S.J. ECS Transactions 66 (2015), pp. 223-230 LE, N.Q. - POLANCO, C.A. - RASTGARKAFSHGARKOLAEI, R. - ZHANG, J.J. - GHOSH, A.W. - NORRIS, P.M. In PHYSICAL REVIEW B. JUN 16 2017, vol. 95, no. 24. SODAN, V. - STOFFELS, S. - OPRINS, H. - DECOUTERE, S. - ALTMANN, F. - BAELMANS, M. - DE WOLF, I. Fast and Distributed Thermal Model for Thermal Modeling of GaN Power Devices. In IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY. OCT 2018, vol. 8, no. 10, p. 1747-1755. FEGHHI, R. - JOODAKI, M. Thermal analysis of microwave GaN-HEMTs in conventional and flip-chip assemblies. In INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING. OCT 2018, vol. 28, no. 8. ZHANG, G.B. - ZHAO, M. - YAN, C.L. - SUN, B. - WU, Z.G. - CHANG, H.D. - JIN, Z. - SUN, J. - LIU, H.G. Thermal Analysis of AlGaN/GaN High-Electron-Mobility Transistors with Graphene. In JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY. NOV 2018, vol. 18, no. 11, p. 7578-7583. WOJTASIAK, W. - GORALCZYK, M. - GRYGLEWSKI, D. - ZAJAC, M. - KUCHARSKI, R. - PRYSTAWKO, P. - PIOTROWSKA, A. - EKIELSKI, M. - KAMINSKA, E. - TAUBE, A. - WZOREK, M. AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts. In MICROMACHINES. NOV 2018, vol. 9, no. 11. SOLEIMANZADEH, R. - KHADAR, R.A. - NAAMOUN, M. - VAN ERP, R. - MATIOLI, E. Near-junction heat spreaders for hot spot thermal management of high power density electronic devices. In JOURNAL OF APPLIED PHYSICS. ISSN 0021-8979, OCT 28 2019, vol. 126, no. 16. DENG, S.C. - XIAO, C.D. - YUAN, J.L. - MA, D.K. - LI, J.H. - YANG, N. - HE, H. Thermal boundary resistance measurement and analysis across SiC/SiO2 interface. In APPLIED PHYSICS LETTERS. ISSN 0003-6951, SEP 2 2019, vol. 115, no. 10. MIYAGAWA, R. - ERYU, O. Formation of femtosecond laser-induced periodic nanostructures on GaN. In JAPANESE JOURNAL OF APPLIED PHYSICS. ISSN 0021-4922, JUN 1 2019, vol. 58, C. WU, M. - ZHANG, M. - ZHU, Q. - YANG, L. - MA, X.H. - HAO, Y. Characterization of self-heating in GaN high electron mobility transistors using channel resistance measurement. In JAPANESE JOURNAL OF APPLIED PHYSICS. ISSN 0021-4922, JUN 1 2019, vol. 58, C. ZHOU, Jing - ZHU, Jie - FAN, Xuan Hui - ZHANG, Zhong Yin - TANG, Da Wei. Numerical Analysis on Transient Heat Transfer in HEMTs With Graphene. In Kung Cheng Je Wu Li Hsueh Pao/Journal of Engineering Thermophysics. ISSN 0253231X, 2020-06-01, 41, 6, pp. 1462-1467. CHATTERJEE, B. - DUNDAR, C. - BEECHEM, T.E. - HELLER, E. - KENDIG, D. - KIM, H. - DONMEZER, N. - CHOI, S. Nanoscale electro-thermal interactions in AlGaN/GaN high electron mobility transistors. In JOURNAL OF APPLIED PHYSICS. ISSN 0021-8979, JAN 31 2020, vol. 127, no. 4. HSU, L.H. - LAI, Y.Y. - TU, P.T. - LANGPOKLAKPAM, C. - CHANG, Y.T. - HUANG, Y.W. - LEE, W.C. - TZOU, A.J. - CHENG, Y.J. - LIN, C.H. - KUO, H.C. - CHANG, E.Y. Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration. In MICROMACHINES. OCT 2021, vol. 12, no. 10. WARZOHA, R.J. - WILSON, A.A. - DONOVAN, B.F. - DONMEZER, N. - GIRI, A. - HOPKINS, P.E. - CHOI, S. - PAHINKAR, D. - SHI, J.J. - GRAHAM, S. Applications and Impacts of Nanoscale Thermal Transport in Electronics Packaging. In JOURNAL OF ELECTRONIC PACKAGING. ISSN 1043-7398, JUN 1 2021, vol. 143, no. 2. HUYNH, K. - LIAO, M. E. - YAN, X. - TOMKO, J. - PFEIFER, T. - DRAGOI, V. - RAZEK, N. - GUIOT, E. - CAULMILONE, R. - PAN, X. - HOPKIN, P. E. - GOORSKY, M. S. Reduction in Thermal Boundary Conductance of Direct Wafer Bonded GaN|Si Heterojunction Interfaces Annealed at High Temperatures. In 2022 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2022, 2022-01-01, pp. 387-389. YUAN, C. - HANUS, R. - GRAHAM, S. A review of thermoreflectance techniques for characterizing wide bandgap semiconductors' thermal properties and devices' temperatures. In JOURNAL OF APPLIED PHYSICS. ISSN 0021-8979, DEC 14 2022, vol. 132, no. 22. Dostupné na: https://doi.org/10.1063/5.0122200. ZHOU, J. - FAN, X.H. - ZHU, J. - ZHANG, Z.Y. - TANG, D.W. Systematic Investigations on the Thermal Management Performance of Graphite Thin Films for High-Electron-Mobility Transistors. In IEEE TRANSACTIONS ON ELECTRON DEVICES. ISSN 0018-9383, DEC 2022, vol. 69, no. 12, p. 6637-6643. Dostupné na: https://doi.org/10.1109/TED.2022.3217713. MIYAGAWA, R. - MATSUURA, H. - NAKAMURA, A. - ERYU, O. Formation of periodic nanostructures induced by circularly-polarized femtosecond laser. In JAPANESE JOURNAL OF APPLIED PHYSICS. ISSN 0021-4922, AUG 1 2022, vol. 61, no. SK. Dostupné na: https://doi.org/10.35848/1347-4065/ac5b28. BAO, W.L. - WANG, Z.L. - TANG, D.W. Phonon transport across GaN/AlN interface: Interfacial phonon modes and phonon local non-equilibrium analysis. In INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER. ISSN 0017-9310, FEB 2022, vol. 183, B. Dostupné na: https://doi.org/10.1016/j.ijheatmasstransfer.2021.122090. ZHAN, T.Z. - XU, M. - CAO, Z. - ZHENG, C. - KURITA, H. - NARITA, F. - WU, Y.J. - XU, Y.B. - WANG, H.D. - SONG, M.J. - WANG, W. - ZHOU, Y.G. - LIU, X.Q. - SHI, Y. - JIA, Y. - GUAN, S.J. - HANAJIRI, T. - MAEKAWA, T. - OKINO, A. - WATANABE, T. Effects of Thermal Boundary Resistance on Thermal Management of Gallium-Nitride-Based Semiconductor Devices: A Review. In MICROMACHINES. NOV 2023, vol. 14, no. 11. Dostupné na: https://doi.org/10.3390/mi14112076. FENG, T.L. - ZHOU, H. - CHENG, Z. - LARKIN, L.S. - NEUPANE, M.R. A Critical Review of Thermal Boundary Conductance across Wide and Ultrawide Bandgap Semiconductor Interfaces. In ACS APPLIED MATERIALS & INTERFACES. ISSN 1944-8244, JUN 16 2023, vol. 15, no. 25, p. 29655-29673. Dostupné na: https://doi.org/10.1021/acsami.3c02507. DOWNEY, B.P. - MACK, S. - XIE, A. - KATZER, D.S. - LANG, A.C. - CHAMPLAIN, J.G. - CAO, Y. - NEPAL, N. - GROWDEN, T.A. - GOKHALE, V.J. - HARDY, M.T. - BEAM, E. - LEE, C. - MEYER, D.J. Micro-Transfer Printing for Heterogeneous Integration of GaN and GaAs HEMTs. In IEEE TRANSACTIONS ON ELECTRON DEVICES. ISSN 0018-9383, JUN 2023, vol. 70, no. 6, SI, p. 2994-3000. Dostupné na: https://doi.org/10.1109/TED.2023.3269006. Kategória ADCA - Vedecké práce v zahraničných karentovaných časopisoch impaktovaných Kategória (od 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Typ výstupu článok Rok vykazovania 2007 
článok
rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2007 2006 2.316 Q1 1.944 Q1
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