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Gate insulation and drain current saturation mechanism in InAlN/GaN metal-oxide-semiconductor high-electron-mobility transistors
Názov Gate insulation and drain current saturation mechanism in InAlN/GaN metal-oxide-semiconductor high-electron-mobility transistors Autor Pozzovivo G. Spoluautori Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ORCID Golka S. Schrenk W. Strasser G. Pogany D. Čičo Karol SAVELEK - Elektrotechnický ústav SAV Ťapajna Milan 1977 SAVELEK - Elektrotechnický ústav SAV ORCID Fröhlich Karol 1954 SAVELEK - Elektrotechnický ústav SAV ORCID Carlin J.-F. Gonschorek M. Feltin E. Grandjean N. Zdroj.dok. . Vol. 91 (2007), no. 043509 Applied Physics Letters Jazyk dok. eng - angličtina Krajina US - Spojené štáty Druh dok. rozpis článkov z periodík (rbx) Ohlasy HUANG, L.H. - KAN, K.C. - LEE, C.T. In JOURNAL OF ELECTRONIC MATERIALS. APR 2009, vol. 38, no. 4, p. 529-532. ILIOPOULOS, E. - ADIKIMENAKIS, A. - GIESEN, C. - HEUKEN, M. - GEORGAKILAS, A. In APPLIED PHYSICS LETTERS. MAY 12 2008, vol. 92, no. 19. 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Kategória ADCA - Vedecké práce v zahraničných karentovaných časopisoch impaktovaných Kategória (od 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Typ výstupu článok Rok vykazovania 2007 
článok
rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2007 2006 3.977 Q1 3.459 Q1
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