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Technology and performance of InAlN/AlN/GaN HEMTs with gate insulation and current collapse suppression using ZrO2 or HfO2
Názov Technology and performance of InAlN/AlN/GaN HEMTs with gate insulation and current collapse suppression using ZrO2 or HfO2 Autor Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ORCID Spoluautori Pozzovivo G. Abermann S. Carlin J.-F. Gonschorek M. Feltin E. Grandjean N. Bertagnolli E. Strasser G. Pogany D. Zdroj.dok. . Vol. 55, (2008), p. 937-941 IEEE Transactions on Electron Devices Jazyk dok. eng - angličtina Krajina US - Spojené štáty Druh dok. rozpis článkov z periodík (rbx) Ohlasy Iliopoulos E., Adikimenakis, A., Giessen, C., Heuken, M., Georgakilas, A.: International Workshop on Nitride Semiconductors. Book of Abstracts. Montreux 2008. P. 394. DABIRAN, A.M. - WOWCHAK, A.M. - OSINSKY, A. - XIE, J. - HERTOG, B. - CUI, B. - LOOK, D.C. - CHOW, P.P. In APPLIED PHYSICS LETTERS. AUG 25 2008, vol. 93, no. 8. WU, T.Y. - LIN, S.K. - SZE, P.W. - HUANG, J.J. - CHIEN, W.C. - HU, C.C. - TSAI, M.J. - WANG, Y.H. In IEEE TRANSACTIONS ON ELECTRON DEVICES. 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článok
rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2008 2007 2.165 Q1 1.898 Q1
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