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Ultrathin InAlN/AlN barrier HEMT with high performance in normally off operation
Názov Ultrathin InAlN/AlN barrier HEMT with high performance in normally off operation Autor Ostermaier C. Spoluautori Pozzovivo G. Carlin J.-F. Basnar B. Schrenk W. Douvry Y. Gaquiere C. Čičo Karol SAVELEK - Elektrotechnický ústav SAV Fröhlich Karol 1954 SAVELEK - Elektrotechnický ústav SAV ORCID Gonschorek M. Grandjean N. Strasser G. Pogany D. Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ORCID Zdroj.dok. . Vol. 30 (2009), p. 1030-1032 IEEE Electron Devices Letters Jazyk dok. eng - angličtina Krajina US - Spojené štáty Druh dok. rozpis článkov z periodík (rbx) Ohlasy LIM, T. - AIDAM, R. - WALTEREIT, P. - HENKEL, T. - QUAY, R. - LOZAR, R. - MAIER, T. - KIRSTE, L. - AMBACHER, O. In IEEE ELECTRON DEVICE LETTERS. JUL 2010, vol. 31, no. 7, p. 671-673. TASLI, P. - SARIKAVAK, B. - ATMACA, G. - ELIBOL, K. - KULOGLU, A.F. - LISESIVDIN, S.B. In PHYSICA B-CONDENSED MATTER. SEP 15 2010, vol. 405, no. 18, p. 4020-4026. Wang, H. , Chung, J.W., Gao, X., Guo, S., Palacios, T. 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Impact of donor-layer doping & thickness, gate-length and temperature on potential and electron concentration in AlGaN/GaN Double-Heterostructure and Single-Heterostructure HEMT. In 2018 5TH IEEE UTTAR PRADESH SECTION INTERNATIONAL CONFERENCE ON ELECTRICAL, ELECTRONICS AND COMPUTER ENGINEERING (UPCON). 2018, p. 809-813. DONG, Y. - SON, D.H. - DAI, Q. - LEE, J.H. - WON, C.H. - KIM, J.G. - CHEN, D.J. - LEE, J.H. - LU, H. - ZHANG, R. - ZHENG, Y.D. High Sensitive pH Sensor Based on AlInN/GaN Heterostructure Transistor. In SENSORS. MAY 2018, vol. 18, no. 5. DONG, Y. - CHEN, D.J. - LU, H. - ZHANG, R. - ZHENG, Y.D. Effective suppression of the high temperature DC performance degradation of AlInN/GaN HEMTs by back barrier. In INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS. SEP-OCT 2018, vol. 31, no. 5. MA, J. - ERINE, C. - XIANG, P. - CHENG, K. - MATIOLI, E. Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistance. In APPLIED PHYSICS LETTERS. DEC 10 2018, vol. 113, no. 24. NARIN, P. - ARSLAN, E. - OZTURK, M. - OZTURK, M. - LISESIVDIN, S.B. - OZBAY, E. Scattering analysis of ultrathin barrier (< 7nm) GaN-based heterostructures. In APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING. ISSN 0947-8396, APR 2019, vol. 125, no. 4. GULSEREN, M.E. - BOZOK, B. - KURT, G. - KAYAL, O.A. - OZTURK, M. - URAL, S. - BUTUN, B. - OZBAY, E. Normally-off p-GaN gate InAlN/GaN HEMTs grown on silicon substrates. In GALLIUM NITRIDE MATERIALS AND DEVICES XIV. ISSN 0277-786X, 2019, vol. 10918. DONG, Y. - XIE, Z.L. - CHEN, D.J. - LU, H. - ZHANG, R. - ZHENG, Y.D. Effects of dissipative substrate on the performances of enhancement mode AlInN/GaN HEMTs. In INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS. ISSN 0894-3370, JAN-FEB 2019, vol. 32, no. 1. KOTANI, J. - YAITA, J. - YAMADA, A. - NAKAMURA, N. - WATANABE, K. Impact of n-GaN cap layer doping on the gate leakage behavior in AlGaN/GaN HEMTs grown on Si and GaN substrates. In JOURNAL OF APPLIED PHYSICS. ISSN 0021-8979, JUN 21 2020, vol. 127, no. 23. TOPRAK, A. - YILMAZ, D. - OZBAY, E. Selectively dry etched of p-GaN/InAlN heterostructures using BCI3-based plasma for normally-off HEMT technology. In MATERIALS RESEARCH EXPRESS. DEC 2021, vol. 8, no. 12. HSU, L.H. - LAI, Y.Y. - TU, P.T. - LANGPOKLAKPAM, C. - CHANG, Y.T. - HUANG, Y.W. - LEE, W.C. - TZOU, A.J. - CHENG, Y.J. - LIN, C.H. - KUO, H.C. - CHANG, E.Y. Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration. In MICROMACHINES. OCT 2021, vol. 12, no. 10. MAZUMDER, S. - WU, Z.G. - PAN, P.C. - LI, S.H. - WANG, Y.H. DC performance improvement of nanochannel AlGaN/AlN/GaN HEMTs with reduced OFF-state leakage current by post-gate annealing modulation. In SEMICONDUCTOR SCIENCE AND TECHNOLOGY. ISSN 0268-1242, SEP 2021, vol. 36, no. 9. FUKUDA, K. - HATTORI, J. - ASAI, H. - YAITA, J. - KOTANI, J. A Poisson-Schrodinger and cellular automaton coupled approach for two-dimensional electron gas transport modeling of GaN-based high mobility electron transistors. In JAPANESE JOURNAL OF APPLIED PHYSICS. ISSN 0021-4922, MAY 1 2021, vol. 60, no. SB. ODA, O. - HORI, M. Novel Epitaxy for Nitride Semiconductors Using Plasma Technology. In PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. ISSN 1862-6300, JAN 2021, vol. 218, no. 1, SI. BERA, Subhash Chandra. GaN Semiconductor. In Lecture Notes in Electrical Engineering, 2022-01-01, 955, pp. 15-21. ISSN 18761100. Dostupné na: https://doi.org/10.1007/978-981-19-6266-0_2. NARIN, P. - KUTLU-NARIN, E. - ATMACA, G. - SARIKAVAK-LISESIVDIN, B. - LISESIVDIN, S.B. - OZBAY, E. A structural analysis of ultrathin barrier (In)AlN/GaN heterostructures for GaN-based high-frequency power electronics. In SURFACE AND INTERFACE ANALYSIS. ISSN 0142-2421, MAY 2022, vol. 54, no. 5, p. 576-583. Dostupné na: https://doi.org/10.1002/sia.7067. CHAND, N. - ADAK, S. - SWAIN, S.K. - BISWAL, S.M. - SARKAR, A. Performance enhancement of normally off InAlN/AlN/GaN HEMT using aluminium gallium nitride back barrier. In COMPUTERS & ELECTRICAL ENGINEERING. ISSN 0045-7906, MAR 2022, vol. 98. Dostupné na: https://doi.org/10.1016/j.compeleceng.2022.107695. Kategória ADCA - Vedecké práce v zahraničných karentovaných časopisoch impaktovaných Kategória (od 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Typ výstupu článok Rok vykazovania 2009 
článok
rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2009 2008 3.049 Q1 2.379 Q1
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