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Low resistance ohmic contacts annealed at 600 °C on a InAlN/GaN heterostructure with SiCl4-reactive ion etching surface treatment
Názov Low resistance ohmic contacts annealed at 600 °C on a InAlN/GaN heterostructure with SiCl4-reactive ion etching surface treatment Autor Pozzovivo G. Spoluautori Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ORCID Giesen C. Heuken M. Liday J. Strasser G. Pogany D. Zdroj.dok. Physica Status Solidi (C) : current topics in solid state physics. Vol. 6, (2009), p. S999-S1002 Jazyk dok. eng - angličtina Krajina DE - Nemecko Druh dok. rozpis článkov z periodík (rbx) Ohlasy KIM, S. - KIM, H.J. - CHOI, S. - LOCHNER, Z. - RYOU, J.H. - DUPUIS, R.D. - AHN, K.S. - KIM, H. In JAPANESE JOURNAL OF APPLIED PHYSICS. OCT 2013, vol. 52, no. 10, 2, SI. KIM, S. - RYOU, J.H. - DUPUIS, R.D. - KIM, H. In APPLIED PHYSICS LETTERS. FEB 4 2013, vol. 102, no. 5. GEUM, D.M. - SHIN, S. - PARK, M.S. - JANG, J.H. In ELECTRONICS LETTERS. OCT 9 2014, vol. 50, no. 21, p. 1545-1546. LIU, Y. - SINGH, S.P. - NGOO, Y.J. - KYAW, L.M. - BERA, M.K. - LO, Q.Q. - CHOR, E.F. In JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. MAY 2014, vol. 32, no. 3. WATANABE, A. - FREEDSMAN, J.J. - URAYAMA, Y. - CHRISTY, D. - EGAWA, T. In JOURNAL OF APPLIED PHYSICS. DEC 21 2015, vol. 118, no. 23. ARULKUMARAN, S. - NG, G.I. - RANJAN, K. - KUMAR, C.M.M. - FOO, S.C. - ANG, K.S. - VICKNESH, S. - BIN DOLMANAN, S. - BHAT, T. - TRIPATHY, S. In JAPANESE JOURNAL OF APPLIED PHYSICS. APR 2015, vol. 54, no. 4, SI. ARULKUMARAN, S. - NG, G.I. In GALLIUM NITRIDE (GAN): PHYSICS, DEVICES, AND TECHNOLOGY. 2016, vol. 47, p. 63-107. CHOU, L.I. - PENG, L.Y. - WANG, H.C. - CHIU, H.C. - WANG, H.T. - CHIANG, D.L. - CHYI, J.I. In 2017 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS). 2017. BOURLIER, Y. - BOUTTEMY, M. - PATARD, O. - GAMARRA, P. - PIOTROWICZ, S. - VIGNERON, J. - AUBRY, R. - DELAGE, S. - ETCHEBERRY, A. Investigation of InAlN Layers Surface Reactivity after Thermal Annealings: A Complete XPS Study for HEMT. In ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. 2018, vol. 7, no. 6, p. P329-P338. YOSHIDA, T. - EGAWA, T. Dynamic variation of carrier transport properties of recessed Au-free ohmic contacts to InAlN/AlN/GaN on Si-wafer. In JAPANESE JOURNAL OF APPLIED PHYSICS. NOV 2018, vol. 57, no. 11. ZENG, F.M. - AN, J.X. - ZHOU, G.N. - LI, W.M. - WANG, H. - DUAN, T.L. - JIANG, L.L. - YU, H.Y. A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability. In ELECTRONICS. DEC 2018, vol. 7, no. 12. WANG, X.W. - HUANG, H.C. - GREEN, B. - GAO, X. - ROSENMANN, D. - LI, X.L. - SHI, J.X. Au-free low-temperature ohmic contacts for AlGaN/AlN/GaN heterostructures. In JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. ISSN 2166-2746, NOV 2020, vol. 38, no. 6. Kategória ADEB - Vedecké práce v ostatných zahraničných časopisoch neimpaktovaných Kategória (od 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Typ výstupu článok Rok vykazovania 2009 
článok
rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore N rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2009 2008 0.398 Q3
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