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Off-state breakdown in InAlN/GaN HEMTs
Názov Off-state breakdown in InAlN/GaN HEMTs Autor Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ORCID Spoluautori Pozzovivo G. Carlin J.-F. Gonschorek M. Feltin E. Grandjean N. Strasser G. Pogany D. Gornik E. Zdroj.dok. Physica Status Solidi (C) : current topics in solid state physics. Vol. 6, (2009), p. S925-S928 Jazyk dok. eng - angličtina Krajina DE - Nemecko Druh dok. rozpis článkov z periodík (rbx) Ohlasy LEE, H.S. - PIEDRA, D. - SUN, M. - GAO, X. - GUO, S.P. - PALACIOS, T. In IEEE ELECTRON DEVICE LETTERS. JUL 2012, vol. 33, no. 7, p. 982-984. ZHOU, Q. - CHEN, H.W. - ZHOU, C.H. - FENG, Z.H. - CAI, S.J. - CHEN, K.J. In IEEE ELECTRON DEVICE LETTERS. JAN 2012, vol. 33, no. 1, p. 38-40. OHI, K. - ASUBAR, J.T. - NISHIGUCHI, K. - HASHIZUME, T. In IEEE TRANSACTIONS ON ELECTRON DEVICES. OCT 2013, vol. 60, no. 10, SI, p. 2997-3004. ZHOU, Q. - CHEN, W.J. - LIU, S.H. - ZHANG, B. - FENG, Z.H. - CAI, S.J. - CHEN, K.J. In IEEE TRANSACTIONS ON ELECTRON DEVICES. MAR 2013, vol. 60, no. 3, p. 1075-1081. ZHOU, Q. - CHEN, W.J. - LIU, S.H. - ZHANG, B. - FENG, Z.H. - CAI, S.J. - CHEN, K.J. In 2013 25TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD). 2013, p. 195-198. ZHOU, Q. - CHEN, W.J. - LIU, S.H. - ZHANG, B. - FENG, Z.H. - CAI, S.J. - CHEN, K.J. In GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 3. 2013, vol. 58, no. 4, p. 351-363. SAITO, H. - TAKADA, Y. - KURAGUCHI, M. - YUMOTO, M. - TSUDA, K. In PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 5. 2013, vol. 10, no. 5, p. 824-826. TANG, C. - SHI, J. In SEMICONDUCTOR SCIENCE AND TECHNOLOGY. DEC 2014, vol. 29, no. 12. MENEGHESSO, G. - MENEGHINI, M. - ZANONI, E. In JAPANESE JOURNAL OF APPLIED PHYSICS. OCT 2014, vol. 53, no. 10. WATANABE, A. - FREEDSMAN, J. J. - ODA, R. - ITO, T. - EGAWA, T. In APPLIED PHYSICS EXPRESS. APR 2014, vol. 7, no. 4. ZHOU, Q. - YANG, S. - CHEN, W. - ZHANG, B. - FENG, Z. - CAI, S. - CHEN, K. J. In SOLID-STATE ELECTRONICS. JAN 2014, vol. 91, p. 19-23. LEE, K.B. - GUINEY, I. - JIANG, S. - ZAIDI, Z.H. - QIAN, H.T. - WALLIS, D.J. - UREN, M.J. - KUBALL, M. - HUMPHREYS, C.J. - HOUSTON, P.A. In APPLIED PHYSICS EXPRESS. MAR 2015, vol. 8, no. 3. MIYOSHI, M. - FUJITA, S. - EGAWA, T. In APPLIED PHYSICS EXPRESS. FEB 2015, vol. 8, no. 2. FREEDSMAN, J.J. - HAMADA, T. - MIYOSHI, M. - EGAWA, T. In IEEE ELECTRON DEVICE LETTERS. APR 2017, vol. 38, no. 4, p. 497-500. BISWAS, Debaleen - FUJITA, Hirotaka - TORII, Naoki - EGAWA, Takashi. Effect of In composition on electrical performance of AlInGaN/GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) on Si. In JOURNAL OF APPLIED PHYSICS. ISSN 0021-8979, 2019, vol. 125, no. 22, pp. Kategória ADEB - Vedecké práce v ostatných zahraničných časopisoch neimpaktovaných Kategória (od 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Typ výstupu článok Rok vykazovania 2009 
článok
rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore N rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2009 2008 0.398 Q3
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