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Impact of SF6 plasma treatment on performance of AlGaN/GaN HEMT
Názov Impact of SF6 plasma treatment on performance of AlGaN/GaN HEMT Autor Vanko Gabriel 1981 SAVELEK - Elektrotechnický ústav SAV ORCID Spoluautori Lalinský Tibor 1951 SAVELEK - Elektrotechnický ústav SAV Haščík Štefan 1956 SAVELEK - Elektrotechnický ústav SAV Rýger Ivan 1987 Mozolová Želmíra SAVELEK - Elektrotechnický ústav SAV Škriniarová Jaroslava Tomáška M. Vincze A. Spoluautori Kostič Ivan SAVINFO - Ústav informatiky SAV Zdroj.dok. Vacuum. Vol. 84 (2009), p. 235-237 Jazyk dok. eng - angličtina Druh dok. rozpis článkov z periodík (rbx) Ohlasy WANG, Yanzhen - CHEN, Yen-Ting - ZHAO, Han - XUE, Fei - ZHOU, Fei - LEE, Jack C. Impact of SF6 plasma treatment on performance of TaN-HfO2-InP metal-oxide-semiconductor field-effect transistor. In APPLIED PHYSICS LETTERS. ISSN 0003-6951, 2011, vol. 98, no. 4, pp. DU, Y. - HAN, W. - YAN, W. - ZHANG, Y. - XIONG, Y. - ZHANG, R. - YANG, F. Research progress of enhancement - mode AlGaN/GaN HEMTs. In Semicconductor Technology. 2011, vol. 36, no. 10, pp. 771 -777. WANG, Yanzhen - CHEN, Yen-Ting - XUE, Fei - ZHOU, Fei - LEE, Jack C. Effects of SF6 plasma treatment on electrical characteristics of TaN-Al2O3-InP metal-oxide-semiconductor field-effect transistor. In APPLIED PHYSICS LETTERS. ISSN 0003-6951, 2012, vol. 101, no. 6, pp. HIROSE, Mayumi - TAKADA, Yoshiharu - MATSUSHITA, Keiichi - TAKAGI, Kazutaka - TSUDA, Kunio. 31 GHz power characteristics of GaN HEMTs with slightly etched AlGaN layer at ohmic contact. In PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 2. ISSN 1862-6351, 2012, vol. 9, no. 2, pp. JAKOVENKO, J. Thermo-mechanical design of electronic systems. Habilitation Thesis, Czech Technical Universsity in Prague. 2012, 138 p. ZHANG, H. Y. - YANG, X. M. - YU, T. - JIN, C. G. - YE, C. - ZHUGE, L. J. - WU, X. M. Role of high-frequency power in C4F8 dual-frequency capacitively coupled plasmas treating high-k HfO2 films. In JOURNAL OF PHYSICS D-APPLIED PHYSICS. ISSN 0022-3727, 2013, vol. 46, no. 43, pp. BISI, D. - MENEGHINI, M. - STOCCO, A. - CIBIN, G. - PANTELLINI, A. - NANNI, A. - LANZIERI, C. - ZANONI, E. - MENEGHESSO, G. Influence of Fluorine-based Dry Etching on Electrical Parameters of AlGaN/GaN-on-Si High Electron Mobility Transistors. In 2013 PROCEEDINGS OF THE EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC). ISSN 1930-8876, 2013, vol., no., pp. 61-64. LIU, X. Fabrication and characterization of advanced ALGaN/GaN high-electron-mobility transistors. PhD Thesis, National University of Singapore. 2013, 179 p. DU YAN-DONG - HAN WEI-HUA - YAN WEI - YANG FU-HUA. Impact of CHF3 Plasma Treatment on AlGaN/GaN HEMTs Identified by Low-Temperature Measurement. In CHINESE PHYSICS LETTERS. ISSN 0256-307X, 2014, vol. 31, no. 4, pp. LEE, Neung-Hee - LEE, Minseong - CHOI, Woojin - KIM, Donghwan - JEON, Namcheol - CHOI, Seonhong - SEO, Kwang-Seok. Effects of various surface treatments on gate leakage, subthreshold slope, and current collapse in AlGaN/GaN high-electron-mobility transistors. In JAPANESE JOURNAL OF APPLIED PHYSICS. ISSN 0021-4922, 2014, vol. 53, no. 4, pp. JO, Y.W. - SON, D.H. - KANG, H.S. - KIM, D.K. - WON, C.H. - LEE, J.H. Suppression of current collapse in AlGaN/GaN HEMT with BCl3/Ar surface treatment and SiO2/Al2O3 double dielectric passivation. In Journal of Photonic Science and Technology. 2014, vol. 4, no. 1, pp. 18-21. TZOU, An-Jye - HSIEH, Dan-Hua - CHEN, Szu-Hung - LI, Zhen-Yu - CHANG, Chun-Yen - KUO, Hao-Chung. Non-thermal alloyed ohmic contact process of GaN-based HEMTs by pulsed laser annealing. In SEMICONDUCTOR SCIENCE AND TECHNOLOGY. ISSN 0268-1242, 2016, vol. 31, no. 5, pp. ANDRIANOV, N.A - BLINOV, N.E. - GAVRILOV, A.S. - SMIRNOV, A.S. - SOMOV, P.A. - MUSIKHIN, S.F. - KOKIN, S.V. - KRASOVITSKYI, D.M. Study of SF6 plasma treatment of GaN-НЕМТ structures. In Uspechi prikladnoj fiziki. 2017, vol. 5, no. 4, pp. 335-340. ISSN 2307-4469 MAO, Ling-Feng. Electrochemical Modeling of the Effects of F Ions in the AlGaN Layer on the Two-Dimensional Electron Density in AlGaN/GaN HEMTs. In ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. ISSN 2162-8769, 2019, vol. 8, no. 9, pp. P472-P479. HAN, Jun - ZHAO, Jia Hao - ZHAO, Jie - XING, Yan Hui - CAO, Xu - FU, Kai - SONG, Liang - DENG, Xu Guang - ZHANG, Bao Shun. Impact of Interface Treatment on Dynamic Characteristic of AlGaN/GaN MIS-HEMTs. In Faguang Xuebao/Chinese Journal of Luminescence. ISSN 10007032, 2019-07-01, 40, 7, pp. 915-921. CHEN, Ding-Yuan - PERSSON, Axel R. - WEN, Kai-Hsin - SOMMER, Daniel - GRUNENPUTT, Jan - BLANCK, Herve - THORSELL, Mattias - KORDINA, Olof - DARAKCHIEVA, Vanya - PERSSON, Per O. A. - CHEN, Jr-Tai - RORSMAN, Niklas. Impact of in situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance. In SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2022, vol. 37, no. 3, pp. ISSN 0268-1242. Dostupné na: https://doi.org/10.1088/1361-6641/ac4b17. CHO, H.K. - RASS, J. - MOGILATENKO, A. - KUNKEL, K. - UNGER, R.S. - SCHILLING, M. - WERNICKE, T. - EINFELDT, S. Impact of Plasma Treatment of n-Alsub0.87/subGasub0.13/subN:Si Surfaces on V/Al/Ni/Au Contacts in Far-UVC LEDs. In IEEE PHOTONICS TECHNOLOGY LETTERS. ISSN 1041-1135, SEPT 1 2023, vol. 35, no. 17, p. 915-918. Dostupné na: https://doi.org/10.1109/LPT.2023.3288216. Kategória ADCA - Vedecké práce v zahraničných karentovaných časopisoch impaktovaných Kategória (od 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Typ výstupu článok Rok vykazovania 2009 Registrované v WOS Registrované v SCOPUS DOI 10.1016/j.vacuum.2009.04.032 
článok
rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2009 2008 1.114 Q3 0.566 Q2
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