Počet záznamov: 1
Analysis of degradation mechanisms in lattice-matched InAlN/GaN high-electron-mobility transistors
Názov Analysis of degradation mechanisms in lattice-matched InAlN/GaN high-electron-mobility transistors Autor Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ORCID Spoluautori Pozzovivo G. Ostermaier C. Strasser G. Pogany D. Gornik E. Carlin J.-F. Gonschorek M. Feltin E. Grandjean N. Zdroj.dok. Journal of Applied Physics. Vol. 106, (2009), 124503 Jazyk dok. eng - angličtina Krajina US - Spojené štáty Druh dok. rozpis článkov z periodík (rbx) Ohlasy TAPAJNA, M. - MISHRA, U.K. - KUBALL, M. In APPLIED PHYSICS LETTERS. JUL 12 2010, vol. 97, no. 2. CHANG, C.Y. - ANDERSON, T. - HITE, J. - LU, L. - LO, C.F. - CHU, B.H. - CHENEY, D.J. - DOUGLAS, E.A. - GILA, B.P. - REN, F. - VIA, G.D. - WHITING, P. - HOLZWORTH, R. - JONES, K.S. - JANG, S. - PEARTON, S.J. In JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. SEP-OCT 2010, vol. 28, no. 5, p. 1044-1047. Wang, H. , Chung, J.W., Gao, X., Guo, S., Palacios, T. 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Dostupné na: https://doi.org/10.1109/TED.2022.3209636. CHAND, N. - ADAK, S. - SWAIN, S.K. - BISWAL, S.M. - SARKAR, A. Performance enhancement of normally off InAlN/AlN/GaN HEMT using aluminium gallium nitride back barrier. In COMPUTERS & ELECTRICAL ENGINEERING. ISSN 0045-7906, MAR 2022, vol. 98. Dostupné na: https://doi.org/10.1016/j.compeleceng.2022.107695. ZHANG, C. - YAO, R.H. An enhancement-mode AlInN/GaN HEMTs combining intrinsic GaN cap layer and AlGaN back barrier layer. In SOLID STATE COMMUNICATIONS. ISSN 0038-1098, JUN 1 2023, vol. 366. Dostupné na: https://doi.org/10.1016/j.ssc.2023.115150. Kategória ADCA - Vedecké práce v zahraničných karentovaných časopisoch impaktovaných Kategória (od 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Typ výstupu článok Rok vykazovania 2009 
článok
rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2009 2008 2.201 Q1 1.644 Q1
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