Počet záznamov: 1  

Proposal and performance analysis of normally-off n++ GaN/InAlN/AlN/GaN HEMTs with 1 nm thick InAlN barrier

  1. NázovProposal and performance analysis of normally-off n++ GaN/InAlN/AlN/GaN HEMTs with 1 nm thick InAlN barrier
    Autor Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV    ORCID
    Spoluautori Ostermaier C.

    Pozzovivo G.

    Basnar B.

    Schrenk W.

    Carlin J.-F.

    Gonschorek M.

    Feltin E.

    Grandjean N.

    Douvry Y.

    Gaquiere C.

    De Jaeger J.-C.

    Čičo Karol SAVELEK - Elektrotechnický ústav SAV

    Fröhlich Karol 1954 SAVELEK - Elektrotechnický ústav SAV    ORCID

    Škriniarová Jaroslava

    Kováč Ján

    Strasser G.

    Pogany D.

    Gornik E.

    Zdroj.dok. . Vol. 57 (2010), p. 2144-2154 IEEE Transactions on Electron Devices
    Jazyk dok.eng - angličtina
    Druh dok.rozpis článkov z periodík (rbx)
    OhlasyMarek, J., Šatka, A., Donoval, D., Molnár, M., Chvála, A., Pribytný, P., Daříček, M.: In: Proc. ADEPT. 3st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2015. ISBN 978-80-554-1033-3. P. 45
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    ADAK, S. - SWAIN, S.K. - RAJ, G. - RAHAMAN, H. - SARKAR, C.K. In PROCEEDINGS OF THE 3RD INTERNATIONAL CONFERENCE ON DEVICES, CIRCUITS AND SYSTEMS (ICDCS) 2016. 2016, p. 89-92.
    AHMEDA, K. - UBOCHI, B. - BENBAKHTI, B. - DUFFY, S.J. - SOLTANI, A. - ZHANG, W.D. - KALNA, K. In IEEE ACCESS. 2017, vol. 5, p. 20946-20952.
    AHMEDA, K. - UBOCHI, B. - KALNA, K. - BENBAKHTI, B. - DUFFY, S.J. - ZHANG, W. - SOLTANI, A. In 2017 12TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC). 2017, p. 37-40.
    MURUGAPANDIYAN, P. - RAVIMARAN, S. - WILLIAM, J. - AJAYAN, J. - NIRMAL, D. In SUPERLATTICES AND MICROSTRUCTURES. SEP 2017, vol. 109, p. 725-734.
    MURUGAPANDIYAN, P. - RAVIMARAN, S. - WILLIAM, J. 30 nm T-gate enhancement-mode InAlN/AlN/GaN HEMT on SiC substrates for future high power RF applications. In JOURNAL OF SEMICONDUCTORS. AUG 2017, vol. 38, no. 8.
    NASSER, Caram - RITTER, Dan - RUDOLPH, Matthias. Bias dependence of the access resistance in GaN HEMTs. In MIKON 2018 22nd International Microwave and Radar Conference, 2018-07-05, pp. 271-273.
    ADAK, Sarosij - SARKAR, Arghyadeep - SWAIN, Sanjit Kumar. Nanotechnology applications in electron devices. In Nanotechnology: Synthesis to Applications, 2017-01-01, pp. 285-295.
    Murugapandiyan, P., Rajya Lakshmi, V., Wasim, M., Meenakshi Sundaram, K.: Investigation of ultra-scaled AlN/GaN/InGaN double heterojunction HEMT for high-frequency applications In 2020 International Journal of Electronics Letters 8(4), pp. 472-482
    HUONG, N.T. - COMYN, R. - CHENOT, S. - BRAULT, J. - DAMILANO, B. - VEZIAN, S. - FRAYSSINET, E. - COZETTE, F. - RODRIGUEZ, C. - DEFRANCE, N. - LECOURT, F. - LABAT, N. - MAHER, H. - CORDIER, Y. Selective GaN sublimation and local area regrowth for co-integration of enhancement mode and depletion mode Al(Ga)N/GaN high electron mobility transistors. In SEMICONDUCTOR SCIENCE AND TECHNOLOGY. ISSN 0268-1242, FEB 2020, vol. 36, no. 2.
    PAUL, S. - MONDAL, S. - SARKAR, A. Characterization and analysis of low-noise GaN-HEMT based inverter circuits. In MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS. ISSN 0946-7076, NOV 2021, vol. 27, no. 11, SI, p. 3957-3965.
    COZETTE, F. - HASSAN, B. - RODRIGUEZ, C. - FRAYSSINET, E. - COMYN, R. - LECOURT, F. - DEFRANCE, N. - LABAT, N. - BOONE, F. - SOLTANI, A. - JAOUAD, A. - CORDIER, Y. - MAHER, H. New barrier layer design for the fabrication of gallium nitride-metal-insulator-semiconductor-high electron mobility transistor normally-off transistor. In SEMICONDUCTOR SCIENCE AND TECHNOLOGY. ISSN 0268-1242, MAR 2021, vol. 36, no. 3.
    NGO, T.H. - COMYN, R. - CHENOT, S. - BRAULT, J. - NEMOZ, M. - VENNEGUES, P. - DAMILANO, B. - VEZIAN, S. - FRAYSSINET, E. - COZETTE, F. - DEFRANCE, N. - LECOURT, F. - LABAT, N. - MAHER, H. - CORDIER, Y. Selective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors. In JOURNAL OF CRYSTAL GROWTH. ISSN 0022-0248, SEP 1 2022, vol. 593. Dostupné na: https://doi.org/10.1016/j.jcrysgro.2022.126779.
    YANG, L.Y. - HUANG, W. - WANG, D. - ZHANG, B.Q. - ZHANG, Y.B. - ZHANG, J.Y. - CHEN, T.S. - GE, W.K. - WU, S.B. - SHEN, B. - WANG, X.Q. AlN/GaN HEMTs with if/isubmax/sub Exceeding 300 GHz by Using Ge-Doped in/iSUP++/SUP GaN Ohmic Contacts. In ACS APPLIED ELECTRONIC MATERIALS. SEP 11 2023, vol. 5, no. 9, p. 4786-4791. Dostupné na: https://doi.org/10.1021/acsaelm.3c00555.
    KategóriaADCA - Vedecké práce v zahraničných karentovaných časopisoch impaktovaných
    Kategória (od 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Typ výstupučlánok
    Rok vykazovania2010
    Registrované vWOS
    Registrované vSCOPUS
    Registrované vCCC
    DOI 10.1109/TED.2010.2055292
    článok

    článok

    rokCCIFIF Q (best)JCR Av Jour IF PercSJRSJR Q (best)CiteScore
    A
    rok vydaniarok metrikyIFIF Q (best)SJRSJR Q (best)
    201020092.4451.768Q1
Počet záznamov: 1  

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