Počet záznamov: 1
AlGaN/GaN based SAW-HEMT structures for chemical gas sensors
Názov AlGaN/GaN based SAW-HEMT structures for chemical gas sensors Autor Lalinský Tibor 1951 SAVELEK - Elektrotechnický ústav SAV Spoluautori Rýger Ivan 1987 SAVELEK - Elektrotechnický ústav SAV Vanko Gabriel 1981 SAVELEK - Elektrotechnický ústav SAV ORCID Tomáška M. Kostič Ivan 1955- SAVINFO - Ústav informatiky SAV SCOPUS RID ORCID Haščík Štefan 1956 SAVELEK - Elektrotechnický ústav SAV Vallo Martin SAVELEK - Elektrotechnický ústav SAV Zdroj.dok. Procedia Engineering : Proc. Eurosensors XXIV. Vol. 5 (2010), no. 152-155 Jazyk dok. eng - angličtina Druh dok. rozpis článkov z periodík (rbx) Ohlasy CALIENDO, Cinzia - LO CASTRO, Fabio. Advanced bulk and thin film materials for harsh environment MEMS applications. In Anti-Abrasive Nanocoatings: Current and Future Applications, 2014-12-18, pp. 430-453. GUO, Yahui - WANG, Xiongtao - MIAO, Bin - LI, Ying - YAO, Weirong - XIE, Yunfei - LI, Jiadong - WU, Dongmin - PEI, Renjun. An AuNPs-functionalized AlGaN/GaN high electron mobility transistor sensor for ultrasensitive detection of TNT. In RSC ADVANCES. ISSN 2046-2069, 2015, vol. 5, no. 120, pp. 98724-98729. AMOUDACHE, Samira - MOISEYENKO, Rayisa - PENNEC, Yan - ROUHANI, Bahram Djafari - KHATER, Antoine - LUCKLUM, Ralf - TIGRINE, Rachid. Optical and acoustic sensing using Fano-like resonances in dual phononic and photonic crystal plate. In JOURNAL OF APPLIED PHYSICS. ISSN 0021-8979, 2016, vol. 119, no. 11, pp. SHARMA, N. - PERIASAMY, C. - CHATURVEDI, N. Investigation of High-Temperature Effects on the Performance of AlGaN/GaN High Electron Mobility Transistors. In JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS. ISSN 1555-130X, 2016, vol. 11, no. 6, pp. 694-701. CIMALLA, V. Label-free biosensors based on III-nitride semiconductors. In Springer Series on Chemical Sensors and Biosensors. 2017, pp. 1-44. PENNEC, Yan - JIN, Yabin - DJAFARI-ROUHANI, Bahram. Phononic and photonic crystals for sensing applications. In ADVANCES IN CRYSTALS AND ELASTIC METAMATERIALS, PT 2. ISSN 0065-2156, 2019, vol. 52, no., pp. 105-145. BHATTACHARJEE, K. Guided wave devices with sensors utilizing embedded electrodes. May, 2019, United States Patent No. 10305442 B2. BHATTACHARJEE, K. Mixed domain guided wave devices utilizing embedded electrodes. May, 2019, United States Patent No. 10305443 B2. BHATTACHARJEE, K. Guided wave devices with embedded electrodes and non-embedded electrodes. February, 2019, United States Patent No. 10211806 B2. BHATTACHARJEE, K. Guided wave devices with selectively loaded piezoelectric layers. June, 2019, United States Patent No. 10326426 B2. SHARMA, Niketa - CHATURVEDI, Nidhi - MISHRA, Shivanshu - SINGH, Kuldip - CHATURVEDI, Nitin - CHAUHAN, Ashok - PERIASAMY, C. - KHARBANDA, Dheeraj Kumar - PARJAPAT, Priyavart - KHANNA, P. K. High-Resolution AlGaN/GaN HEMT-Based Electrochemical Sensor for Biomedical Applications. In IEEE TRANSACTIONS ON ELECTRON DEVICES. ISSN 0018-9383, 2020, vol. 67, no. 1, pp. 289-295. KUMAR, Naveen - RAMAN, Ashish. Prospective Sensing Applications of Novel Heteromaterial Based Dopingless Nanowire-TFET at Low Operating Voltage. In IEEE TRANSACTIONS ON NANOTECHNOLOGY. ISSN 1536-125X, 2020, vol. 19, no., pp. 527-534. BHATTACHARJEE, K. Guided wave devices with selectively thinned piezoelectric layers. January, 2020, United States Patent No.10530329 B2. UPADHYAY, Kavita T. - CHATTOPADHYAY, Manju K. Sensor applications based on AlGaN/GaN heterostructures. In MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS. ISSN 0921-5107, 2021, vol. 263, no., pp. EISNER, Savannah R. - ALPERT, Hannah S. - CHAPIN, Caitlin A. - YALAMARTHY, Ananth Saran - SATTERTHWAITE, Peter F. - NASIRI, Ardalan - PORT, Sara - ANG, Simon - SENESKY, Debbie G. Extended Exposure of Gallium Nitride Heterostructure Devices to a Simulated Venus Environment. In 2021 IEEE AEROSPACE CONFERENCE (AEROCONF 2021). ISSN 1095-323X, 2021, vol., no., pp. Dostupné na: https://doi.org/10.1109/AERO50100.2021.9438131. PAL, Praveen - PRATAP, Yogesh - GUPTA, Mridula - KABRA, Sneha. Analytical Modeling and Simulation of AlGaN/GaN MOS-HEMT for High Sensitive pH Sensor. In IEEE SENSORS JOURNAL. ISSN 1530-437X, 2021, vol. 21, no. 12, pp. 12998-13005. Dostupné na: https://doi.org/10.1109/JSEN.2021.3069243. SHARMA, Niketa - GUPTA, Yogendra - SHARMA, Ashish - SHARMA, Harish. Thermal Modeling of the GaN HEMT Device Using Decision Tree Machine Learning Technique. In Lecture Notes in Networks and Systems. ISSN 23673370, 2021-01-01, 204, pp. 13-20. Dostupné na: https://doi.org/10.1007/978-981-16-1089-9_2. BHATTACHARJEE, K. - ZHGOON, S. Solidly mounted layer thin film device with grounding layer. March 3, 2021, United States Patent No. 10938367 B2. GUPTA, Yogendra - SHARMA, Niketa - SHARMA, Ashish - SHARMA, Harish. Machine learning algorithms for semiconductor device modeling. In VLSI and Hardware Implementations using Modern Machine Learning Methods, 2022-01-19, pp. 163-179. Dostupné na: https://doi.org/10.1201/9781003201038-9. SHARMA, N. - PANDEY, V. - GUPTA, A. - TAN, S.T. - TRIPATHY, S. - KUMAR, M. Recent progress on group III nitride nanostructure-based gas sensors. In JOURNAL OF MATERIALS CHEMISTRY C. ISSN 2050-7526, SEP 1 2022, vol. 10, no. 34, p. 12157-12190. Dostupné na: https://doi.org/10.1039/d2tc02103j. Kategória ADMB - Vedecké práce v zahraničných neimpaktovaných časopisoch registrovaných vo WOS Core Collection alebo SCOPUS Kategória (od 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Typ výstupu článok Rok vykazovania 2010 Registrované v WOS Registrované v SCOPUS DOI 10.1016/j.proeng.2010.09.402 
článok
rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore N rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2010
Počet záznamov: 1