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Electrical properties of InAlN/GaN high electron mobility transistor with Al2O3, ZrO2, and GdScO3 gate dielectrics
Názov Electrical properties of InAlN/GaN high electron mobility transistor with Al2O3, ZrO2, and GdScO3 gate dielectrics Autor Čičo Karol SAVELEK - Elektrotechnický ústav SAV Spoluautori Hušeková Kristína 1957 SAVELEK - Elektrotechnický ústav SAV Ťapajna Milan 1977 SAVELEK - Elektrotechnický ústav SAV ORCID Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV ORCID Stoklas Roman 1981 SAVELEK - Elektrotechnický ústav SAV ORCID Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ORCID Carlin J.-F. Grandjean N. Pogany D. Fröhlich Karol 1954 SAVELEK - Elektrotechnický ústav SAV ORCID Zdroj.dok. Journal of Vacuum Science and Technology B. Vol. 29 (2011), 01A808 Jazyk dok. eng - angličtina Druh dok. rozpis článkov z periodík (rbx) Ohlasy AKAZAWA, M. - NAKANO, T. In APPLIED PHYSICS LETTERS. SEP 17 2012, vol. 101, no. 12. ZHOU, Q. - CHEN, H.W. - ZHOU, C.H. - FENG, Z.H. - CAI, S.J. - CHEN, K.J. In JAPANESE JOURNAL OF APPLIED PHYSICS. APR 2012, vol. 51, no. 4, Part 2, SI. BERA, M.K. - LIU, Y. - KYAW, L.M. - NGOO, Y.J. - CHOR, E.F. In WIDE-BANDGAP SEMICONDUCTOR MATERIALS AND DEVICES 14. 2013, vol. 53, no. 2, p. 65-74. LIU, X. - YELURI, R. - KIM, J. - LAL, S. - RAMAN, A. - LUND, C. - WIENECKE, S. - LU, J. - LAURENT, M. - KELLER, S. - MISHRA, U.K. In APPLIED PHYSICS LETTERS. JUL 29 2013, vol. 103, no. 5. MAZUMDER, B. - LIU, X. - YELURI, R. - WU, F. - MISHRA, U. K. - SPECK, J. S. In JOURNAL OF APPLIED PHYSICS. OCT 7 2014, vol. 116, no. 13. SCHAEFER, A. - BESMEHN, A. - LUYSBERG, M. - WINDEN, A. - STOICA, T. - SCHNEE, M. - ZANDER, W. - NIU, G. - SCHROEDER, T. - MANTL, S. - HARDTDEGEN, H. - MIKULICS, M. - SCHUBERT, J. In SEMICONDUCTOR SCIENCE AND TECHNOLOGY. JUL 2014, vol. 29, no. 7. HU, Z. - YUE, Y. - ZHU, M. - SONG, B. - GANGULY, S. - BERGMAN, J. - JENA, D. - XING, H. G. In APPLIED PHYSICS EXPRESS. MAR 2014, vol. 7, no. 3. BERA, M. K. - LIU, Y. - KYAW, L. M. - NGOO, Y. J. - SINGH, S. P. - CHOR, E. F. In ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. 2014, vol. 3, no. 6, p. Q120-Q126. FEIJOO, P.C. - PAMPILLON, M.A. - ANDRES, E.S. - FIERRO, J.L.G. In THIN SOLID FILMS. OCT 30 2015, vol. 593, p. 62-66. FREEDSMAN, J.J. - WATANABE, A. - URAYAMA, Y. - EGAWA, T. In APPLIED PHYSICS LETTERS. SEP 7 2015, vol. 107, no. 10. Hardtdegen, A., La Torre, C., Zhang, H., Funck, C., Menzel, S., Waser, R., Hoffmann-Eifert, S.2016 IEEE 8th International Memory Workshop, IMW 2016 15 June 2016, Article number 7495280 DUTTA, G. - DASGUPTA, N. - DASGUPTA, A. In IEEE TRANSACTIONS ON ELECTRON DEVICES. DEC 2016, vol. 63, no. 12, p. 4693-4701. JENA, K. - SWAIN, R. - LENKA, T.R. In IET CIRCUITS DEVICES & SYSTEMS. SEP 2016, vol. 10, no. 5, p. 423-432. XU, Z.Y. - XU, F.J. - HUANG, C.C. - WANG, J.M. - ZHANG, X. - YANG, Z.J. - WANG, X.Q. - SHEN, B. In JOURNAL OF CRYSTAL GROWTH. AUG 1 2016, vol. 447, p. 1-4. DUTTA, G. - DASGUPTA, N. - DASGUPTA, A. In IEEE TRANSACTIONS ON ELECTRON DEVICES. APR 2016, vol. 63, no. 4, p. 1450-1458. AKAZAWA, M. - SEINO, A. In PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS. AUG 2017, vol. 254, no. 8. TROMM, T.C.U. - SCHAFER, A. - LUYSBERG, M. - WENDT, F. - BESMEHN, A. - MIKULICS, M. - HARDTDEGEN, H. - MANTL, S. - SCHUBERT, J. In DIELECTRICS FOR NANOSYSTEMS 7: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING. 2016, vol. 72, no. 2, p. 307-317. ARCE, M.A.P. Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets Introduction. In GROWTH OF HIGH PERMITTIVITY DIELECTRICS BY HIGH PRESSURE SPUTTERING FROM METALLIC TARGETS. 2017, p. 1-20. KANAGA, S. - KUSHWAH, B. - DUTTA, G. - DASGUPTA, N. - DASGUPTA, A. AlInN/GaN MIS-HEMTs with High Pressure Oxidized Aluminium as Gate Dielectric. In 2018 IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, COMPUTING AND COMMUNICATION TECHNOLOGIES (CONECCT). 2018. TERKHI, S. - BENTATA, S. - AZIZ, Z. - LANTRI, T. - ABBAR, B. First principle calculations of structural, electronic and magnetic properties of cubic GdCrO3 Perovskite. In INDIAN JOURNAL OF PHYSICS. JUL 2018, vol. 92, no. 7, p. 847-854. ADAK, Sarosij - SWAIN, Sanjit Kumar. Impact of High-K Dielectric Materials on Performance Analysis of Underlap In0.17Al0.83N/GaN DG-MOSHEMTs. In NANO. ISSN 1793-2920, 2019, vol. 14, no. 5, pp. AKAZAWA, Masamichi - KITAJIMA, Shouhei. Control of plasma-CVD SiO2/InAlN interface by ultrathin atomic-layer-deposited Al2O3 interlayer. In JAPANESE JOURNAL OF APPLIED PHYSICS. ISSN 0021-4922, 2019, vol. 58, no., pp. AKAZAWA, Masamichi - KITAJIMA, Shouhei - KITAWAKI, Yuya. Control of plasma-CVD SiO2/InAlN interface by N2O plasma oxidation. In JAPANESE JOURNAL OF APPLIED PHYSICS. ISSN 0021-4922, 2019, vol. 58, no. 10, pp. KANAGA, S. - DUTTA, G. - KUSHWAH, B. - DASGUPTA, N. - DASGUPTA, A. Low Temperature and High Pressure Oxidized Al2O3 as Gate Dielectric for AlInN/GaN MIS-HEMTs. In IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. ISSN 1530-4388, SEPT 2020, vol. 20, no. 3, p. 613-621. CUI, X. - CHENG, W.J. - HUA, Q.L. - LIANG, R.R. - HU, W.G. - WANG, Z.L. Enhanced performances of AlGaN/GaN HEMTs with dielectric engineering of HfZrOx. In NANO ENERGY. ISSN 2211-2855, FEB 2020, vol. 68. CUI, P. - ZHANG, J. - JIA, M. - LIN, G.Y. - WEI, L.C. - ZHAO, H.C. - GUNDLACH, L. - ZENG, Y.P. InAlN/GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer-deposited ZrO2 as gate dielectric. In JAPANESE JOURNAL OF APPLIED PHYSICS. ISSN 0021-4922, FEB 1 2020, vol. 59, no. 2. Kategória ADCA - Vedecké práce v zahraničných karentovaných časopisoch impaktovaných Kategória (od 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Typ výstupu článok Rok vykazovania 2011 Registrované v WOS Registrované v SCOPUS Registrované v CCC DOI 10.1116/1.3521506 
článok
rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2011 2010 1.271 Q2 0.900 Q1
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