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Proposal of high-electron mobility transistors with strained InN channel
Názov Proposal of high-electron mobility transistors with strained InN channel Autor Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ORCID Spoluautori Georgakilas A. Zdroj.dok. IEEE Transactions on Electron Devices. Vol. 58, (2011), p. 720 Jazyk dok. eng - angličtina Druh dok. rozpis článkov z periodík (rbx) Ohlasy LEE, C.T. - CHIOU, Y.L. - LEE, H.Y. - CHANG, K.J. - LIN, J.C. - CHUANG, H.W. In APPLIED SURFACE SCIENCE. SEP 1 2012, vol. 258, no. 22, p. 8590-8594. LENKA, T.R. - DASH, G.N. - PANDA, A.K. In INTERNATIONAL CONFERENCE ON SOLID STATE DEVICES AND MATERIALS SCIENCE. 2012, vol. 25, p. 36-43. IKEDA, K. - ISOBE, Y. - IKKI, H. - SAKAKIBARA, T. - IWAYA, M. - TAKEUCHI, T. - KAMIYAMA, S. - AKASAKI, I. - AMANO, H. In PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4. 2012, vol. 9, no. 3-4, p. 942-944. HADI, W.A. - GURAM, P.K. - SHUR, M.S. - O'LEARY, S.K. In JOURNAL OF APPLIED PHYSICS. MAR 21 2013, vol. 113, no. 11. Ghosh, K., Singisetti, U. 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In APPLIED PHYSICS EXPRESS. FEB 2015, vol. 8, no. 2. HAQ, M.R. - CHOWDHURY, R. - AFROSE, S. - CHOWDHURY, M.S.U. In 2016 3RD INTERNATIONAL CONFERENCE ON ELECTRICAL ENGINEERING AND INFORMATION & COMMUNICATION TECHNOLOGY (ICEEICT). 2016. TAKAI, S. - LU, Y. - ODA, O. - TAKEDA, K. - KONDO, H. - ISHIKAWA, K. - SEKINE, M. - HORI, M. In JAPANESE JOURNAL OF APPLIED PHYSICS. JUN 2017, vol. 56, no. 6. ISLAM, M.S. - AHAD, A. - AHMED, H. - ISLAM, S. Comparative Study Between AlGaN/GaN and AlInN/GaN High Electron Mobility Transistors. In 2018 10TH INTERNATIONAL CONFERENCE ON ELECTRICAL AND COMPUTER ENGINEERING (ICECE). 2018, p. 141-144. Dobročka, E. X-ray diffraction analysis of epitaxial layers with depth-dependent composition Materials Structures 26 (2019) 148-150. MOURI, Shinichiro - ARAKAWA, Shingo - OOE, Ukyo - NANISHI, Yasushi - ARAKI, Tsutomu. Van der Waals epitaxy of indium nitride crystals on graphitic structure by RF-MBE. In Zairyo/Journal of the Society of Materials Science, Japan. ISSN 05145163, 2020-10-15, 69, 10, pp. 701-706. HSU, C.W. - DEMINSKYI, P. - MARTINOVIC, I. - IVANOV, I.G. - PALISAITIS, J. - PEDERSEN, H. Direct epitaxial nanometer-thin InN of high structural quality on 4H-SiC by atomic layer deposition. In APPLIED PHYSICS LETTERS. ISSN 0003-6951, AUG 31 2020, vol. 117, no. 9. SINGH, V.K. - PANDEY, A. - TYAGI, R. Optimization of AlN spacer layer in MOVPE grown AlGaN/AlN/InGaN/GaN high electron mobility heterostructure. In 3RD INTERNATIONAL CONFERENCE ON CONDENSED MATTER & APPLIED PHYSICS (ICC-2019). ISSN 0094-243X, 2020, vol. 2220. OHTA, J. - UENO, K. - KOBAYASHI, A. - FUJIOKA, H. Feasibility of Fabricating Large-Area Inorganic Crystalline Semiconductor Devices. In INTELLIGENT NANOSYSTEMS FOR ENERGY, INFORMATION AND BIOLOGICAL TECHNOLOGIES. 2016, p. 249-275. HSU, C.W. - DEMINSKYI, P. - PERSSON, A. - KARLSSON, M. - PEDERSEN, H. On the dynamics in chemical vapor deposition of InN. In JOURNAL OF APPLIED PHYSICS. ISSN 0021-8979, OCT 7 2021, vol. 130, no. 13. ODA, O. - HORI, M. Novel Epitaxy for Nitride Semiconductors Using Plasma Technology. In PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. ISSN 1862-6300, JAN 2021, vol. 218, no. 1, SI. SAKAKITA, H. - KUMAGAI, N. - SHIMIZU, T. - KIM, J. - YAMADA, H. - WANG, X.L. Ammonia-free epitaxy of single-crystal InN using a plasma-integrated gas-injection module. In APPLIED MATERIALS TODAY. ISSN 2352-9407, JUN 2022, vol. 27. Dostupné na: https://doi.org/10.1016/j.apmt.2022.101489. KUMAGAI, N. - ITAGAKI, H. - KIM, J. - HIROSE, S. - SAKAKITA, H. - WANG, X.L. Comprehensive characterization of low-damaged GaN surface exposed to NH3 plasma toward plasma-induced metalorganic chemical vapor deposition. In APPLIED SURFACE SCIENCE. ISSN 0169-4332, JUL 30 2022, vol. 591. Dostupné na: https://doi.org/10.1016/j.apsusc.2022.153150. Kategória ADCA - Vedecké práce v zahraničných karentovaných časopisoch impaktovaných Kategória (od 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Typ výstupu článok Rok vykazovania 2011 Registrované v WOS Registrované v SCOPUS Registrované v CCC DOI 10.1088/0268-1242/29/3/035015 
článok
rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2011 2010 2.267 Q1 1.639 Q1
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