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Transport properties and barrier height evaluation in Ni/InAlN/GaN Schottky diodes
Názov Transport properties and barrier height evaluation in Ni/InAlN/GaN Schottky diodes Autor Donoval D. Spoluautori Chvála A. Šramatý R. Kováč Ján Morvan E. Dua C. di Forte Poisson M.A. Kordoš Peter SAVELEK - Elektrotechnický ústav SAV Zdroj.dok. Journal of Applied Physics. Vol. 109, (2011), 063711 Jazyk dok. eng - angličtina Druh dok. rozpis článkov z periodík (rbx) Ohlasy XIE, S. - FENG, Z.H. - ZHANG, S.L. - LIU, B. - MAO, L.H. In 2011 INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC). 2011. ARSLAN, E. - CAKMAK, H. - OZBAY, E. In MICROELECTRONIC ENGINEERING. DEC 2012, vol. 100, p. 51-56. BOBBY, A. - GUPTA, P.S. - ANTONY, B.K. In EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS. OCT 2012, vol. 60, no. 1. WANG, L. - LU, M. - WANG, X.A. - YU, Y.Q. - ZHAO, X.Z. - LV, P. - SONG, H.W. - ZHANG, X.W. - LUO, L.B. - WU, C.Y. - ZHANG, Y. - JIE, J.S. In JOURNAL OF MATERIALS CHEMISTRY A. 2013, vol. 1, no. 4, p. 1148-1154. 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KYAW, L.M. - LIU, Y. - LAI, M.Y. - BHAT, T.N. - TAN, H.R. - LIM, P.C. - TRIPATHY, S. - CHOR, E.F. In ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. 2016, vol. 5, no. 2, p. Q17-Q23. CYWINSKI, G. - SZKUDLAREK, K. - KRUSZEWSKI, P. - YAHNIUK, I. - YATSUNENKO, S. - MUZIOL, G. - SKIERBISZEWSKI, C. - KNAP, W. - RUMYANTSEV, S.L. In APPLIED PHYSICS LETTERS. JUL 18 2016, vol. 109, no. 3. MAEDA, T. - OKADA, M. - UENO, M. - YAMAMOTO, Y. - KIMOTO, T. - HORITA, M. - SUDA, J. In APPLIED PHYSICS EXPRESS. MAY 2017, vol. 10, no. 5. KOTANI, J. - YAMADA, A. - ISHIGURO, T. - YAMAGUCHI, H. - NAKAMURA, N. In JOURNAL OF APPLIED PHYSICS. MAR 21 2017, vol. 121, no. 11. BOURLIER, Y. - BOUTTEMY, M. - PATARD, O. - GAMARRA, P. - PIOTROWICZ, S. - VIGNERON, J. - AUBRY, R. - DELAGE, S. - ETCHEBERRY, A. Investigation of InAlN Layers Surface Reactivity after Thermal Annealings: A Complete XPS Study for HEMT. In ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. 2018, vol. 7, no. 6, p. P329-P338. SADOUN, A. - HIMA, A. - MANSOURI, S. - BENAMARA, Z. - CHELLALI, M. The effect of introduction of HfO2 on the electrical characterization of the Pt/ HfO2 / n-GaN. In 2018 INTERNATIONAL CONFERENCE ON COMMUNICATIONS AND ELECTRICAL ENGINEERING (ICCEE). 2018, p. 86-+. KIM, H. - SONG, K.M. Dislocation-Related Electron Transport in Au Schottky Junctions on AlGaN/GaN'. In TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS. APR 2018, vol. 19, no. 2, p. 101-105. KUMAR, S. - MALIK, A. - RAWAL, D.S. - VINAYAK, S. - MALIK, H.K. Performance Analysis of GaN/AlGaN HEMTs Passivation using Inductively Coupled Plasma Chemical Vapour Deposition and Plasma Enhanced Chemical Vapour Deposition Techniques. In DEFENCE SCIENCE JOURNAL. NOV 2018, vol. 68, no. 6, p. 572-576. OSVALD, J. - LALINSKY, T. - VANKO, G. High temperature current transport in gate oxides based (GaN)/AlGaN/GaN Schottky diodes. In APPLIED SURFACE SCIENCE. DEC 15 2018, vol. 461, SI, p. 206-211. SADOUN, A. - MANSOURI, S. - CHELLALI, M. - HIMA, A. - BENAMARA, Z. The effect of introduction of HfO2 on the electrical characterization of the Pt/HfOinf2/inf/n-GaN. In Proceedings International Conference on Communications and Electrical Engineering, ICCEE 2018, 2019-02-04, pp. RANADE, Ajinkya K. - MAHYAVANSHI, Rakesh D. - DESAI, Pradeep - KATO, Masashi - TANEMURA, Masaki - KALITA, Golap. Ultraviolet light induced electrical hysteresis effect in graphene-GaN heterojunction. In Applied Physics Letters. ISSN 00036951, 2019-04-15, 114, 15, pp. ASHERY, A. - SHABAN, H. - GAD, S.A. - MANSOUR, B.A. Investigation of electrical and capacitance- voltage characteristics of GO/TiO2/n-Si MOS device. In MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. ISSN 1369-8001, AUG 1 2020, vol. 114. CUI, P. - ZHANG, J. - YANG, T.Y. - CHEN, H. - ZHAO, H.C. - LIN, G.Y. - WEI, L.C. - XIAO, J.Q. - CHUEH, Y.L. - ZENG, Y.P. Effects of N2O surface treatment on the electrical properties of the InAlN/GaN high electron mobility transistors. In JOURNAL OF PHYSICS D-APPLIED PHYSICS. ISSN 0022-3727, FEB 6 2020, vol. 53, no. 6. KIM, H. - CHOI, S. - CHOI, B.J. Forward Current Transport Properties of AlGaN/GaN Schottky Diodes Prepared by Atomic Layer Deposition. In COATINGS. FEB 2020, vol. 10, no. 2. JANG, Junho - SONG, Jaeman - LEE, Seung S. - JEONG, Sangkwon - LEE, Bong Jae - KIM, Sanghyeon. Analysis of temperature-dependent I-V characteristics of the Au/n-GaSb Schottky diode. In MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. ISSN 1369-8001, 2021, vol. 131, no., pp. Dostupné na: https://doi.org/10.1016/j.mssp.2021.105882. JANG, Junho - GEUM, Dae-Myeong - KIM, SangHyeon. Broadband Au/n-GaSb Schottky photodetector array with a spectral range from 300 nm to 1700nm. In OPTICS EXPRESS. ISSN 1094-4087, 2021, vol. 29, no. 23, pp. 38894-38903. Dostupné na: https://doi.org/10.1364/OE.443094. SHABAN, H. - MAHDY, M.A. - MOUSTAFA, S.H. - EL ZAWAWI, I.K. Influence of substrate temperature on the structural, optical properties, and I-V characteristics of n-AgInSe2/p-Si heterojunctions. In MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS. ISSN 0921-5107, DEC 2023, vol. 298. Dostupné na: https://doi.org/10.1016/j.mseb.2023.116853. Kategória ADCA - Vedecké práce v zahraničných karentovaných časopisoch impaktovaných Kategória (od 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Typ výstupu článok Rok vykazovania 2011 Registrované v WOS Registrované v SCOPUS Registrované v CCC DOI 10.1063/1.3560919 
článok
rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2011 2010 2.079 Q2 1.484 Q1
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