Počet záznamov: 1
Dislocation dynamics and slip band formation in silicon: In-situ study by X-ray diffraction imaging
Názov Dislocation dynamics and slip band formation in silicon: In-situ study by X-ray diffraction imaging Autor Danilewsky A. Spoluautori Wittge J. Cröll A. Allen David McNally P. Vagovič Patrik SAVELEK - Elektrotechnický ústav SAV dos Santos Rolo T. Li Z.J. Baumbach T. Gorostegui-Colinas E. Garagorri J. Elizelde M.R. Fossati M.C. Bowen D.K. Tanner B.K. Zdroj.dok. Journal of Crystal Growth. Vol. 318, (2011), p. 1157-1163 Jazyk dok. eng - angličtina Druh dok. rozpis článkov z periodík (rbx) Ohlasy REIMANN, C. - FRIEDRICH, J. - MEISSNER, E. - ORIWOL, D. - SYLLA, L. In ACTA MATERIALIA. JUL 2015, vol. 93, p. 129-137. WOO, S. - BERTONI, M. - CHOI, K. - NAM, S. - CASTELLANOS, S. - POWELL, D.M. - BUONASSISI, T. - CHOI, H. In SOLAR ENERGY MATERIALS AND SOLAR CELLS. OCT 2016, vol. 155, p. 88-100. BECKER, Maike - REGULA, Gabrielle - REINHART, Guillaume - ROLLER, Elodie - VALADE, Jean-Paul - RACK, Alexander - TAFFOREAU, Paul - MANGELINCK-NOEL, Nathalie. Simultaneous X-ray radiography and diffraction topography imaging applied to silicon for defect analysis during melting and crystallization. In JOURNAL OF APPLIED CRYSTALLOGRAPHY. ISSN 0021-8898, 2019, vol. 52, no., pp. 1312-1320. OUADDAH, H. - BECKER, M. - RIBERI-BERIDOT, T. - TSOUTSOUVA, M. - STAMELOU, V. - REGULA, G. - REINHART, G. - PERICHAUD, I. - GUITTONNEAU, F. - BARRALLIER, L. - VALADE, J.P. - RACK, A. - BOLLER, E. - BARUCHEL, J. - MANGELINCK-NOEL, N. X-ray Based in Situ Investigation of Silicon Growth Mechanism Dynamics-Application to Grain and Defect Formation. In CRYSTALS. ISSN 2073-4352, JUL 2020, vol. 10, no. 7. CHUKHOVSKII, F.N. - KONAREV, P.V. - VOLKOV, V.V. Towards a solution of the inverse X-ray diffraction tomography challenge: theory and iterative algorithm for recovering the 3D displacement field function of Coulomb-type point defects in a crystal. In ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES. ISSN 2053-2733, MAR 2020, vol. 76, 2, p. 163-171. ZOLOTOV, D. A. - ASADCHIKOV, V. E. - BUZMAKOV, A. V. - DYACHKOVA, I. G. - SUVOROV, E. V. Unusual X-Shaped Defects in the Silicon Single Crystal Subjected to Four-Point Bending. In JETP LETTERS. ISSN 0021-3640, 2021, vol. 113, no. 3, pp. 149-154. Dostupné na: https://doi.org/10.1134/S0021364021030115. BASHKATOV, Dmitriy D. - MILAKHIN, Denis S. - MALIN, Timur V. - VDOVIN, Vladimir I. - KOZHUKHOV, Anton S. - ZHURAVLEV, Konstantin S. Preparation of Silicon (111) Surface for Epitaxial Growth of III-Nitride Structures by MBE. In International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM, 2022-01-01, 2022-June, pp. 1-5. ISSN 23254173. Dostupné na: https://doi.org/10.1109/EDM55285.2022.9855155. MALIN, T. - MILAKHIN, D. - MANSUROV, V. - VDOVIN, V. - KOZHUKHOV, A. - LOSHKAREV, I. - ALEKSANDROV, I. - PROTASOV, D. - ZHURAVLEV, K. Electrophysical parameter comparison of 2DEG in AlGaN/GaN heterostructures grown by the NH3-MBE technique on sapphire and silicon substrates. In JOURNAL OF CRYSTAL GROWTH. ISSN 0022-0248, JUN 15 2022, vol. 588. Dostupné na: https://doi.org/10.1016/j.jcrysgro.2022.126669. DIAS, S.W.N. - BECKER, M. - OUADDAH, H. - PERICHAUD, I. - REINHART, G. - MANGELINCK-NOEL, N. - REGULA, G. Dislocation Dynamics in Monocrystalline Si near the Melting Point Studied in Situ by X-Ray Bragg Diffraction Imaging. In PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS. ISSN 0370-1972, JUN 2022, vol. 259, no. 6. Dostupné na: https://doi.org/10.1002/pssb.202100594. WANG, Z.H. - LEONG, A.F.T. - DRAGONE, A. - GLEASON, A.E. - BALLABRIGA, R. - CAMPBELL, C. - CAMPBELL, M. - CLARK, S.J. - DA VIà, C. - DATTELBAUM, D.M. - DEMARTEAU, M. - FABRIS, L. - FEZZAA, K. - FOSSUM, E.R. - GRUNER, S.M. - HUFNAGEL, T.C. - JU, X.L. - LI, K. - LLOPART, X. - LUKIC, B. - RACK, A. - STREHLOW, J. - THERRIEN, A.C. - THOM-LEVY, J. - WANG, F.X. - XIAO, T.Q. - XU, M.W. - YUE, X. Ultrafast radiographic imaging and tracking: An overview of instruments, methods, data, and applications. In NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT. ISSN 0168-9002, DEC 2023, vol. 1057. Dostupné na: https://doi.org/10.1016/j.nima.2023.168690. HUANG, N. - ZHOU, P. - GOEL, S. Microscopic stress analysis of nanoscratch induced sub-surface defects in a single-crystal silicon wafer. In PRECISION ENGINEERING-JOURNAL OF THE INTERNATIONAL SOCIETIES FOR PRECISION ENGINEERING AND NANOTECHNOLOGY. ISSN 0141-6359, JUL 2023, vol. 82, p. 290-303. Dostupné na: https://doi.org/10.1016/j.precisioneng.2023.04.006. CHUKHOVSKII, F.N. - KONAREV, P.V. - VOLKOV, V.V. Denoising of the Poisson-Noise Statistics 2D Image Patterns in the Computer X-ray Diffraction Tomography. In CRYSTALS. APR 2023, vol. 13, no. 4. Dostupné na: https://doi.org/10.3390/cryst13040561. Kategória ADCA - Vedecké práce v zahraničných karentovaných časopisoch impaktovaných Kategória (od 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Typ výstupu článok Rok vykazovania 2011 Registrované v WOS Registrované v SCOPUS Registrované v CCC DOI 10.1016/j.jcrysgro.2010.10.199 
článok
rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2011 2010 1.746 Q2 1.157 Q1
Počet záznamov: 1