Počet záznamov: 1
Influence of processing and annealing steps on electrical properties of InAlN/GaN high electron mobility transistor with Al2O3 gate insulation and passivation
Názov Influence of processing and annealing steps on electrical properties of InAlN/GaN high electron mobility transistor with Al2O3 gate insulation and passivation Autor Čičo Karol SAVELEK - Elektrotechnický ústav SAV Spoluautori Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV ORCID Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ORCID Jurkovič Michal SAVELEK - Elektrotechnický ústav SAV Alexewicz A. di Forte Poisson M.A. Pogany D. Strasser G. Delage S. Fröhlich Karol 1954 SAVELEK - Elektrotechnický ústav SAV ORCID Zdroj.dok. Solid-State Electronics. Vol. 67 (2012), p. 74-78 Jazyk dok. eng - angličtina Druh dok. rozpis článkov z periodík (rbx) Ohlasy LIU, X. - YELURI, R. - LU, J. - MISHRA, U.K. In JOURNAL OF ELECTRONIC MATERIALS. JAN 2013, vol. 42, no. 1, p. 33-39. SINGH, S.P. - LIU, Y. - NGOO, Y.J. - KYAW, L.M. - BERA, M.K. - DOLMANAN, S.B. - TRIPATHY, S. - CHOR, E.F. In JOURNAL OF PHYSICS D-APPLIED PHYSICS. SEP 16 2015, vol. 48, no. 36. LIN, C.C. - HUANG, J.J. - WUU, D.S. - CHEN, C.N. In THIN SOLID FILMS. NOV 1 2016, vol. 618, A, SI, p. 118-123. DUTTA, G. - DASGUPTA, N. - DASGUPTA, A. In IEEE TRANSACTIONS ON ELECTRON DEVICES. APR 2016, vol. 63, no. 4, p. 1450-1458. XIAO, L.H. - DENG, H. - LI, F.L. - QI, J.H. - ZHAO, J. - ZHANG, B.C. In 2016 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE (CSTIC). 2016. MURUGAPANDIYAN, P. - RAVIMARAN, S. - WILLIAM, J. In JOURNAL OF SEMICONDUCTORS. AUG 2017, vol. 38, no. 8. KANAGA, S. - KUSHWAH, B. - DUTTA, G. - DASGUPTA, N. - DASGUPTA, A. AlInN/GaN MIS-HEMTs with High Pressure Oxidized Aluminium as Gate Dielectric. In 2018 IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, COMPUTING AND COMMUNICATION TECHNOLOGIES (CONECCT). 2018. MURUGAPANDIYAN, P. - RAVIMARAN, S. - WILLIAM, J. - BORDEKAR, L.D. DC and Microwave Characteristics of L-g 20 nm T-Gate Enhancement Mode Al0.5Ga0.5N/AlN/GaN/Al0.08Ga0.92N High Electron Mobility Transistor for Next Generation High Power Millimeter Wave Applications. In JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS. FEB 2018, vol. 13, no. 2, p. 183-189. WANG, H.Y. - WANG, J.Y. - LI, M.J. - HE, Y.D. - WANG, M.J. - YU, M. - WU, W.G. - ZHOU, Y. - DAI, G. An "ohmic-first" self-terminating gate-recess technique for normally-off Al2O3/GaN MOSFET. In JAPANESE JOURNAL OF APPLIED PHYSICS. APR 2018, vol. 57, no. 4, SI. KANAGA, S. - DUTTA, G. - KUSHWAH, B. - DASGUPTA, N. - DASGUPTA, A. Low Temperature and High Pressure Oxidized Al2O3 as Gate Dielectric for AlInN/GaN MIS-HEMTs. In IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. ISSN 1530-4388, SEPT 2020, vol. 20, no. 3, p. 613-621. OZAKI, S. - MAKIYAMA, K. - OHKI, T. - OKAMOTO, N. - KUMAZAKI, Y. - KOTANI, J. - KANEKI, S. - NISHIGUCHI, K. - NAKAMURA, N. - HARA, N. - HASHIZUME, T. Improved DC performance and current stability of ultrathin-Al2O3/InAlN/GaN MOS-HEMTs with post-metallization-annealing process. In SEMICONDUCTOR SCIENCE AND TECHNOLOGY. ISSN 0268-1242, MAR 2020, vol. 35, no. 3. SUPARDAN, S.N. - DAS, P. - MAJOR, J.D. - HANNAH, A. - ZAIDI, Z.H. - MAHAPATRA, R. - LEE, K.B. - VALIZADEH, R. - HOUSTON, P.A. - HALL, S. - DHANAK, V.R. - MITROVIC, I.Z. Band alignments of sputtered dielectrics on GaN. In JOURNAL OF PHYSICS D-APPLIED PHYSICS. ISSN 0022-3727, FEB 13 2020, vol. 53, no. 7. BORDOLOI, S. - RAY, A. - TRIVEDI, G. Introspection Into Reliability Aspects in AlGaN/GaN HEMTs With Gate Geometry Modification. In IEEE ACCESS. ISSN 2169-3536, 2021, vol. 9, p. 99828-99841. OZAKI, S. - YAITA, J. - YAMADA, A. - MINOURA, Y. - OHKI, T. - OKAMOTO, N. - NAKAMURA, N. - KOTANI, J. Surface-Oxide-Controlled InAlGaN/GaN High-Electron-Mobility Transistors Using Al2O3-Based Insulated-Gate Structures with H2O Vapor Pretreatment. In PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. ISSN 1862-6300, APR 2022, vol. 219, no. 7. Dostupné na: https://doi.org/10.1002/pssa.202100638. Kategória ADCA - Vedecké práce v zahraničných karentovaných časopisoch impaktovaných Kategória (od 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Typ výstupu článok Rok vykazovania 2012 Registrované v WOS Registrované v SCOPUS Registrované v CCC DOI 10.1016/j.sse.2011.09.002 
článok
rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2012 2011 1.397 Q2 0.903 Q1
Počet záznamov: 1