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Aluminium oxide as passivation and gate insulator in GaAs-based field-effect transistors prepared in situ by metal-organic vapor deposition
Názov Aluminium oxide as passivation and gate insulator in GaAs-based field-effect transistors prepared in situ by metal-organic vapor deposition Autor Kordoš Peter SAVELEK - Elektrotechnický ústav SAV Spoluautori Kúdela Róbert 1952 SAVELEK - Elektrotechnický ústav SAV Stoklas Roman 1981 SAVELEK - Elektrotechnický ústav SAV ORCID Čičo Karol SAVELEK - Elektrotechnický ústav SAV Mikulics M. Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV ORCID Novák Jozef 1951 SAVELEK - Elektrotechnický ústav SAV Zdroj.dok. Applied Physics Letters. Vol. 100, (2012), 142113 Jazyk dok. eng - angličtina Druh dok. rozpis článkov z periodík (rbx) Ohlasy WANG, L.S. - XU, J.P. - ZHU, S.Y. - HUANG, Y. - LAI, P.T. In APPLIED PHYSICS LETTERS. AUG 26 2013, vol. 103, no. 9. AOKI, T. - FUKUHARA, N. - OSADA, T. - SAZAWA, H. - HATA, M. - INOUE, T. In APPLIED PHYSICS EXPRESS. OCT 2014, vol. 7, no. 10. WANG, L.S. - XU, J.P. - LIU, L. - TANG, W.M. - LAI, P.T. In APPLIED PHYSICS EXPRESS. JUN 2014, vol. 7, no. 6. LIU, L.N. - CHOI, H.W. - XU, J.P. - LAI, P.T. In APPLIED PHYSICS LETTERS. NOV 23 2015, vol. 107, no. 21. LIU, L.N. - CHOI, H.W. - LAI, P.T. - XU, J.P. In JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. SEP 2015, vol. 33, no. 5. LIU, L.N. - CHOI, H.W. - XU, J.P. - LAI, P.T. In PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS. SEP 2016, vol. 10, no. 9, p. 703-707. MOILLE, G. - COMBRIE, S. - MORGENROTH, L. - LEHOUCQ, G. - NEUILLY, F. - HU, B.W. - DECOSTER, D. - DE ROSSI, A. In LASER & PHOTONICS REVIEWS. MAY 2016, vol. 10, no. 3, p. 409-419. LIU, L.N. - CHOI, H.W. - XU, J.P. - LAI, P.T. In APPLIED PHYSICS LETTERS. MAR 20 2017, vol. 110, no. 12. LIU, L.N. - CHOI, H.W. - XU, J.P. - LAI, P.T. In PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS. SEP 2017, vol. 11, no. 9. LIU, L.N. - CHOI, H.W. - XU, J.P. - TANG, W.M. - LAI, P.T. GaAs Metal-Oxide-Semiconductor Capacitor With Nd-Based High-k Oxynitrides as Gate Dielectric and Passivation Layer. In IEEE TRANSACTIONS ON ELECTRON DEVICES. JAN 2018, vol. 65, no. 1, p. 72-78. IZSAK, Tibor - VANKO, Gabriel - BABCENKO, Oleg - VINCZE, Andrej - VOJS, Marian - ZATKO, Bohumir - KROMKA, Alexander. Influence of SiON interlayer on the diamond/GaN heterostructures studied by Raman and SIMS measurements. In MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2021, vol. 273, no., pp. ISSN 0921-5107. Dostupné na: https://doi.org/10.1016/j.mseb.2021.115434. VIMALA, P. - SHREE, Navya - PRIYADARSHINI, U. - SAMUEL, T. S. Arun. Improving on current using new double-material heterojunction gate all around TFET (DMHJGAA TFET): Modeling and simulation. In INTERNATIONAL JOURNAL OF COMPUTATIONAL MATERIALS SCIENCE AND ENGINEERING, 2021, vol. 10, no. 04, pp. ISSN 2047-6841. Dostupné na: https://doi.org/10.1142/S2047684121500214. Kategória ADCA - Vedecké práce v zahraničných karentovaných časopisoch impaktovaných Kategória (od 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Typ výstupu článok Rok vykazovania 2012 Registrované v WOS Registrované v SCOPUS Registrované v CCC DOI 10.1063/1.3701584 
článok
rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2012 2011 3.844 Q1 2.814 Q1
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