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Non-uniform distribution of induced strain in gate recessed AlGaN/GaN structure evaluated by micro PL measurements
Názov Non-uniform distribution of induced strain in gate recessed AlGaN/GaN structure evaluated by micro PL measurements Autor Mikulics M. Spoluautori Hartdegen H. Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV ORCID Sofer Z. Šimek P. Trellenkamp St. Grützmacher D. Luth H. Kordoš Peter SAVELEK - Elektrotechnický ústav SAV Marso M. Zdroj.dok. Semiconductor Science and Technology. Vol. 27 (2012), no. 105008 Jazyk dok. eng - angličtina Druh dok. rozpis článkov z periodík (rbx) Ohlasy AFZAL, N. - DEVARAJAN, M. - IBRAHIM, K. In MATERIALS RESEARCH EXPRESS. AUG 2016, vol. 3, no. 8. BAI, D. - WU, T. - LI, X. - GAO, X.M. - XU, Y. - CAO, Z.P. - ZHU, H.B. - WANG, Y.J. In APPLIED PHYSICS B-LASERS AND OPTICS. JAN 2016, vol. 122, no. 1. YUAN, J.L. - GAO, X.M. - YANG, Y.C. - ZHU, G.X. - YUAN, W. - CHOI, H.W. - ZHANG, Z.Y. - WANG, Y.J. In SEMICONDUCTOR SCIENCE AND TECHNOLOGY. APR 2017, vol. 32, no. 4. LIU, Q.F. - WANG, H.H. - HE, S.M. - SA, T.L. - CHENG, X.F. - XU, R.Q. Design of micro-nano grooves incorporated into suspended GaN membrane for active integrated optics. In AIP ADVANCES. NOV 2018, vol. 8, no. 11. YAMADA, A. - YAITA, J. - NAKAMURA, N. - KOTANI, J. Low-sheet-resistance high-electron-mobility transistor structures with strain-controlled high-Al-composition AlGaN barrier grown by MOVPE. In JOURNAL OF CRYSTAL GROWTH. ISSN 0022-0248, APR 15 2021, vol. 560. YAMADA, A. - YAITA, J. - KOTANI, J. Enhancement of two-dimensional electron gas mobility using strain reduced AlGaN barriers grown by metalorganic vapor phase epitaxy under nitrogen atmosphere. In JAPANESE JOURNAL OF APPLIED PHYSICS. ISSN 0021-4922, JUL 1 2022, vol. 61, no. 7. Dostupné na: https://doi.org/10.35848/1347-4065/ac7624. Liu, Y., Chen, S., Cheng, Z., Wang, T., Huang, C., Jiang, G., Zhang, H., Cai, Y.: Temperature dependence of the strain of the AlGaN barrier layer under the gate in AlGaN/AlN/GaN HFETs In Micro and NanostructuresVolume 164 (2022) 107160 CHEN, Y. - SHI, Z.M. - ZHANG, S.L. - YUE, Y.Y. - ZANG, H. - BEN, J.W. - JIANG, K. - JIA, Y.P. - SUN, X.J. - LI, D.B. Centimeter-Transferable III-Nitride Membrane Enabled by Interfacial Adhesion Control for a Flexible Photosensitive Device. In ACS APPLIED MATERIALS & INTERFACES. ISSN 1944-8244, JUN 22 2023, vol. 15, no. 26, p. 31954-31965. Dostupné na: https://doi.org/10.1021/acsami.3c04213. Kategória ADCA - Vedecké práce v zahraničných karentovaných časopisoch impaktovaných Kategória (od 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Typ výstupu článok Rok vykazovania 2012 Registrované v WOS Registrované v SCOPUS Registrované v CCC DOI 10.1088/0268-1242/27/10/105008 
článok
rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2012 2011 1.723 Q1 1.008 Q1
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