Počet záznamov: 1
Micromachined membrane structures for pressure sensors based on AlGaN/GaN circular HEMT sensing device
Názov Micromachined membrane structures for pressure sensors based on AlGaN/GaN circular HEMT sensing device Autor Lalinský Tibor 1951 SAVELEK - Elektrotechnický ústav SAV Spoluautori Hudek Peter 1953- SCOPUS RID ORCID Vanko Gabriel 1981 SAVELEK - Elektrotechnický ústav SAV ORCID Dzuba Jaroslav 1987 SAVELEK - Elektrotechnický ústav SAV Kutiš V. Srnánek R. Choleva P. Vallo Martin SAVELEK - Elektrotechnický ústav SAV Držík Milan Matay Ladislav 1950- SAVINFO - Ústav informatiky SAV SCOPUS RID Kostič Ivan 1955- SAVINFO - Ústav informatiky SAV SCOPUS RID ORCID Zdroj.dok. Microelectronic Engineering : an international journal of semiconductor manufacturing technology. Vol. 98, (2012), p. 578-581 Jazyk dok. eng - angličtina Druh dok. rozpis článkov z periodík (rbx) Ohlasy WANG, Cong - CHO, Sung-Jin - KIM, Nam-Young. Comparison of SiO2-based double passivation scheme by e-beam evaporation and PECVD for surface passivation and gate oxide in AlGaN/GaN HEMTs. In MICROELECTRONIC ENGINEERING. ISSN 0167-9317, 2013, vol. 109, no., pp. 24. LINGANISO, Ella C. - RODRIGUES, Rafael - MHLANGA, Sabelo D. - MWAKIKUNGA, Bonex W. - COVILLE, Neil J. - HUMMELGEN, Ivo A. GaN nanostructures-poly(vinyl alcohol) composite based hydrostatic pressure sensor device. In MATERIALS CHEMISTRY AND PHYSICS. ISSN 0254-0584, 2013, vol. 143, no. 1, pp. 367. TIGINYANU, Ion - TIGINYANU, Ion - URSAKI, Veaceslav. GaN nanostructuring for the fabrication of thin membranes and emerging applications. In Turkish Journal of Physics. ISSN 13000101, 2014-01-01, 38, 3, pp. 328-368. HAEHNLEIN, Bernd - TONISCH, Katja - ECKE, Gernot - GRIESELER, Rolf - MICHAEL, Steffen - SCHAAF, Peter - PEZOLDT, Joerg - HILDEBRANDT, S. AlGaN based MEMS structures. In PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 2. ISSN 1862-6351, 2014, vol. 11, no. 2, pp. 239. AL-SHIBAANY, Zeyad Yousif Abdoon - HEDLEY, John - HUO, Dehong - HU, Zhongxu. Micromachining Lithium Niobate for Rapid Prototyping of Resonant Biosensors. In 27TH INTERNATIONAL CONFERENCE ON CADCAM, ROBOTICS AND FACTORIES OF THE FUTURE 2014. ISSN 1757-8981, 2014, vol. 65, no., pp. SENESKY, Debbie G. - SO, Hongyun - SURIA, Ateeq J. - YALAMARTHY, Ananth Saran - JAIN, Sambhav R. - CHAPIN, Caitlin A. - CHIAMORI, Heather C. - HOU, Minmin. Gallium nitride microelectronics for high-temperature environments. In Semiconductor-Based Sensors, 2016-10-01, pp. 395-433. DOWLING, Karen M. - SO, Hongyun - TOOR, Anju - CHAPIN, Caitlin A. - SENESKY, Debbie G. Lithography-free microfabrication of AlGaN/GaN 2DEG strain sensors using laser ablation and direct wire bonding. In MICROELECTRONIC ENGINEERING. ISSN 0167-9317, 2017, vol. 173, no., pp. 54-57. CHAPIN, Caitlin A. - MILLER, Ruth A. - CHEN, Ruiqi - DOWLING, Karen M. - SENESKY, Debbie G. LOW-TEMPERATURE AND PRESSURE RESPONSE OF InAlN/GaN RING-SHAPED HIGH ELECTRON MOBILITY TRANSISTORS. In 2017 19TH INTERNATIONAL CONFERENCE ON SOLID-STATE SENSORS, ACTUATORS AND MICROSYSTEMS (TRANSDUCERS), 2017, vol., no., pp. 786-789. ZHANG, Shuai - SHI, Zheng - YUAN, Jialei - GAO, Xumin - CAI, Wei - JIANG, Yuan - LIU, Yuhuai - WANG, Yongjin. Membrane Light-Emitting Diode Flow Sensor. In ADVANCED MATERIALS TECHNOLOGIES. ISSN 2365-709X, 2018, vol. 3, no. 3, pp. GAJULA, Durga - JAHANGIR, Ifat - KOLEY, Goutam. High Temperature AlGaN/GaN Membrane Based Pressure Sensors. In MICROMACHINES. ISSN 2072-666X, 2018, vol. 9, no. 5, pp. TADJER, Marko J. - RAAD, Peter E. - KOMAROV, Pavel L. - HOBART, Karl D. - FEYGELSON, Tatyana - KOEHLER, Andrew D. - ANDERSON, Travis J. - NATH, Anindya - PATE, Bradford - KUB, Fritz J. Electrothermal Evaluation of AlGaN/GaN Membrane High Electron Mobility Transistors by Transient Thermoreflectance. In IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. ISSN 2168-6734, 2018, vol. 6, no. 1, pp. 922-930. TAN, X. - LV, Y. J. - ZHOU, X. Y. - WANG, Y. G. - SONG, X. B. - GU, G. D. - JI, P. F. - YANG, X. L. - SHEN, B. - FENG, Z. H. - CAI, S. J. AlGaN/GaN pressure sensor with a Wheatstone bridge structure. In AIP ADVANCES. ISSN 2158-3226, 2018, vol. 8, no. 8, pp. TAN, Xin - LV, Yuanjie - ZHOU, Xingye - SONG, Xubo - WANG, Yuangang - GU, Guodong - GUO, Hongyu - LIANG, Shixiong - FENG, Zhihong - CAI, Shujun. High performance AlGaN/GaN pressure sensor with a Wheatstone bridge circuit. In MICROELECTRONIC ENGINEERING. ISSN 0167-9317, 2020, vol. 219, no., pp. SUN, Jianwen - HU, Dong - LIU, Zewen - MIDDELBURG, Luke M. - VOLLEBREGT, Sten - SARRO, Pasqualina M. - ZHANG, Guoqi. Low power AlGaN/GaN MEMS pressure sensor for high vacuum application. In SENSORS AND ACTUATORS A-PHYSICAL. ISSN 0924-4247, 2020, vol. 314, no., pp. MIDDELBURG, L.M. - VAN DRIEL, W.D. - ZHANG, G.Q. From Si towards SiC technology for harsh environment sensing. In Sensor Systems Simulations. ISBN 978-3-030-16577-2, 2020, pp. 1-15. CUENCA, Jerome A. - SMITH, Matthew D. - FIELD, Daniel E. - MASSABUAU, Fabien C-P - MANDAL, Soumen - POMEROY, James - WALLIS, David J. - OLIVER, Rachel A. - THAYNE, Iain - KUBALL, Martin - WILLIAMS, Oliver A. Thermal stress modelling of diamond on GaN/III-Nitride membranes. In CARBON. ISSN 0008-6223, 2021, vol. 174, no., pp. 647-661. Dostupné na: https://doi.org/10.1016/j.carbon.2020.11.067. MOSER, Matthias - PRADHAN, Mamta - ALOMARI, Mohammed - BURGHARTZ, Joachim N. Model and Simulation of GaN-Based Pressure Sensors for High Temperature Applications-Part II: Sensor Design and Simulation. In IEEE SENSORS JOURNAL. ISSN 1530-437X, 2021, vol. 21, no. 18, pp. 20176-20183. Dostupné na: https://doi.org/10.1109/JSEN.2021.3096695. NGUYEN, Hong-Quan - NGUYEN, Thanh - TANNER, Philip - NGUYEN, Tuan-Khoa - FOISAL, Abu Riduan Md - FASTIER-WOOLLER, Jarred - NGUYEN, Tuan-Hung - PHAN, Hoang-Phuong - NGUYEN, Nam-Trung - DAO, Dzung Viet. Piezotronic effect in a normally off p-GaN/AlGaN/GaN HEMT toward highly sensitive pressure sensor. In APPLIED PHYSICS LETTERS. ISSN 0003-6951, 2021, vol. 118, no. 24, pp. Dostupné na: https://doi.org/10.1063/5.0053701. AL-MAMUN, Nahid Sultan - WETHERINGTON, Maxwell - WOLFE, Douglas E. - HAQUE, Aman - REN, Fan - PEARTON, Stephen. Local strain modification effects on global properties of AlGaN/GaN high electron mobility transistors. In MICROELECTRONIC ENGINEERING, 2022, vol. 262, no., pp. ISSN 0167-9317. Dostupné na: https://doi.org/10.1016/j.mee.2022.111836. NGUYEN, Hong-Quan - FOISAL, Abu Riduan Md - TANNER, Philip - NGUYEN, Tuan-Hung - ABEROUMAND, Sadegh - DAU, Van Thanh - DINH, Toan - DIMITRIJEV, Sima - PHAN, Hoang-Phuong - NGUYEN, Nam-Trung - DAO, Dzung Viet. Giant Piezotronic Effect by Photoexcitation-Electronic Coupling in a p-GaN/AlGaN/GaN Heterojunction. In ACS APPLIED ELECTRONIC MATERIALS, 2022, vol. 4, no. 6, pp. 2648-2655. Dostupné na: https://doi.org/10.1021/acsaelm.2c00111. NALLUSAMY, Nagarajan - SINGHAL, Rahul - SHARMA, Sunil Kumar - RAWAL, Dipendra Singh. High-Electron-Mobility Transistor-Inspired Freestanding AlGaN/GaN/AlN Optical Waveguide for High-Pressure Sensing Applications. In PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2023, vol. 220, no. 7, pp. ISSN 1862-6300. Dostupné na: https://doi.org/10.1002/pssa.202200637. MOSER, Matthias - PRADHAN, Mamta - ALOMARI, Mohammed - HEUKEN, Michael - SCHMITT, Thomas - KALLFASS, Ingmar - BURGHARTZ, Joachim N. PECVD SiNinfx/inf passivation with more than 8 MV/cm breakdown strength for GaN-on-Si wafer stress management. In Power Electronic Devices and Components, 2023-03-01, 4, pp. Dostupné na: https://doi.org/10.1016/j.pedc.2022.100032. Kategória ADCA - Vedecké práce v zahraničných karentovaných časopisoch impaktovaných Kategória (od 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Typ výstupu článok Rok vykazovania 2012 Registrované v WOS Registrované v SCOPUS Registrované v CCC DOI 10.1016/j.mee.2012.06.014 
článok
rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2012 2011 1.557 Q2 0.813 Q1
Počet záznamov: 1