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Distribution of fixed oxide charge in MOS structures with ALD grown Al2O3 studied by capacitance measurements
Názov Distribution of fixed oxide charge in MOS structures with ALD grown Al2O3 studied by capacitance measurements Autor Valik L. SAVELEK - Elektrotechnický ústav SAV Spoluautori Ťapajna Milan 1977 SAVELEK - Elektrotechnický ústav SAV ORCID Gucmann Filip 1987 SAVELEK - Elektrotechnický ústav SAV ORCID Fedor Ján 1976 SAVELEK - Elektrotechnický ústav SAV Šiffalovič Peter 1975 SAVFYZIK - Fyzikálny ústav SAV ORCID Fröhlich Karol 1954 SAVELEK - Elektrotechnický ústav SAV ORCID Zdroj.dok. ASDAM 2012 : conference proceedings. P. 227-230. - Piscataway : IEEE, 2012 / Haščík Štefan 1956 ; Osvald Jozef 1953 ; International Conference on Advanced Semiconductor Devices and Microsystems ASDAM 2012 Jazyk dok. eng - angličtina Druh dok. rozpis článkov z periodík (rzb) Ohlasy FREEDSMAN, Joseph Jesudass - KUBO, Toshiharu - EGAWA, Takashi. High Drain Current Density E-Mode Al2O3/AlGaN/GaN MOS-HEMT on Si With Enhanced Power Device Figure-of-Merit (4 x 10(8) V-2 Omega(-1)cm(-2)). In IEEE TRANSACTIONS ON ELECTRON DEVICES. ISSN 0018-9383, 2013, vol. 60, no. 10, pp. 3079-3083. SAMANTA, Piyas. A comprehensive technique for estimation of process-induced fixed charges and effective work function of the metal gate on high-kappa/SiO2 stack. In SEMICONDUCTOR SCIENCE AND TECHNOLOGY. ISSN 0268-1242, 2019, vol. 34, no. 11, 115008. ZHAO, S. - YUAN, G.D. - ZHANG, D. - XU, P.F. - LI, G.Z. - HAN, W.H. Formation and elimination mechanism of thermal blistering in Al2O3/Si system. In JOURNAL OF MATERIALS SCIENCE. ISSN 0022-2461, NOV 2021, vol. 56, no. 31, p. 17478-17489. ARROYO, J. Meza - RAO, M. G. Syamala - VENTURA, M. S. de Urquijo - MARTINEZ-LANDEROS, V. H. - DAUNIS, Trey B. B. - RODRIGUEZ, Ovidio - HSU, Julia W. P. - BON, R. Ramirez. All solution-processed hafnium rich hybrid dielectrics for hysteresis free metal-oxide thin-film transistors. In JOURNAL OF MATERIALS CHEMISTRY C, 2023, vol. 11, no. 5, pp. 1824-1841. ISSN 2050-7526. Dostupné na: https://doi.org/10.1039/d2tc03761k. GAO, Dawei - SHENOY, Rahul - YI, Suin - LEE, Jungmin - XU, Mingjie - RONG, Zixuan - DEO, Atharva - NATHAN, Dhruva - ZHENG, Jian-Guo - WILLIAMS, R. Stanley - CHEN, Yong. Synaptic Resistor Circuits Based on Al Oxide and Ti Silicide for Concurrent Learning and Signal Processing in Artificial Intelligence Systems. In ADVANCED MATERIALS, 2023, vol. 35, no. 15, pp. ISSN 0935-9648. Dostupné na: https://doi.org/10.1002/adma.202210484. Kategória AFC - Publikované príspevky na zahraničných vedeckých konferenciách Rok vykazovania 2012 Registrované v WOS Registrované v SCOPUS DOI 10.1109/ASDAM.2012.6418526 
článok
rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2012
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