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Pressure and temperature dependence of GaN/AlGaN HEMT based sensors on a sapphire membrane
Názov Pressure and temperature dependence of GaN/AlGaN HEMT based sensors on a sapphire membrane Autor Edwards M.J. Spoluautori Le Boulbar E.D. Vittoz S. Vanko Gabriel 1981 SAVELEK - Elektrotechnický ústav SAV ORCID Brinkfeldt K. Rufer L. Johander P. Lalinský Tibor 1951 SAVELEK - Elektrotechnický ústav SAV Bowen C.R. Allsopp D.W.E. Zdroj.dok. Physica status solidi C. Current topics in solid state physics. Vol. 9, (2012), p. 960-963 Jazyk dok. eng - angličtina Druh dok. rozpis článkov z periodík (rbx) Ohlasy FANG, J.Y. - LEE, G.Y. - CHYI, J.I. - HSU, C.P. - KANG, Y.W. - FANG, K.C. - KAO, W.L. - YAO, D.J. - HSU, C.H. - HUANG, Y.F. - CHEN, C.C. - LI, S.S. - YEH, J.A. - REN, F. - WANG, Y.L. In JOURNAL OF APPLIED PHYSICS. NOV 28 2013, vol. 114, no. 20. FANG, J.Y. - HSU, C.P. - KANG, Y.W. - FANG, K.C. - REN, F. - WANG, Y.L. In STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS) 55 -AND- LOW-DIMENSIONAL NANOSCALE ELECTRONIC AND PHOTONIC DEVICES 6. 2013, vol. 58, no. 8, p. 3-7. Senesky, D.G., So, H., Suria, A.J., Yalamarthy, A.S., Jain, S.R., Chapin, C.A., Chiamori, H.C., Hou, M. In Semiconductor-Based Sensors. World Scientific Publishing Co. 2016. ISBN: 978-981314673-0. P. 395-433 CHAPIN, C.A. - MILLER, R.A. - CHEN, R.Q. - DOWLING, K.M. - SENESKY, D.G. In 2017 19TH INTERNATIONAL CONFERENCE ON SOLID-STATE SENSORS, ACTUATORS AND MICROSYSTEMS (TRANSDUCERS). 2017, p. 786-789. HUANG, Y.S. - FENG, S.W. - WENG, Y.H. - CHEN, Y.S. - KUO, C.T. - LU, M.Y. - CHENG, Y.C. - HSIEH, Y.P. - WANG, H.C. In OPTICAL MATERIALS EXPRESS. FEB 1 2017, vol. 7, no. 2, p. 320-328. DOWLING, K.M. - SO, H. - TOOR, A. - CHAPIN, C.A. - SENESKY, D.G. In MICROELECTRONIC ENGINEERING. APR 5 2017, vol. 173, p. 54-57. CHAPIN, C.A. - MILLER, R.A. - DOWLING, K.M. - CHEN, R.Q. - SENESKY, D.G. In SENSORS AND ACTUATORS A-PHYSICAL. AUG 15 2017, vol. 263, p. 216-223. OH, H. - DAYEH, S.A. Physics-Based Device Models and Progress Review for Active Piezoelectric Semiconductor Devices. In SENSORS. JUL 2020, vol. 20, no. 14. SHIN, S. - KANG, B. - SO, H. Dual-surface lens with ring-shaped structures for optical tuning of GaN ultraviolet photodetectors at low temperature. In SENSORS AND ACTUATORS A-PHYSICAL. ISSN 0924-4247, MAR 1 2020, vol. 303. MOSER, Matthias - PRADHAN, Mamta - ALOMARI, Mohammed - BURGHARTZ, Joachim N. Model and Simulation of GaN-Based Pressure Sensors for High Temperature Applications-Part II: Sensor Design and Simulation. In IEEE SENSORS JOURNAL, 2021, vol. 21, no. 18, pp. 20176-20183. ISSN 1530-437X. Dostupné na: https://doi.org/10.1109/JSEN.2021.3096695. MOSER, Matthias - PRADHAN, Mamta - ALOMARI, Mohammed - BURGHARTZ, Joachim N. Model and Simulation of GaN-Based Pressure Sensors for High Temperature Applications-Part I: Physics Based Compact Modeling. In IEEE SENSORS JOURNAL, 2021, vol. 21, no. 18, pp. 20165-20175. ISSN 1530-437X. Dostupné na: https://doi.org/10.1109/JSEN.2021.3096206. AL-MAMUN, N.S. - WETHERINGTON, M. - WOLFE, D.E. - HAQUE, A. - REN, F. - PEARTON, S. Local strain modification effects on global properties of AlGaN/GaN high electron mobility transistors. In MICROELECTRONIC ENGINEERING. ISSN 0167-9317, JUN 1 2022, vol. 262. Dostupné na: https://doi.org/10.1016/j.mee.2022.111836. Kategória ADMB - Vedecké práce v zahraničných neimpaktovaných časopisoch registrovaných vo WOS Core Collection alebo SCOPUS Kategória (od 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Typ výstupu článok Rok vykazovania 2013 Registrované v WOS Registrované v SCOPUS 
článok
rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore N rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2012 2011 0.453 Q3
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