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Control of threshold voltage in GaN based metal–oxide–semiconductor high-electron mobility transistors towards the normally-off operation
Názov Control of threshold voltage in GaN based metal–oxide–semiconductor high-electron mobility transistors towards the normally-off operation Autor Ťapajna Milan 1977 SAVELEK - Elektrotechnický ústav SAV ORCID Spoluautori Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ORCID Zdroj.dok. Japanese Journal of Applied Physics. Vol. 52, (2013), 08JN08 Jazyk dok. eng - angličtina Druh dok. rozpis článkov z periodík (rbx) Ohlasy NAGY, L.- STOPJAKOVA, V. - SATKA, A. In 2014 24TH INTERNATIONAL CONFERENCE RADIOELEKTRONIKA (RADIOELEKTRONIKA 2014). 2014. SWAIN, R. - PANDA, J. - JENA, K. - LENKA, T.R. In JOURNAL OF COMPUTATIONAL ELECTRONICS. SEP 2015, vol. 14, no. 3, p. 754-761. SWAIN, R. - JENA, K. - LENKA, T.R. In SUPERLATTICES AND MICROSTRUCTURES. AUG 2015, vol. 84, p. 54-65. OSVALD, J. - STOKLAS, R. - KORDOS, P. In PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS. MAY 2015, vol. 252, no. 5, SI, p. 996-1000. KIM, J.J. - PARK, Y.R. - JANG, H.G. - NA, J.H. - LEE, H.S. - KO, S.C. - JUNG, D.Y. - LEE, H.S. - MUN, J.K. - LIM, J.H. - YANG, J.W. In JAPANESE JOURNAL OF APPLIED PHYSICS. MAR 2015, vol. 54, no. 3. JENA, K. - SWAIN, R. - LENKA, T.R. In INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS. JAN-FEB 2016, vol. 29, no. 1, p. 83-92. JENA, K. - SWAIN, R. - LENKA, T.R. In IET CIRCUITS DEVICES & SYSTEMS. SEP 2016, vol. 10, no. 5, p. 423-432. DU, J.F. - LIU, D. - BAI, Z.Y. - LUO, Q. - YU, Q. In JAPANESE JOURNAL OF APPLIED PHYSICS. MAY 2016, vol. 55, no. 5. SWAIN, R. - JENA, K. - LENKA, T.R. In PRAMANA-JOURNAL OF PHYSICS. JAN 2017, vol. 88, no. 1. LEE, J.M. - AHN, H.K. - JUNG, H.W. - SHIN, M.J. - LIM, J.W. In JOURNAL OF THE KOREAN PHYSICAL SOCIETY. SEP 2017, vol. 71, no. 6, p. 365-369. DU, J.F. - LIU, D. - LIU, Y. - BAI, Z.Y. - JIANG, Z.G. - LIU, Y. - YU, Q. In SUPERLATTICES AND MICROSTRUCTURES. NOV 2017, vol. 111, p. 656-664. HUANG, H.L. - SUN, Z.H. - CAO, Y.Q. - LI, F.Y. - ZHANG, F. - WEN, Z.X. - ZHANG, Z.F. - LIANG, Y.C. - HU, L.Z. Investigation of surface traps-induced current collapse phenomenon in AlGaN/GaN high electron mobility transistors with schottky gate structures. In JOURNAL OF PHYSICS D-APPLIED PHYSICS. AUG 30 2018, vol. 51, no. 34. TOKUDA, Hirokuni - HARADA, Sayaka - ASUBAR, Joel T. - KUZUHARA, Masaaki. Influence of reactive-ion-etching depth on interface properties in Al2O3/n-GaN MOS diodes. In JAPANESE JOURNAL OF APPLIED PHYSICS. ISSN 0021-4922, 2019, vol. 58, no. 10, pp. NAGY, L. - STOPJAKOVA, V. - SATKA, A. Design of InAlN/GaN Heterostructure-based Logic Cells. In 2015 IEEE 18TH INTERNATIONAL SYMPOSIUM ON DESIGN AND DIAGNOSTICS OF ELECTRONIC CIRCUITS & SYSTEMS (DDECS 2015). ISSN 2334-3133, 2015, p. 83-86. NAGY, L. - STOPJAKOVA, V. - SATKA, A. Design Of Digital Logic Cells On InAlN/GaN Heterostructure. In 2015 13TH INTERNATIONAL CONFERENCE ON EMERGING ELEARNING TECHNOLOGIES AND APPLICATIONS (ICETA). 2015, p. 277-282. BORDOLOI, S. - RAY, A. - TRIVEDI, G. Introspection Into Reliability Aspects in AlGaN/GaN HEMTs With Gate Geometry Modification. In IEEE ACCESS. ISSN 2169-3536, 2021, vol. 9, p. 99828-99841. NAUTIYAL, P. - PANDE, P. - KUNDU, V.S. - MOGHADAM, H.A. Trap-assisted degradation mechanisms in E-mode p-GaN power HEMT: A review. In MICROELECTRONICS RELIABILITY. ISSN 0026-2714, DEC 2022, vol. 139. Dostupné na: https://doi.org/10.1016/j.microrel.2022.114800. KHAN, A.N. - JENA, K. - ROUTRAY, S. - CHATTERJEE, G. RF/Analog and Linearity Performance Evaluation of Lattice-matched Ultra-thin AlGaN/GaN Gate Recessed MOSHEMT with Silicon Substrate. In SILICON. ISSN 1876-990X, SEP 2022, vol. 14, no. 14, p. 8599-8608. Dostupné na: https://doi.org/10.1007/s12633-021-01605-3. MENEGHINI, Matteo - CHOWDHURY, Srabanti - DERLUYN, Joff - MEDJDOUB, Farid - JI, Dong - CHUN, Jaeyi - KABOUCHE, Riad - DE SANTI, Carlo - ZANONI, Enrico - MENEGHESSO, Gaudenzio. GaN-Based Lateral and Vertical Devices. In Springer Handbooks, 2023-01-01, pp. 525-578. ISSN 25228692. Dostupné na: https://doi.org/10.1007/978-3-030-79827-7_15. Kategória ADCA - Vedecké práce v zahraničných karentovaných časopisoch impaktovaných Kategória (od 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Typ výstupu článok Rok vykazovania 2013 Registrované v WOS Registrované v SCOPUS Registrované v CCC DOI 10.7567/JJAP.52.08JN08 
článok
rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2013 2012 1.067 Q3 0.503
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