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Thickness dependence of the superconducting critical temperature in heavily doped Si:B epilayers
Názov Thickness dependence of the superconducting critical temperature in heavily doped Si:B epilayers Autor Grockowiak A. Spoluautori Klein Thierry Cercellier H. Lévy-Bertrand F. Blase X. Kačmarčík Jozef 1972- SAVEXFYZ - Ústav experimentálnej fyziky SAV ORCID Kociniewski T. Chiodi F. Débarre D. Prudon G. Dubois C. Marcenat Christophe Zdroj.dok. Physical Review B. Vol. 88, no. 6 (2013), art. no. 064508 Jazyk dok. eng - angličtina Druh dok. rozpis článkov z periodík (rbx) Ohlasy HEERA, V. - FIEDLER, J. - NAUMANN, M. - SKROTZKI, R. - KOELLING, S. - WILDE, L. - HERRMANNSDOERFER, T. - SKORUPA, W. - WOSNITZA, J. - HELM, M. Depth-resolved transport measurements and atom-probe tomography of heterogeneous, superconducting Ge:Ga films. In SUPERCONDUCTOR SCIENCE & TECHNOLOGY. ISSN 0953-2048, 2014, vol. 27, no. 5, art. no. 055025. KUO, Pai-Chia - CHEN, Chun-Wei - LEE, Ku-Pin - SHIUE, Jessie. Superconductivity observed in platinum-silicon interface. In APPLIED PHYSICS LETTERS. ISSN 0003-6951, 2014, vol. 104, no. 21, art. no. 211604. OVSYANNIKOV, Sergey V. - GOU, Huiyang - KARKIN, Alexander E. - SHCHENNIKOV, Vladimir V. - WIRTH, Richard - DMITRIEV, Vladimir - NAKAJIMA, Yoichi - DUBROVINSKAIA, Natalia - DUBROVINSKY, Leonid S. Bulk Silicon Crystals with the High Boron Content, Si1-xBx: Two Semiconductors Form an Unusual Metal. In CHEMISTRY OF MATERIALS. ISSN 0897-4756, 2014, vol. 26, no. 18, pp. 5274. BUSTARRET, E. Superconductivity in doped semiconductors. In PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS. ISSN 0921-4534, 2015, vol. 514, pp. 36-45. TRUONG, Nguyen Xuan - HAERTELT, Marko - JAEGER, Bertram K. A. - GEWINNER, Sandy - SCHOELLKOPF, Wieland - FIELICKE, Andre - DOPFER, Otto. Characterization of neutral boron-silicon clusters using infrared spectroscopy: The case of Si6B. In INTERNATIONAL JOURNAL OF MASS SPECTROMETRY. ISSN 1387-3806, 2016, vol. 395, pp. 1-6. WANG, Jingjing - SUN, Guoliang - KONG, Panlong - SUN, Weiguo - LU, Cheng - PENG, Feng - KUANG, Xiaoyu. Novel structural phases and the electrical properties of Si3B under high pressure. In PHYSICAL CHEMISTRY CHEMICAL PHYSICS. ISSN 1463-9076, 2017, vol. 19, no. 24, pp. 16206-16212. SANO, Kazuhiro - SEO, Mithuki - NAKAMURA, Kohji. Plasmon Effect on the Coulomb Pseudopotential ( )mu* in the McMillan Equation. In JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN. ISSN 0031-9015, 2019, vol. 88, no. 9. SARDASHTI, K. - NGUYEN, T. - HATEFIPOUR, M. - SARNEY, W. L. - YUAN, J. - MAYER, W. - KISSLINGER, K. - SHABANI, J. Tailoring superconducting phases observed in hyperdoped Si:Ga for cryogenic circuit applications. In APPLIED PHYSICS LETTERS, 2021, vol. 118, no. 7, pp. ISSN 0003-6951. Dostupné na: https://doi.org/10.1063/5.0039983. CHIODI, Francesca - DAUBRIAC, Richard - KERDILÈS, Sébastien. Laser ultra-doped silicon: Superconductivity and applications. In Laser Annealing Processes in Semiconductor Technology: Theory, Modeling and Applications in Nanoelectronics, 2021-01-01, pp. 357-400. Dostupné na: https://doi.org/10.1016/B978-0-12-820255-5.00009-X. TONG, Z.Y. - BU, M.X. - ZHANG, Y.Q. - YANG, D.R. - PI, X.D. Hyperdoped silicon: Processing, properties, and devices. In JOURNAL OF SEMICONDUCTORS. ISSN 1674-4926, SEP 1 2022, vol. 43, no. 9. Kategória ADCA - Vedecké práce v zahraničných karentovaných časopisoch impaktovaných Kategória (od 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Typ výstupu článok Rok vykazovania 2013 Registrované v WOS Registrované v SCOPUS Registrované v CCC DOI 10.1103/PhysRevB.88.064508 
článok
rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2013 2012 3.767 Q1 1.779 Q1
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