Počet záznamov: 1
Simulation study of interface traps and bulk traps in n++GaN/InAlN/AlN/GaN high electron mobility transistors
Názov Simulation study of interface traps and bulk traps in n++GaN/InAlN/AlN/GaN high electron mobility transistors Autor Molnár M. Spoluautori Donoval D. Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ORCID Marek J. Chvála A. Príbytný P. Mikolášek M. Rendek K. Palankovski V. Zdroj.dok. Applied Surface Science. Vol. 312, (2014), p. 157-161 Jazyk dok. eng - angličtina Druh dok. rozpis článkov z periodík (rbx) Ohlasy HUANG, H.L. - LIANG, Y.C. In SOLID-STATE ELECTRONICS. DEC 2015, vol. 114, p. 148-154. ADAK, S. - SWAIN, S.K. - RAHAMAN, H. - SARKAR, C.K. In SUPERLATTICES AND MICROSTRUCTURES. DEC 2016, vol. 100, p. 306-314. GE, Zhangfeng - YU, Chenhui - CHEN, Ming - LI, Lin - XU, Jintong. Research on dark current of AlGaN solar-blind ultraviolet avalanche photodetectors. In Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering. ISSN 10072276, 2018-09-25, 47, 9, pp.0920003 BABAYA, A. - BRI, S. - SAADI, A. Influence of AlN Interlayer on the Performance of InAlN/GaN HEMT. In 2018 INTERNATIONAL SYMPOSIUM ON ADVANCED ELECTRICAL AND COMMUNICATION TECHNOLOGIES (ISAECT). 2018. HUANG, H.L. - SUN, Z.H. - CAO, Y.Q. - LI, F.Y. - ZHANG, F. - WEN, Z.X. - ZHANG, Z.F. - LIANG, Y.C. - HU, L.Z. Investigation of surface traps-induced current collapse phenomenon in AlGaN/GaN high electron mobility transistors with schottky gate structures. In JOURNAL OF PHYSICS D-APPLIED PHYSICS. AUG 30 2018, vol. 51, no. 34. SUN, Shu Xiang - CHANG, Ming Ming - ZHONG, Ying Hui - LI, Yu Xiao - DING, Peng - JIN, Zhi. Defects effect on InAlAs/InGaAs high electron mobility transistors. In 2018 International Conference on Radiation Effects of Electronic Devices, ICREED 2018, 2018-05-01, pp.8905090 LI, X.S. - YANG, L.A. - MA, X.H. - HAO, Y. A new lattice-matched In0.17Al0.83N similar to GaN based heterostructure IMPATT diode for terahertz application. In SEMICONDUCTOR SCIENCE AND TECHNOLOGY. ISSN 0268-1242, NOV 2019, vol. 34, no. 11. LIU, H.H. - SUN, S.X. - ZHONG, Y.H. - LI, Y.X. - DING, P. - JIN, Z. - WEI, Z.C. Fiffects of different energy proton irradiation on DC characteristics of InP-based HEMTs. In 2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC). 2019. BOUSLAMA, M. - RAJA, P.V. - GAILLARD, F. - SOMMET, R. - NALLATAMBY, J.C. Investigation of electron trapping in AlGaN/GaN HEMT with Fe-doped buffer through DCT characterization and TCAD device simulations. In AIP ADVANCES. DEC 1 2021, vol. 11, no. 12. CARPENTER, M.G. - AAEN, P.H. - SNOWDEN, C.M. Quasi-2-D Physical Modeling of GaN Microwave HEMTs for RF Applications. In IEEE TRANSACTIONS ON ELECTRON DEVICES. ISSN 0018-9383, NOV 2022, vol. 69, no. 11, p. 6002-6009. Dostupné na: https://doi.org/10.1109/TED.2022.3209643. SUN, C. - DU, S. - GUO, Y. - HAO, T.T. - ZHAO, L.Y. - LIANG, R.R. - YE, H.T. - LI, J.J. - GU, C.Z. Vertical 3D diamond field effect transistors with nanoscale gate-all-around. In MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. ISSN 1369-8001, SEP 2022, vol. 148. Dostupné na: https://doi.org/10.1016/j.mssp.2022.106841. Kategória ADCA - Vedecké práce v zahraničných karentovaných časopisoch impaktovaných Kategória (od 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Typ výstupu článok Rok vykazovania 2014 Registrované v WOS Registrované v SCOPUS Registrované v CCC DOI 10.1016/j.apsusc.2014.04.078 
článok
rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2014 2013 2.538 Q1 0.965 Q1
Počet záznamov: 1