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Hot-electron-related degradation in InAlN/GaN high-electron-mobility transistors
Názov Hot-electron-related degradation in InAlN/GaN high-electron-mobility transistors Autor Ťapajna Milan 1977 SAVELEK - Elektrotechnický ústav SAV ORCID Spoluautori Killat N. Palankovski V. SAVELEK - Elektrotechnický ústav SAV Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV ORCID Čičo Karol SAVELEK - Elektrotechnický ústav SAV Carlin J.-F. Grandjean N. Kuball M. Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ORCID Zdroj.dok. IEEE Transactions on Electron Devices. Vol. 61, (2014), p. 2793-2801 Jazyk dok. eng - angličtina Druh dok. rozpis článkov z periodík (rbx) Ohlasy DOWNEY, B.P. - MEYER, D.J. - ROUSSOS, J.A. - KATZER, D.S. - ANCONA, M.G. - PAN, M. - GAO, X. In IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. DEC 2015, vol. 15, no. 4, p. 474-477. DYSON, A. - NAYLOR, D.R. - RIDLEY, B.K. In IEEE TRANSACTIONS ON ELECTRON DEVICES. NOV 2015, vol. 62, no. 11, p. 3613-3618. 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Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS Volume 2016-September, Published 2017, Pages 1-4 HILTON, A.M. - CAHILL, A.D. - HELLER, E.R. A Comparison of Electroluminescence Spectra From Plan View and Cross-Sectioned AlGaN/GaN Devices. In IEEE TRANSACTIONS ON ELECTRON DEVICES. JAN 2018, vol. 65, no. 1, p. 59-63. DUFFY, S.J. - BENBAKHTI, B. - KALNA, K. - BOUCHERTA, M. - ZHANG, W.D. - BOURZGUI, N.E. - SOLTANI, A. Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs. In IEEE ACCESS. 2018, vol. 6, p. 42721-42728. CHA, Suhyeong - HONG, Sung-Min. Theoretical Study of Electron Transport Properties in GaN-Based HEMTs Using a Deterministic Multi-Subband Boltzmann Transport Equation Solver. In IEEE TRANSACTIONS ON ELECTRON DEVICES. ISSN 0018-9383, 2019, vol. 66, no. 9, pp. 3740-3747. RAY, A. - BORDOLOI, S. - SARKAR, B. - AGARWAL, P. - TRIVEDI, G. Numerical Simulation of Enhanced-Reliability Filleted-Gate AlGaN/GaN HEMT. In JOURNAL OF ELECTRONIC MATERIALS. ISSN 0361-5235, MAR 2020, vol. 49, no. 3, p. 2018-2031. CHEN, Y.C. - SANYAL, I. - HU, T.Y. - JU, Y.H. - CHYI, J.I. The Influence of Superlattice Structure on the Dynamic Buffer Response of AlInN/GaN-on-Si HEMTs. In IEEE TRANSACTIONS ON NANOTECHNOLOGY. ISSN 1536-125X, 2020, vol. 19, p. 415-420. WANG, Y.Q. - GU, Y.T. - LU, X. - JIANG, H.X. - GUO, H.W. - CHEN, B.L. - LAU, K.M. - ZOU, X.B. Comparative Study on Dynamic Characteristics of GaN HEMT at 300K and 150K. In IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. ISSN 2168-6734, 2020, vol. 8, p. 850-856. KHADE, R.P. - SARKAR, S. - DASGUPTA, A. - DASGUPTA, N. Origin of the Kink Effect in AlInN/GaN High Electron-Mobility Transistor. In JOURNAL OF APPLIED PHYSICS. ISSN 0021-8979, NOV 28 2021, vol. 130, no. 20. 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In 2021 IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA), 2021, vol., no., pp. ISSN 1946-1550. Dostupné na: https://doi.org/10.1109/IPFA53173.2021.9617394. STRENAER, R. - GUHEL, Y. - GAQUIERE, C. - BOUDART, B. Trapping Effect in AlInN/GaN HEMTs: A Study Based on Photoionization and Pulsed Electrical Measurements. In IEEE TRANSACTIONS ON ELECTRON DEVICES. ISSN 0018-9383, NOV 2022, vol. 69, no. 11, p. 6010-6015. Dostupné na: https://doi.org/10.1109/TED.2022.3209636. LIN, J.H. - CIOU, F.M. - CHANG, T.C. - LIN, Y.S. - HSU, J.T. - JIN, F.Y. - CHANG, K.C. - KUO, T.T. - CHEN, K.H. - HUNG, Y.H. - ZHENG, Y.Z. Abnormal Threshold Voltage Degradation Under Semi-On State Stress in Si3N4/AlGaN/GaN-HEMT. In IEEE ELECTRON DEVICE LETTERS. ISSN 0741-3106, SEP 2022, vol. 43, no. 9, p. 1420-1423. Dostupné na: https://doi.org/10.1109/LED.2022.3190541. BORDOLOI, S. - RAY, A. - TRIVEDI, G. Access Region Stack Engineering for Mitigation of Degradation in AlGaN/GaN HEMTs With Field Plate. In IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. ISSN 1530-4388, MAR 2022, vol. 22, no. 1, p. 73-84. Dostupné na: https://doi.org/10.1109/TDMR.2022.3150714. Bordoloi, S., Ray, A., Barman, P., Trivedi, G.: Investigation of Electric Field Profile and associated parameters with Embedded Metal Layer in Field Plate AlGaN/GaN HEMTs In Journal of Physics: Conference Series 2236 (2022),012005 Kategória ADCA - Vedecké práce v zahraničných karentovaných časopisoch impaktovaných Kategória (od 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Typ výstupu článok Rok vykazovania 2014 Registrované v WOS Registrované v SCOPUS Registrované v CCC DOI 10.1109/TED.2014.2332235 
článok
rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2014 2013 2.358 Q1 1.411 Q1
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