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Ultra high hole mobilities in a pure strained Ge quantum well
Názov Ultra high hole mobilities in a pure strained Ge quantum well Autor Mironov O.A. Spoluautori Hassan A.H.A. Morris R.J.H. Dobbie A. Uhlarz M. Chrastina D. Hague J.P. Kiatgamolchai S. Beanland R. Gabáni Slavomír 1974- SAVEXFYZ - Ústav experimentálnej fyziky SAV RID RID ORCID Berkutov I.B. Helm M. Drachenko O. Myronov M. Leadley D.R. Zdroj.dok. Thin Solid Films. Vol. 557, (2014), p. 329-333 Jazyk dok. eng - angličtina Druh dok. rozpis článkov z periodík (rbx) Ohlasy CHENG, S.Y. - CHEN, K.T. - CHANG, S. T. Impact of strain on hole mobility in the inversion layer of PMOS device with SiGe alloy thin film. In THIN SOLID FILMS. ISSN 0040-6090, 2015, vol. 584, pp. 135. LAROCHE, D. - HUANG, S.H. - CHUANG, Y. - LI, J.Y. - LIU, C. W. - LU, T. M. Magneto-transport analysis of an ultra-low-density two-dimensional hole gas in an undoped strained Ge/SiGe heterostructure. In APPLIED PHYSICS LETTERS. ISSN 0003-6951, 2016, vol. 108, no. 23, art. no. 233504. SAWANO, Kentarou - XU, Xuejun - KONOSHIMA, Shiori - SHITARA, Nayuta - OHNO, Takeshi - MARUIZUMI, Takuya. Straining of Group IV Semiconductor Materials for Bandgap and Mobility Engineering. In HIGH PURITY AND HIGH MOBILITY SEMICONDUCTORS 14. ISSN 1938-5862, 2016, vol. 75, no. 4, pp. 191-197. ALAM, Md. Mahfuz - WAGATSUMA, Youya - OKADA, Kazuya - HOSHI, Yusuke - YAMADA, Michihiro - HAMAYA, Kohei - SAWANO, Kentarou. Critical thickness of strained Si1-xGex on Ge(111) and Ge-on-Si(111). In APPLIED PHYSICS EXPRESS. ISSN 1882-0778, 2019, vol. 12, no. 8, art. no. 081005. WAGATSUMA, Youya - ALAM, Md Mahfuz - OKADA, Kazuya - HOSHI, Yusuke - YAMADA, Michihiro - HAMAYA, Kohei - SAWANO, Kentarou. Crack formation in strained SiGe grown on Ge-on-Si (111) and its suppression by patterning substrates. In MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. ISSN 1369-8001, 2020, vol. 117. BEDELL, S. W. - HART, S. - BANGSARUNTIP, S. - DURFEE, C. - OTT, J. A. - HOPSTAKEN, M. - CARROLL, M. S. - GUMANN, P. Low-temperature growth of strained germanium quantum wells for high mobility applications. In ECS Transactions. ISSN 19386737, 2020-01-01, 98, 5, pp. 215-224. WAGATSUMA, Youya - MAHFUZ ALAM, Md - OKADA, Kazuya - HOSHI, Yusuke - YAMADA, Michihiro - HAMAYA, Kohei - SAWANO, Kentarou. Increased critical thickness for strained SiGe on Ge-on-Si(111). In ECS Transactions. ISSN 19386737, 2020-01-01, 98, 5, pp. 499-503. WAGATSUMA, Youya - ALAM, Md. Mahfuz - OKADA, Kazuya - YAMADA, Michihiro - HAMAYA, Kohei - SAWANO, Kentarou. A drastic increase in critical thickness for strained SiGe by growth on mesa-patterned Ge-on-Si. In APPLIED PHYSICS EXPRESS, 2021, vol. 14, no. 2, pp. ISSN 1882-0778. Dostupné na: https://doi.org/10.35848/1882-0786/abd4c5. WAGATSUMA, Y. - ALAM, M.M. - OKADA, K. - KANESAWA, R. - YAMADA, M. - HAMAYA, K. - SAWANO, K. Mechanism of crack formation in strained SiGe(111) layers. In JOURNAL OF CRYSTAL GROWTH. ISSN 0022-0248, JUL 1 2022, vol. 589. WAGATSUMA, Y. - KANESAWA, R. - ALAM, M.M. - OKADA, K. - INOUE, T. - YAMADA, M. - HAMAYA, K. - SAWANO, K. Significant reduction of crack propagation in the strained SiGe/Ge(111) induced by the local growth on the depth-controlled area patterning. In APPLIED PHYSICS EXPRESS. ISSN 1882-0778, JAN 1 2023, vol. 16, no. 1. Dostupné na: https://doi.org/10.35848/1882-0786/aca751. WEISSHAUPT, D. - FUNK, H.S. - OEHME, M. - BLOOS, D. - BERKMANN, F. - SEIDEL, L. - FISCHER, I.A. - SCHULZE, J. High mobility Ge 2DHG based MODFETs for low-temperature applications. In SEMICONDUCTOR SCIENCE AND TECHNOLOGY. ISSN 0268-1242, MAR 1 2023, vol. 38, no. 3. Dostupné na: https://doi.org/10.1088/1361-6641/acb22f. Kategória ADCA - Vedecké práce v zahraničných karentovaných časopisoch impaktovaných Kategória (od 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Typ výstupu článok Rok vykazovania 2014 Registrované v WOS Registrované v SCOPUS Registrované v CCC DOI 10.1016/j.tsf.2013.10.118 
článok
rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2014 2013 1.867 Q2 0.818 Q1
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