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Impact of GaN cap on charges in Al2O3/(GaN/)AlGaN/GaN metal-oxide-semiconductor heterostructures analyzed by means of capacitance measurements and simulations
Názov Impact of GaN cap on charges in Al2O3/(GaN/)AlGaN/GaN metal-oxide-semiconductor heterostructures analyzed by means of capacitance measurements and simulations Autor Ťapajna Milan 1977 SAVELEK - Elektrotechnický ústav SAV ORCID Spoluautori Jurkovič Michal SAVELEK - Elektrotechnický ústav SAV Válik Lukáš 1990 SAVELEK - Elektrotechnický ústav SAV Haščík Štefan 1956 SAVELEK - Elektrotechnický ústav SAV Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV ORCID Brunner F. Cho E.-M. Hashizume T. Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ORCID Zdroj.dok. Journal of Applied Physics. Vol. 116, (2014), 104501 Jazyk dok. eng - angličtina Druh dok. rozpis článkov z periodík (rbx) Ohlasy QIN, X.Y. - WALLACE, R.M. In APPLIED PHYSICS LETTERS. AUG 24 2015, vol. 107, no. 8. HE, Y.L. - LI, P.X. - WANG, C. - LI, X.D. - ZHAO, S.L. - MI, M.H. - PEI, J.Q. - ZHANG, J.C. - MA, X.H. - HAO, Y. In APPLIED PHYSICS LETTERS. AUG 10 2015, vol. 107, no. 6. 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článok
rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2014 2013 2.185 Q2 1.165 Q1
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