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Self-aligned normally-off metal-oxide-semiconductor n+++GaN/InAlN/GaN high-electron mobility transistors
Názov Self-aligned normally-off metal-oxide-semiconductor n+++GaN/InAlN/GaN high-electron mobility transistors Autor Blaho Michal 1983 SAVELEK - Elektrotechnický ústav SAV Spoluautori Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV ORCID Haščík Štefan 1956 SAVELEK - Elektrotechnický ústav SAV Jurkovič Michal SAVELEK - Elektrotechnický ústav SAV Ťapajna Milan 1977 SAVELEK - Elektrotechnický ústav SAV ORCID Fröhlich Karol 1954 SAVELEK - Elektrotechnický ústav SAV ORCID Dérer Ján 1948 SAVELEK - Elektrotechnický ústav SAV Carlin J.-F. Grandjouan G. Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ORCID Zdroj.dok. Physica Status Solidi A. Vol. 212 (2015), p. 1086-1090 Jazyk dok. eng - angličtina Druh dok. rozpis článkov z periodík (rbx) Ohlasy YEH, P.C. - LIN, Y.W. - HUANG, Y.L. - HUNG, J.H. - LIN, B.R. - YANG, L. - WU, C.H. - WU, T.K. - WU, C.H. - PENG, L.H. In APPLIED PHYSICS EXPRESS. AUG 2015, vol. 8, no. 8. DUTTA, G. - DASGUPTA, N. - DASGUPTA, A. In IEEE TRANSACTIONS ON ELECTRON DEVICES. APR 2016, vol. 63, no. 4, p. 1450-1458. FREEDSMAN, J.J. - HAMADA, T. - MIYOSHI, M. - EGAWA, T. In IEEE ELECTRON DEVICE LETTERS. APR 2017, vol. 38, no. 4, p. 497-500. LE, S.P. - NGUYEN, D.D. - SUZUKI, T. Insulator-semiconductor interface fixed charges in AlGaN/GaN metal-insulator-semiconductor devices with Al2O3 or AlTiO gate dielectrics. In JOURNAL OF APPLIED PHYSICS. JAN 21 2018, vol. 123, no. 3. SATO, T. - URYU, K. - OKAYASU, J. - KIMISHIMA, M. - SUZUKI, T. Suppression of drain-induced barrier lowering by double-recess overlapped gate structure in normally-off AlGaN-GaN MOSFETs. In APPLIED PHYSICS LETTERS. AUG 6 2018, vol. 113, no. 6. MENEGHINI, M. - TAJALLI, A. - MOENS, P. - BANERJEE, A. - ZANONI, E. - MENEGHESSO, G. Trapping phenomena and degradation mechanisms in GaN-based power HEMTs. In MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. MAY 2018, vol. 78, p. 118-126. NGUYEN, D.D. - SUZUKI, T.K. Interface charge engineering in AlTiO/AlGaN/GaN metal-insulator-semiconductor devices. In JOURNAL OF APPLIED PHYSICS. ISSN 0021-8979, MAR 7 2020, vol. 127, no. 9. NGUYEN, D.D. - ISODA, T. - DENG, Y.C. - SUZUKI, T.K. Normally-off operations in partially-gate-recessed AlTiO/AlGaN/GaN field-effect transistors based on interface charge engineering. In JOURNAL OF APPLIED PHYSICS. ISSN 0021-8979, JUL 7 2021, vol. 130, no. 1. ZHANG, W.H. - LIU, X. - FU, L.Y. - HUANG, R. - ZHAO, S.L. - ZHANG, J.C. - ZHANG, J.F. - HAO, Y. Investigation of normally-off GaN-based p-channel and n-channel heterojunction field-effect transistors for monolithic integration. In RESULTS IN PHYSICS. ISSN 2211-3797, MAY 2021, vol. 24. LEE, D. - AN, J.Y. - LEE, C.H. - BONG, K.W. - KIM, J. Normally Off WSe2 Nanosheet-Based Field-Effect Transistors with Self-Aligned Contact Doping. In ACS APPLIED NANO MATERIALS. NOV 17 2022, vol. 5, no. 12, p. 18462-18468. Dostupné na: https://doi.org/10.1021/acsanm.2c04283. Kategória ADCA - Vedecké práce v zahraničných karentovaných časopisoch impaktovaných Kategória (od 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Typ výstupu článok Rok vykazovania 2015 Registrované v WOS Registrované v SCOPUS Registrované v CCC DOI 10.1002/pssa.201431588 
článok
rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2015 2014 1.616 Q2 0.688 Q1
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