Počet záznamov: 1
Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors
Názov Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors Autor Ťapajna Milan 1977 SAVELEK - Elektrotechnický ústav SAV ORCID Spoluautori Hilt O. Bahat-Treidel E. Würfl H.-J. Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ORCID Zdroj.dok. Applied Physics Letters. Vol. 107 (2015), 193506 Jazyk dok. eng - angličtina Druh dok. rozpis článkov z periodík (rbx) Ohlasy ZHANG, K.X. - LIAO, M.Y. - IMURA, M. - NABATAME, T. - OHI, A. - SUMIYA, M. - KOIDE, Y. - SANG, L.W. In APPLIED PHYSICS EXPRESS. DEC 2016, vol. 9, no. 12. ROSSETTO, I. - MENEGHINI, M. - RIZZATO, V. - RUZZARIN, M. - FAVARON, A. - STOFFELS, S. - VAN HOVE, M. - POSTHUMA, N. - WU, T.L. - MARCON, D. - DECOUTERE, S. - MENEGHESSO, G. - ZANONI, E. In MICROELECTRONICS RELIABILITY. SEP 2016, vol. 64, SI, p. 547-551. DONG, B. - LIN, J. - WANG, N. - JIANG, L.L. - LIU, Z.D. - HU, X.Y. - CHENG, K. - YU, H.Y. In AIP ADVANCES. SEP 2016, vol. 6, no. 9. MENEGHINI, M. - ROSSETTO, I. - RIZZATO, V. - STOFFELS, S. - VAN HOVE, M. - POSTHUMA, N. - WU, T.L. - MARCON, D. - DECOUTERE, S. - MENEGHESSO, G. - ZANONI, E. In ELECTRONICS. JUN 2016, vol. 5, no. 2. DE SANTI, C. - MENEGHINI, M. - BUFFOLO, M. - MENEGHESSO, G. - ZANONI, E. In IEEE ELECTRON DEVICE LETTERS. MAY 2016, vol. 37, no. 5, p. 611-614. MAREK, J. - STUCHLIKOVA, L. - JAGELKA, M. - CHVALA, A. - PRIBYTNY, P. - DONOVAL, M. - DONOVAL, D. In 2016 11TH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES & MICROSYSTEMS (ASDAM). 2016, p. 173-176. DE SANTI, C. - MENEGHINI, M. - RENSO, N. - BUFFOLO, M. - TRIVELLIN, N. - MURA, G. - VANZI, M. - MIGLIORI, A. - MORANDI, V. - MENEGHESSO, G. - ZANONI, E. In LIGHT-EMITTING DIODES: MATERIALS, DEVICES, AND APPLICATIONS FOR SOLID STATE LIGHTING XXI. 2017, vol. 10124. MENEGHINI, M. - ROSSETTO, I. - DE SANTI, C. - RAMPAZZO, F. - TAJALLI, A. - BARBATO, A. - RUZZARIN, M. - BORGA, M. - CANATO, E. - ZANONI, E. - MENEGHESSO, G. In 2017 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). 2017. EFTHYMIOU, L. - LONGOBARDI, G. - CAMUSO, G. - CHIEN, T. - CHEN, M. - UDREA, F. In APPLIED PHYSICS LETTERS. MAR 20 2017, vol. 110, no. 12. XIE, R.L. - WANG, H.X. - TANG, G.F. - YANG, X. - CHEN, K.J. In IEEE TRANSACTIONS ON POWER ELECTRONICS. AUG 2017, vol. 32, no. 8, p. 6416-6433. BAI, Z.Y. - DU, J.F. - JIANG, Z.G. - YU, Q. In JOURNAL OF COMPUTATIONAL ELECTRONICS. SEP 2017, vol. 16, no. 3, p. 748-755. ROSSETTO, I. - MENEGHINI, M. - CANATO, E. - BARBATO, M. - STOFFELS, S. - POSTHUMA, N. - DECOUTERE, S. - TALLARICO, A.N. - MENEGHESSO, G. - ZANONI, E. In MICROELECTRONICS RELIABILITY. SEP 2017, vol. 76, SI, p. 298-303. SAITO, W. - NAKA, T. In MICROELECTRONICS RELIABILITY. SEP 2017, vol. 76, SI, p. 309-313. KIM, K.S. In JAPANESE JOURNAL OF APPLIED PHYSICS. SEP 2017, vol. 56, no. 9. ZHONG, Y.Z. - YU, Z. - GAO, H.W. - DAI, S.J. - HE, J.L. - FENG, M.X. - QIAN, S. - ZHANG, J.J. - ZHAO, Y.F. - AN, D.S. - HUI, Y. In APPLIED SURFACE SCIENCE. OCT 31 2017, vol. 420, p. 817-824. Dong, B., Lin, J., Wang, N., Jiang, L.-L., Liu, Z.-D., Cheng, K., Yu, H.-Y. 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings 2017, Article number 7998648, Pages 1053-1055 MAREK, J., KOSA, A., BENKO, P., DROBNY, J., STUCHLIKOVA, L. Impact of high voltage switching on electrical performance in power p GaN HEMT. In SURFINT - SREN V : 5th Conference on Progress in applied surface, interface and thin film science. Extended abstract book. Florence, Italy. November 20-23, 2017. Bratislava : Comenius University, 2017, s. 86-87. ISBN 978-80-223-4411-1. BISI, Davide - ROSSETTO, Isabella - MENEGHINI, Matteo - MENEGHESSO, Gaudenzio - ZANONI, Enrico. Reliability in III-nitride devices. In Handbook of GaN Semiconductor Materials and Devices, 2017-01-01, pp. 367-430. DE SANTI, C. - MENEGHINI, M. - MENEGHESSO, G. - ZANONI, E. Chip-Level Degradation of InGaN-Based Optoelectronic Devices. In SOLID STATE LIGHTING RELIABILITY, PT 2: COMPONENTS TO SYSTEMS. 2018, vol. 3, p. 15-48. SANG, L.W. - REN, B. - LIAO, M.Y. - KOIDE, Y. - SUMIYA, M. Suppression in the electrical hysteresis by using CaF2 dielectric layer for p-GaN MIS capacitors. In JOURNAL OF APPLIED PHYSICS. APR 28 2018, vol. 123, no. 16. TANG, X. - LI, B.K. - MOGHADAM, H.A. - TANNER, P. - HAN, J.S. - DIMITRIJEV, S. Mechanism of Threshold Voltage Shift in p-GaN Gate AlGaN/GaN Transistors. In IEEE ELECTRON DEVICE LETTERS. AUG 2018, vol. 39, no. 8, p. 1145-1148. PU, T.F. - HUANG, Q. - ZHANG, T. - HUANG, J. - LI, X.M. - LI, L.A. - LI, X.B. - WANG, L. - AO, J.P. Normally-off AlGaN/GaN heterostructure junction field-effect transistors with blocking layers. In SUPERLATTICES AND MICROSTRUCTURES. AUG 2018, vol. 120, p. 448-453. CHIU, H.C. - CHANG, Y.S. - LI, B.H. - WANG, H.C. - KAO, H.L. - CHIEN, F.T. - HU, C.W. - XUAN, R. High Uniformity Normally-OFF p-GaN Gate HEMT Using Self-Terminated Digital Etching Technique. In IEEE TRANSACTIONS ON ELECTRON DEVICES. NOV 2018, vol. 65, no. 11, p. 4820-4825. BAI, Z.Y. - DU, J.F. - WANG, H. - LI, X.Y. - YU, Q. Simulation design of high Baliga's figure of merit normally-off P-GaN gate AlGaN/GaN heterostructure field effect transistors with junction field plates. In SUPERLATTICES AND MICROSTRUCTURES. NOV 2018, vol. 123, p. 257-266. STOCKMAN, A. - MASIN, F. - MENEGHINI, M. - ZANONI, E. - MENEGHESSO, G. - BAKEROOT, B. - MOENS, P. Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors. In IEEE TRANSACTIONS ON ELECTRON DEVICES. DEC 2018, vol. 65, no. 12, p. 5365-5372. MENEGHESSO, Gaudenzio - MENEGHINI, Matteo - DE SANTI, Carlo - ZANONI, Enrico. GaN-based lateral and vertical devices: Physical mechanisms limiting stability and reliability. In 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, 2019-03-01, pp. 68-70. FRANKE, Jörg - BÄUMLER, Christian - KRETZSCHMAR, Danny - LUTZ, Josef. Advanced temperature estimation in low Rinfds,on/inf p-GaN HEMT devices for performing power cycling tests. In PCIM Europe Conference Proceedings, 2019-01-01, pp. 473-478. ZHONG, Yaozong - SU, Shuai - CHEN, Xin - ZHOU, Yu - HE, Junlei - GAO, Hongwei - ZHAN, Xiaoning - GUO, Xiaolu - LIU, Jianxun - SUN, Qian - YANG, Hui. Normally-off HEMTs With Regrown p-GaN Gate and Low-Pressure Chemical Vapor Deposition SiNx Passivation by Using an AIN Pre-Layer. In IEEE ELECTRON DEVICE LETTERS. ISSN 0741-3106, 2019, vol. 40, no. 9, pp. 1495-1498. MASIN, F. - MENEGHINI, M. - CANATO, E. - DE SANTI, C. - STOCKMAN, A. - ZANONI, E. - MOENS, P. - MENEGHESSO, G. Positive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress. In APPLIED PHYSICS LETTERS. ISSN 0003-6951, 2019, vol. 115, no. 5, pp. HE, Jiabei - WEI, Jin - YANG, Song - WANG, Yuru - ZHONG, Kailun - CHEN, Kevin J. Frequency- and Temperature-Dependent Gate Reliability of Schottky-Type p-GaN Gate HEMTs. In IEEE TRANSACTIONS ON ELECTRON DEVICES. ISSN 0018-9383, 2019, vol. 66, no. 8, pp. 3453-3458. MATSUURA, Haruka - ONUMA, Takeyoshi - SUMIYA, Masatomo - YAMAGUCHI, Tomohiro - REN, Bing - LIAO, Meiyong - HONDA, Tohru - SANG, Liwen. MOCVD Growth and Investigation of InGaN/GaN Heterostructure Grown on AlGaN/GaN-on-Si Template. In APPLIED SCIENCES-BASEL, 2019, vol. 9, no. 9, pp. LI, Baikui - TANG, Xi - LI, Hui - MOGHADAM, Hamid Amini - ZHANG, Zhaofu - HAN, Jisheng - NAM-TRUNG NGUYEN - DIMITRIJEV, Sima - WANG, Jiannong. Impact of carrier injections on the threshold voltage in p-GaN gate AIGaN/GaN power HEMTs. In APPLIED PHYSICS EXPRESS. ISSN 1882-0778, 2019, vol. 12, no. 6, pp. XIE, Ruiliang - YANG, Xu - XU, Guangzhao - WEI, Jin - WANG, Yuru - WANG, Hanxing - TIAN, Mofan - ZHANG, Feng - CHEN, Wenjie - WANG, Laili - CHEN, Kevin J. Switching Transient Analysis for Normally-OFF GaN Transistor With p-GaN Gate in a Phase-Leg Circuit. In IEEE TRANSACTIONS ON POWER ELECTRONICS. ISSN 0885-8993, 2019, vol. 34, no. 4, pp. 3711-3728. WANG, F.Z. - CHEN, W.J. - LI, X. - SUN, R.Z. - XU, X.R. - XIN, Y.J. - WANG, Z.H. - SHI, Y.J. - XIA, Y. - LIU, C. - ZHOU, J.J. - ZHOU, Q. - ZHANG, B. Charge storage impact on input capacitance in p-GaN gate AlGaN/GaN power high-electron-mobility transistors. In JOURNAL OF PHYSICS D-APPLIED PHYSICS. ISSN 0022-3727, JUL 22 2020, vol. 53, no. 30. HE, J.B. - WEI, J. - LI, Y. - ZHENG, Z.Y. - YANG, S. - HUANG, B.L. - CHEN, K.J. Characterization and analysis of low-temperature time-to-failure behavior in forward-biased Schottky-type p-GaN gate HEMTs. In APPLIED PHYSICS LETTERS. ISSN 0003-6951, JUN 1 2020, vol. 116, no. 22. KATO, D. - KAJIWARA, Y. - MUKAI, A. - ONO, H. - SHINDOME, A. - TAJIMA, J. - HIKOSAKA, T. - KURAGUCHI, M. - NUNOUE, S. Suppression of short-channel effects in normally-off GaN MOSFETs with deep recessed-gate structures. In JAPANESE JOURNAL OF APPLIED PHYSICS. ISSN 0021-4922, APR 1 2020, vol. 59, SG. KIM, K. - KIM, J. - GONG, J.R. - LIU, D. - MA, Z.Q. Metal-Al2O3-GaN capacitors with an ultraviolet/ozone plasma-treated interface. In JAPANESE JOURNAL OF APPLIED PHYSICS. ISSN 0021-4922, MAR 1 2020, vol. 59, no. 3. SUN, R.Z. - CHEN, X.H. - LIU, C. - CHEN, W.J. - ZHANG, B. Degradation mechanism of Schottky P-GaN gate stack in GaN power devices under neutron irradiation. In APPLIED PHYSICS LETTERS. ISSN 0003-6951, SEP 27 2021, vol. 119, no. 13. ZHANG, L. - ZHENG, Z.Y. - YANG, S. - SONG, W.J. - FENG, S.R. - CHEN, K.J. Characterization of GaON as a surface reinforcement layer of p-GaN in Schottky-type p-GaN gate HEMTs. In APPLIED PHYSICS LETTERS. ISSN 0003-6951, AUG 2 2021, vol. 119, no. 5. XU, H. - WEI, J. - XIE, R.L. - ZHENG, Z.Y. - HE, J.B. - CHEN, K.J. Incorporating the Dynamic Threshold Voltage Into the SPICE Model of Schottky-Type p-GaN Gate Power HEMTs. In IEEE TRANSACTIONS ON POWER ELECTRONICS. ISSN 0885-8993, MAY 2021, vol. 36, no. 5, p. 5904-5914. ZHONG, Y.Z. - SU, S. - CHEN, X. - ZHOU, Y. - GAO, H.W. - ZHAN, X.N. - GUO, X.L. - ZHANG, S.M. - SUN, Q. - YANG, H. Gate Reliability and Its Degradation Mechanism in the Normally OFF High-Electron-Mobility Transistors With Regrown p-GaN Gate. In IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS. ISSN 2168-6777, JUN 2021, vol. 9, no. 3, p. 3715-3724. MENEGHINI, Matteo - DE SANTI, Carlo - ABID, Idriss - BUFFOLO, Matteo - CIONI, Marcello - KHADAR, Riyaz Abdul - NELA, Luca - ZAGNI, Nicolo - CHINI, Alessandro - MEDJDOUB, Farid - MENEGHESSO, Gaudenzio - VERZELLESI, Giovanni - ZANONI, Enrico - MATIOLI, Elison. GaN-based power devices: Physics, reliability, and perspectives. In JOURNAL OF APPLIED PHYSICS, 2021, vol. 130, no. 18, pp. ISSN 0021-8979. Dostupné na: https://doi.org/10.1063/5.0061354. WANG, P. - JIANG, Y.Z. - GU, Y.T. - HUANG, M.L. - HUANG, W. - CHEN, S.Y. - XIAO, Z.Q. - ZOU, X.B. - QIU, Y.W. - ZHOU, X.J. - ZHOU, J.J. - ZHANG, D.W. Investigation of trapping effects in Schottky lightly doped P-GaN gate stack under gamma-ray irradiation. In APPLIED PHYSICS LETTERS. ISSN 0003-6951, OCT 3 2022, vol. 121, no. 14. Dostupné na: https://doi.org/10.1063/5.0094090. SARKAR, A. - HADDARA, Y.M. Modeling of forward gate leakage current for normally off pGaN/AlGaN/GaN HEMTs. In SOLID-STATE ELECTRONICS. ISSN 0038-1101, OCT 2022, vol. 196. Dostupné na: https://doi.org/10.1016/j.sse.2022.108420. CHAO, X. - TANG, C.K. - TAN, J.J. - CHEN, L. - ZHU, H. - SUN, Q.Q. - ZHANG, D.W. Analysis of iV/isubTH/sub Degradation and Recovery Behaviors of p-GaN Gate HEMTs Under Forward Gate Bias. In IEEE TRANSACTIONS ON ELECTRON DEVICES. ISSN 0018-9383, JUN 2023, vol. 70, no. 6, SI, p. 2970-2974. Dostupné na: https://doi.org/10.1109/TED.2023.3263819. WANG, X.H. - ZHENG, X.F. - WANG, B.C. - WANG, Y.Z. - YUE, S.Z. - ZHU, T. - MAO, W. - ZHANG, H. - MA, X.H. - HAO, Y. Investigation on the threshold voltage instability mechanism of p-GaN gate AlGaN/GaN HEMTs under high-temperature reverse bias stress. In APPLIED PHYSICS LETTERS. ISSN 0003-6951, FEB 27 2023, vol. 122, no. 9. Dostupné na: https://doi.org/10.1063/5.0132187. Kategória ADCA - Vedecké práce v zahraničných karentovaných časopisoch impaktovaných Kategória (od 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Typ výstupu článok Rok vykazovania 2015 Registrované v WOS Registrované v CCC DOI 10.1063/1.4935223 
článok
rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2015 2014 3.302 Q1 1.861 Q1
Počet záznamov: 1