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Gate reliability investigation in normally-off p-type-gan cap/AlGaN/GaN HEMTs under forward bias stress
Názov Gate reliability investigation in normally-off p-type-gan cap/AlGaN/GaN HEMTs under forward bias stress Autor Ťapajna Milan 1977 SAVELEK - Elektrotechnický ústav SAV ORCID Spoluautori Hilt O. Bahat-Treidel E. Würfl H.-J. Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ORCID Zdroj.dok. IEEE Electron Device Letters. Vol. 37 (2016), p. 385 - 388 Jazyk dok. eng - angličtina Druh dok. rozpis článkov z periodík (rbx) Ohlasy ROSSETTO, I. - MENEGHINI, M. - RIZZATO, V. - RUZZARIN, M. - FAVARON, A. - STOFFELS, S. - VAN HOVE, M. - POSTHUMA, N. - WU, T.L. - MARCON, D. - DECOUTERE, S. - MENEGHESSO, G. - ZANONI, E. In MICROELECTRONICS RELIABILITY. SEP 2016, vol. 64, SI, p. 547-551. BAHL, S.R. - RUIZ, D. - LEE, D.S. In 2016 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). 2016. TALLARICO, A.N. - STOFFELS, S. - MAGNONE, P. - POSTHUMA, N. - SANGIORGI, E. - DECOUTERE, S. - FIEGNA, C. In IEEE ELECTRON DEVICE LETTERS. JAN 2017, vol. 38, no. 1, p. 99-102. 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File name Access Size Downloaded Type License Gate Reliability Investigation in Normally-Off p.pdf Neprístupný/archív 751.9 KB 0 Publisher's version rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2016 2015 2.528 Q1 1.607 Q1
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