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3D resistive RAM cell design for high-density storage class memory - a review
Názov 3D resistive RAM cell design for high-density storage class memory - a review Autor Hudec Boris ORCID Spoluautori Hsu C.-W. Wang I-T. Lai W.-L. Chang C.-C. Wang T. Fröhlich Karol 1954 SAVELEK - Elektrotechnický ústav SAV ORCID Ho C.-H. Lin C.-H. Hou T.-H. Zdroj.dok. Science China Information Sciences. Vol. 59 (2016), art. no. 061403 Jazyk dok. eng - angličtina Druh dok. rozpis článkov z periodík (rbx) Ohlasy AUSSEN, S. - HARDTDEGEN, A. - SKAJA, K. - HOFFMANN-EIFERT, S. In ATOMIC LAYER DEPOSITION APPLICATIONS 13. 2017, vol. 80, no. 3, p. 87-95. ZHU, D.B. - LI, Y. - SHEN, W.S. - ZHOU, Z. - LIU, L.F. - ZHANG, X. In JOURNAL OF SEMICONDUCTORS. JUL 2017, vol. 38, no. 7. ZHANG, J.Y. - GUO, M.Y. - WU, C.T. - CHEN, Y.Y. Toward multi-programmed workloads with different memory footprints: a self-adaptive last level cache scheduling scheme. In SCIENCE CHINA-INFORMATION SCIENCES. JAN 2018, vol. 61, no. 1. PARVEEN, F. - HE, Z.Z. - ANGIZI, S. - FAN, D.L. HieIM: Highly Flexible In-Memory Computing using STT MRAM. In 2018 23RD ASIA AND SOUTH PACIFIC DESIGN AUTOMATION CONFERENCE (ASP-DAC). 2018, p. 361-366. PANDA, D. - SAHU, P.P. - TSENG, T.Y. A Collective Study on Modeling and Simulation of Resistive Random Access Memory. In NANOSCALE RESEARCH LETTERS. JAN 10 2018, vol. 13. TING, Y.H. - CHEN, J.Y. - HUANG, C.W. - HUANG, T.K. - HSIEH, C.Y. - WU, W.W. Observation of Resistive Switching Behavior in Crossbar Core-Shell Ni/NiO Nanowires Memristor. In SMALL. FEB 8 2018, vol. 14, no. 6. CHEN, Q.Y. - LIN, M. - FANG, Y.C. - WANG, Z.W. - YANG, Y.C. - XU, J.T. - CAI, Y.M. - HUANG, R. Integration of biocompatible organic resistive memory and photoresistor for wearable image sensing application. In SCIENCE CHINA-INFORMATION SCIENCES. JUN 2018, vol. 61, no. 6. ZHAO, X.L. - WANG, R. - XIAO, X.H. - LU, C.Y. - WU, F.C. - CAO, R.R. - JIANG, C.Z. - LIU, Q. Flexible cation-based threshold selector for resistive switching memory integration. In SCIENCE CHINA-INFORMATION SCIENCES. JUN 2018, vol. 61, no. 6. FANG, Y.C. - WANG, Z.W. - CHENG, C.D. - YU, Z.Z. - ZHANG, T. - YANG, Y.C. - CAI, Y.M. - HUANG, R. Investigation of NbOx-based volatile switching device with self-rectifying characteristics. In SCIENCE CHINA-INFORMATION SCIENCES. ISSN 1674-733X, DEC 2019, vol. 62, no. 12. KIM, M. - LEE, C. - SONG, Y. - KOO, S.M. - OH, J.M. - WOO, J. - LEE, D. Energy-Storing Hybrid 3D Vertical Memory Structure. In IEEE ELECTRON DEVICE LETTERS. ISSN 0741-3106, OCT 2019, vol. 40, no. 10, p. 1622-1625. ZHOU, F. - WU, S. - JIA, Y.C. - GAO, X. - JIN, H. - LIAO, X.F. - YUAN, P.P. VAIL: A Victim-Aware Cache Policy to improve NVM Lifetime for hybrid memory system. In PARALLEL COMPUTING. ISSN 0167-8191, SEP 2019, vol. 87, p. 70-76. WANG, C.N. - FENG, D. - TONG, W. - LIU, J.N. - LI, Z. - CHANG, J.Y. - ZHANG, Y. - WU, B. - XU, J. - ZHAO, W. - LI, Y.L. - REN, R.X. Cross-point Resistive Memory: Nonideal Properties and Solutions. In ACM TRANSACTIONS ON DESIGN AUTOMATION OF ELECTRONIC SYSTEMS. ISSN 1084-4309, JUL 2019, vol. 24, no. 4. CREMERS, V. - PUURUNEN, R.L. - DENDOOVEN, J. Conformality in atomic layer deposition: Current status overview of analysis and modelling. In APPLIED PHYSICS REVIEWS. ISSN 1931-9401, JUN 2019, vol. 6, no. 2. CHEN, Q.Y. - WANG, Z.W. - YU, M.X. - FANG, Y.C. - YU, Z.Z. - YANG, Y.C. - CAI, Y.M. - HUANG, R. Thermal effect in ultra-high density 3D vertical and horizontal RRAM array. In PHYSICA SCRIPTA. ISSN 0031-8949, APR 2019, vol. 94, no. 4. HAN, R.Z. - HUANG, P. - ZHAO, Y.D. - CUI, X.L. - LIU, X.Y. - KANG, J.F. Efficient evaluation model including interconnect resistance effect for large scale RRAM crossbar array matrix computing. In SCIENCE CHINA-INFORMATION SCIENCES. ISSN 1674-733X, FEB 2019, vol. 62, no. 2. BELAY, Y.A. - CABRINI, A. - TORELLI, G. Selector-Memory Device Voltage Compatibility Considerations in 1S1R Crosspoint Arrays. In 2019 15TH CONFERENCE ON PHD RESEARCH IN MICROELECTRONICS AND ELECTRONICS (PRIME). 2019, p. 29-32. CAMBOU, B. - HELY, D. - ASSIRI, S. Cryptography with Analog Scheme Using Memristors. In ACM JOURNAL ON EMERGING TECHNOLOGIES IN COMPUTING SYSTEMS. ISSN 1550-4832, OCT 2020, vol. 16, no. 4, SI. SHI, L.Y. - ZHENG, G.H. - TIAN, B.B. - DKHIL, B. - DUAN, C.G. Research progress on solutions to the sneak path issue in memristor crossbar arrays. In NANOSCALE ADVANCES. ISSN 2516-0230, MAY 1 2020, vol. 2, no. 5, p. 1811-1827. WANG, D.W. - ZHAO, W.S. - CHEN, W.C. - XIE, H. - YIN, W.Y. Fully coupled electrothermal simulation of resistive random access memory (RRAM) array. In SCIENCE CHINA-INFORMATION SCIENCES. ISSN 1674-733X, APR 15 2020, vol. 63, no. 8. JIN, H. - LI, Z.W. - LIU, H.K. - LIAO, X.F. - ZHANG, Y. Hotspot-Aware Hybrid Memory Management for In-Memory Key-Value Stores. In IEEE TRANSACTIONS ON PARALLEL AND DISTRIBUTED SYSTEMS. ISSN 1045-9219, APR 1 2020, vol. 31, no. 4, p. 779-792. ZHANG, Z.H. - WANG, Z.W. - SHI, T. - BI, C. - RAO, F. - CAI, Y.M. - LIU, Q. - WU, H.Q. - ZHOU, P. Memory materials and devices: From concept to application. In INFOMAT. MAR 2020, vol. 2, no. 2, p. 261-290. LI, W.Q. - SONG, X.Y. - ZHAO, X.L. - ZHANG, X.G. - CHEN, R. - ZHANG, X.L. - JIANG, C.Z. - HE, J. - XIAO, X.H. Design of wafer-scale uniform Au nanotip array by ion irradiation for enhanced single conductive filament resistive switching. In NANO ENERGY. ISSN 2211-2855, JAN 2020, vol. 67. LIU, Z.C. - WANG, L. Applications of Phase Change Materials in Electrical Regime From Conventional Storage Memory to Novel Neuromorphic Computing. In IEEE ACCESS. ISSN 2169-3536, 2020, vol. 8, p. 76471-76499. CHEN, Q.Y. - WANG, Z.W. - LIN, M. - QI, X. - YU, Z.Z. - WU, L.D. - BAO, L. - LING, Y.T. - QIN, Y.B. - CAI, Y.M. - HUANG, R. Homogeneous 3D Vertical Integration of Parylene-C Based Organic Flexible Resistive Memory on Standard CMOS Platform. In ADVANCED ELECTRONIC MATERIALS. ISSN 2199-160X, FEB 2021, vol. 7, no. 2. LIN, P. - XIA, Q.F. Three-dimensional hybrid circuits: the future of neuromorphic computing hardware. In NANO EXPRESS. SEP 1 2021, vol. 2, no. 3. AN, H.Y. - AN, Q.Y. - YI, Y. Realizing Behavior Level Associative Memory Learning Through Three-Dimensional Memristor-Based Neuromorphic Circuits. In IEEE TRANSACTIONS ON EMERGING TOPICS IN COMPUTATIONAL INTELLIGENCE. ISSN 2471-285X, AUG 2021, vol. 5, no. 4, p. 668-678. DONGALE, T.D. - KAMBLE, G.U. - KANG, D.Y. - KUNDALE, S.S. - AN, H.M. - KIM, T.G. Recent Progress in Selector and Self-Rectifying Devices for Resistive Random-Access Memory Application. In PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS. ISSN 1862-6254, SEP 2021, vol. 15, no. 9. CAMBOU, B. - TELESCA, D. - ASSIRI, S. - GARRETT, M. - JAIN, S. - PARTRIDGE, M. TRNGs from Pre-Formed ReRAM Arrays. In CRYPTOGRAPHY. MAR 2021, vol. 5, no. 1. FAHMY, G.A. - ZORKANY, M. Design of a Memristor-Based Digital to Analog Converter (DAC). In ELECTRONICS. MAR 2021, vol. 10, no. 5. UPADHYAY, Navnidhi K. - BLUM, Thomas - MAKSYMOVYCH, Petro - LAVRIK, Nickolay V. - DAVILA, Noraica - KATINE, Jordan A. - IEVLEV, A. V. - CHI, Miaofang - XIA, Qiangfei - YANG, J. Joshua. Engineering Tunneling Selector to Achieve High Non-linearity for 1S1R Integration. In Frontiers in Nanotechnology, 2021-04-15, 3, pp. Dostupné na: https://doi.org/10.3389/fnano.2021.656026. CAMBOU, Bertrand - CHEN, Ying Chen. Tamper Sensitive Ternary ReRAM-Based PUFs. In Lecture Notes in Networks and Systems, 2021-01-01, 285, pp. 1020-1040. ISSN 23673370. Dostupné na: https://doi.org/10.1007/978-3-030-80129-8_67. LI, Yang - CHRISTENSEN, Dennis Valbjørn - SANNA, Simone - ESPOSITO, Vincenzo - PRYDS, Nini. The effect of external stimuli on the performance of memristive oxides. In Metal Oxides for Non-volatile Memory: Materials, Technology and Applications, 2022-01-01, pp. 361-398. Dostupné na: https://doi.org/10.1016/B978-0-12-814629-3.00011-8. LUO, J.D. - ZHAO, Z.Y. - HUANG, X.C. - WU, Y.H. - LIU, Z. - WEI, A.X. - LIU, J. - ZHAO, Y. - XIAO, Z.M. - YANG, X. Phase-dependent memristive behaviors in FAPbI(3)-based memristors. In MATERIALS TODAY COMMUNICATIONS. DEC 2022, vol. 33. Dostupné na: https://doi.org/10.1016/j.mtcomm.2022.104186. RUDRAPAL, K. - BHATTACHARYA, G. - ADYAM, V. - CHAUDHURI, A.R. Forming-Free, Self-Compliance, Bipolar Multi-Level Resistive Switching in WO3-x Based MIM Device. In ADVANCED ELECTRONIC MATERIALS. ISSN 2199-160X, NOV 2022, vol. 8, no. 11. Dostupné na: https://doi.org/10.1002/aelm.202200250. ZHU, L. - YANG, G.L. - DING, W.J. - CAO, Y.Q. - LI, W.M. - LI, A.D. Growth behavior of Ir metal formed by atomic layer deposition in the nanopores of anodic aluminum oxide. In DALTON TRANSACTIONS. ISSN 1477-9226, JUN 27 2022, vol. 51, no. 25, p. 9664-9672. Dostupné na: https://doi.org/10.1039/d2dt01358d. Kategória ADCA - Vedecké práce v zahraničných karentovaných časopisoch impaktovaných Kategória (od 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Typ výstupu článok Rok vykazovania 2016 Registrované v WOS Registrované v SCOPUS Registrované v CCC DOI 10.1007/s11432-016-5566-0 
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Názov súboru Prístup Veľkosť Stiahnuté Typ Licence 3D resistive RAM cell design for high-density storage class memory - a review.pdf Neprístupný/archív 3.8 MB 2 Vydavateľská verzia rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2016 2015 0.885 Q3 0.357 Q2
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