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Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 by atomic layer deposition: leakage current and density of states reduction
Názov Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 by atomic layer deposition: leakage current and density of states reduction Autor Stoklas Roman 1981 SAVELEK - Elektrotechnický ústav SAV ORCID Spoluautori Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV ORCID Blaho Michal 1983 SAVELEK - Elektrotechnický ústav SAV Fröhlich Karol 1954 SAVELEK - Elektrotechnický ústav SAV ORCID Novák Jozef 1951 SAVELEK - Elektrotechnický ústav SAV Matys M. Yatabe Z. Kordoš Peter Hashizume T. Zdroj.dok. Semiconductor Science and Technology. Vol. 32 (2017), no. 045018 Jazyk dok. eng - angličtina Druh dok. rozpis článkov z periodík (rbx) Ohlasy LIANG, X.C. - WANG, C.C. - LIANG, J. - LIU, C. - PEI, Y.L. In SEMICONDUCTOR SCIENCE AND TECHNOLOGY. SEP 2017, vol. 32, no. 9. YOON, S.J. - SEONG, T.Y. Interfacial reactions to form high-barrier-height ITO-based Schottky contacts on p-type GaN using a Ti interlayer. In JOURNAL OF ALLOYS AND COMPOUNDS. APR 15 2018, vol. 741, p. 999-1005. WANG, C. - HE, Q. - WU, J. - ZHENG, X.F. - HE, Y.L. - WANG, X. - TIAN, Y. - MAO, W. - MA, X.H. - ZHANG, J.C. - HAO, Y. Study of the Temperature Dependence of AlGaN/GaN HEMTs with Oxygen Plasma Treatment. In PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. JUL 24 2018, vol. 215, no. 14. BAZAKA, K. - BARANOV, O. - CVELBAR, U. - PODGORNIK, B. - WANG, Y. - HUANG, S. - XU, L. - LIM, J.W.M. - LEVCHENKO, I. - XU, S. Oxygen plasmas: a sharp chisel and handy trowel for nanofabrication. In NANOSCALE. OCT 7 2018, vol. 10, no. 37, p. 17494-17511. CAI, Yutao - WANG, Yang - CUI, Miao - LIU, Wen - WEN, Huiqing - ZHAO, Cezhou - MITROVIC, Ivona Z. - TAYLOR, Stephen - CHALKER, Paul R. Effect of High-k Passivation Layer on Electrical Properties of GaN Metal-Insulator-Semiconductor Devices. In 17TH IEEE INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT 2019), 2019, vol., no., pp. GULSEREN, Melisa Ekin - KURT, Gokhan - GHOBADI, Turkan Gamze Ulusoy - GHOBADI, Amir - SALKIM, Gurur - OZTURK, Mustafa - BUTUN, Bayram - OZBAY, Ekmel. Investigation of angstrom-thick aluminium oxide passivation layers to improve the gate lag performance of GaN HEMTs. In MATERIALS RESEARCH EXPRESS. ISSN 2053-1591, 2019, vol. 6, no. 9, pp. KURT, Gokhan - GULSEREN, Melisa Ekin - GHOBADI, Turkan Gamze Ulusoy - URAL, Sertac - KAYAL, Omer Ahmet - OZTURK, Mustafa - BUTUN, Bayram - KABAK, Mehmet - OZBAY, Ekmel. Normally-off AlGaN/GaN MIS-HEMT with low gate leakage current using a hydrofluoric acid pre-treatment. In SOLID-STATE ELECTRONICS. ISSN 0038-1101, 2019, vol. 158, no., pp. 22-27. XU, Ke - VICKERS, Evan T. - RAO, Longshi - LINDLEY, Sarah A. - ALLEN, A'Lester C. - LUO, Binbin - LI, Xueming - ZHANG, Jin Zhong. Synergistic Surface Passivation of CH3NH3PbBr3 Perovskite Quantum Dots with Phosphonic Acid and (3-Aminopropyl)triethoxysilane. In CHEMISTRY-A EUROPEAN JOURNAL. ISSN 0947-6539, 2019, vol. 25, no. 19, pp. 5014-5021. Abo-Kahla, D.A.M.: Long-lived quantum coherence in a two-level semiconductor quantum dot In Pramana - Journal of Physics 94 (2020), 65 ABO-KAHLA, D.A.M. Long-lived quantum coherence and nonlinear properties of a two-dimensional semiconductor quantum well. In JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS. ISSN 0740-3224, NOV 1 2020, vol. 37, no. 11, p. A96-A109. BISWAS, M. - KUMAR, R. - CHATTERJEE, A. - WU, Y.P. - MI, Z.T. - BHATTACHARYA, P. - PAL, S.K. - CHAKRABARTI, S. Effects of rapid thermal annealing in InGaN/GaN quantum disk-in-GaN nanowire arrays. In JOURNAL OF LUMINESCENCE. ISSN 0022-2313, JUN 2020, vol. 222. CAI, Y.T. - LIU, W. - CUI, M. - SUN, R.Z. - LIANG, Y.C. - WEN, H.Q. - YANG, L. - SUPARDAN, S.N. - MITROVIC, I.Z. - TAYLOR, S. - CHALKER, P.R. - ZHAO, C.Z. Effect of surface treatment on electrical properties of GaN metal-insulator-semiconductor devices with Al2O3 gate dielectric. In JAPANESE JOURNAL OF APPLIED PHYSICS. ISSN 0021-4922, APR 1 2020, vol. 59, no. 4. CAI, Y.T. - WANG, Y. - LIANG, Y. - ZHANG, Y.L. - LIU, W. - WEN, H.Q. - MITROVIC, I.Z. - ZHAO, C.Z. Effect of High-k Passivation Layer on High Voltage Properties of GaN Metal-Insulator-Semiconductor Devices. In IEEE ACCESS. ISSN 2169-3536, 2020, vol. 8, p. 95642-95649. CHOI, Seok - ANSARI, Abu Saad - YUN, Hee Ju - KIM, Hogyoung - SHONG, Bonggeun - CHOI, Byung Joon. Growth of Al-rich AlGaN thin films by purely thermal atomic layer deposition. In JOURNAL OF ALLOYS AND COMPOUNDS, 2021, vol. 854, no., pp. ISSN 0925-8388. Dostupné na: https://doi.org/10.1016/j.jallcom.2020.157186. AKAZAWA, Masamichi - WU, Encheng - SAKURAI, Hideki - BOCKOWSKI, Michal - NARITA, Tetsuo - KACHI, Tetsu. X-ray photoelectron spectroscopy study on effects of ultra-high-pressure annealing on surface of Mg-ion-implanted GaN. In JAPANESE JOURNAL OF APPLIED PHYSICS, 2021, vol. 60, no. 3, pp. ISSN 0021-4922. Dostupné na: https://doi.org/10.35848/1347-4065/abe609. IZSAK, Tibor - VANKO, Gabriel - BABCENKO, Oleg - VINCZE, Andrej - VOJS, Marian - ZATKO, Bohumir - KROMKA, Alexander. Influence of SiON interlayer on the diamond/GaN heterostructures studied by Raman and SIMS measurements. In MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2021, vol. 273, no., pp. ISSN 0921-5107. Dostupné na: https://doi.org/10.1016/j.mseb.2021.115434. SCHILIRO, E. - FIORENZA, P. - GRECO, G. - MONFORTE, F. - CONDORELLI, G.G. - ROCCAFORTE, F. - GIANNAZZO, F. - LO NIGRO, R. Early Growth Stages of Aluminum Oxide (Al2O3) Insulating Layers by Thermal- and Plasma-Enhanced Atomic Layer Deposition on AlGaN/GaN Heterostructures. In ACS APPLIED ELECTRONIC MATERIALS. JAN 25 2022, vol. 4, no. 1, p. 406-415. Dostupné na: https://doi.org/10.1021/acsaelm.1c01059. Kategória ADCA - Vedecké práce v zahraničných karentovaných časopisoch impaktovaných Kategória (od 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Typ výstupu článok Rok vykazovania 2017 Registrované v WOS Registrované v SCOPUS Registrované v CCC DOI 10.1088/1361-6641/aa5fcb 
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Názov súboru Prístup Veľkosť Stiahnuté Typ Licence Influence of oxygen-plasma treatment on AlGaNGaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2.pdf Neprístupný/archív 1.5 MB 1 Vydavateľská verzia rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2017 2016 2.305 Q2 0.793 Q1
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