Počet záznamov: 1
State of the art on gate insulation and surface passivation for GaN-based power HEMTs
Názov State of the art on gate insulation and surface passivation for GaN-based power HEMTs Autor Hashizume T. Spoluautori Nishiguchi K. Kaneki S. Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ORCID Yatabe Z. Zdroj.dok. Materials science in semiconductor processing. Vol. 78 (2018), p. 85-95 Jazyk dok. eng - angličtina Druh dok. rozpis článkov z periodík (rbx) Ohlasy FIORENZA, Patrick - GRECO, Giuseppe - SCHILIRO, Emanuela - IUCOLANO, Ferdinando - NIGRO, Raffaella Lo - ROCCAFORTE, Fabrizio. Determining oxide trapped charges in Al inf2/inf O inf3/inf insulating films on recessed AlGaN/GaN heterostructures by gate capacitance transients measurements. In Japanese Journal of Applied Physics. ISSN 00214922, 2018-05-01, 57, 5, pp.050307 ROCCAFORTE, F. - FIORENZA, P. - GRECO, G. - LO NIGRO, R. - GIANNAZZO, F. - IUCOLANO, F. - SAGGIO, M. Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices. In MICROELECTRONIC ENGINEERING. FEB 5 2018, vol. 187, p. 66-77. GAO, Z. - ROMERO, M.F. - CALLE, F. Thermal and Electrical Stability Assessment of AlGaN/GaN Metal-Oxide-Semiconductor High-Electron Mobility Transistors (MOS-HEMTs) With HfO2 Gate Dielectric. In IEEE TRANSACTIONS ON ELECTRON DEVICES. AUG 2018, vol. 65, no. 8, p. 3142-3148. HENTSCHEL, R. - GARTNER, J. - WACHOWIAK, A. - GROSSER, A. - MIKOLAJICK, T. - SCHMULT, S. Surface morphology of AlGaN/GaN heterostructures grown on bulk GaN by MBE. In JOURNAL OF CRYSTAL GROWTH. OCT 15 2018, vol. 500, p. 1-4. LIU, Z.K. - CHEN, D.B. - WAN, L.J. - LI, G.Q. Micron-Scale Annealing for Ohmic Contact Formation Applied in GaN HEMT Gate-First Technology. In IEEE ELECTRON DEVICE LETTERS. DEC 2018, vol. 39, no. 12, p. 1896-1899. ZENG, F.M. - AN, J.X. - ZHOU, G.N. - LI, W.M. - WANG, H. - DUAN, T.L. - JIANG, L.L. - YU, H.Y. A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability. In ELECTRONICS. DEC 2018, vol. 7, no. 12. ROCCAFORTE, F. - FIORENZA, P. - LO NIGRO, R. - GIANNAZZO, F. - GRECO, G. Physics and technology of gallium nitride materials for power electronics. In RIVISTA DEL NUOVO CIMENTO. DEC 2018, vol. 41, no. 12, p. 625-681. TOUATI, Z. - HAMAIZIA, Z. - MESSAI, Z. Study of AlGaN/GaN MOS-HEMTs with TiO2 gate dielectric and regrown source/drain. In JOURNAL OF NEW TECHNOLOGY AND MATERIALS. DEC 2018, vol. 8, no. 2, p. 16-23. ROCCAFORTE, F. - GRECO, G. - FIORENZA, P. Processing issues in SiC and GaN power devices technology: the cases of 4H-SiC planar MOSFET and recessed hybrid GaN MISHEMT. In CAS 2018 PROCEEDINGS: 2018 INTERNATIONAL SEMICONDUCTOR CONFERENCE. 2018, p. 7-16. SUSANTO, Iwan - TSAI, Chi Yu - RAHMIATI, Tia - FACHRUDDIN - YU, Ing Song. Morphology and surface stability of GaN thin film grown on the short growth time by Plasma Assisted Molecular Beam Epitaxy. In Journal of Physics: Conference Series. ISSN 17426588, 2019-12-18, 1364, 1, pp. 012067 KUMAR, S. - RAWAL, D.S. - MALIK, H.K. - SANWAL, R. - KHAN, S.A. - VINAYAK, S. Memory effect in silicon nitride deposition using ICPCVD technique. In JOURNAL OF THEORETICAL AND APPLIED PHYSICS. ISSN 2251-7227, DEC 2019, vol. 13, no. 4, p. 299-304. SUSANTO, I. - TSAI, C.Y. - FACHRUDDIN - RAHMIATI, T. - HO, Y.T. - TSAI, P.Y. - YU, I.S. The influence of 2D MoS2 layers on the growth of GaN films by plasma-assisted molecular beam epitaxy. In APPLIED SURFACE SCIENCE. ISSN 0169-4332, DEC 1 2019, vol. 496. DEL ALAMO, J.A. - LEE, E.S. Stability and Reliability of Lateral GaN Power Field-Effect Transistors. In IEEE TRANSACTIONS ON ELECTRON DEVICES. ISSN 0018-9383, NOV 2019, vol. 66, no. 11, p. 4578-4590. KUBO, T. - EGAWA, T. Electron-spin-resonance studies of AlGaN/GaN MIS-HEMT structures with Al2O3 fabricated by atomic layer deposition. In PHYSICA B-CONDENSED MATTER. ISSN 0921-4526, OCT 15 2019, vol. 571, p. 210-212. AJAYAN, J. - NIRMAL, D. - MOHANKUMAR, P. - KURIYAN, D. - FLETCHER, A.S.A. - ARIVAZHAGAN, L. - KUMAR, B.S. GaAs metamorphic high electron mobility transistors for future deep space-biomedical-millitary and communication system applications: A review. In MICROELECTRONICS JOURNAL. ISSN 0026-2692, OCT 2019, vol. 92. HWANG, I.T. - JANG, K.W. - KIM, H.J. - LEE, S.H. - LIM, J.W. - YANG, J.M. - KWON, H.S. - KIM, H.S. Analysis of DC Characteristics in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with Variation of Gate Dielectric Layer Composition by Considering Self-Heating Effect. In APPLIED SCIENCES-BASEL. SEP 1 2019, vol. 9, no. 17. GULSEREN, M.E. - KURT, G. - GHOBADI, T.G.U. - GHOBADI, A. - SALKIM, G. - OZTURK, M. - BUTUN, B. - OZBAY, E. Investigation of angstrom-thick aluminium oxide passivation layers to improve the gate lag performance of GaN HEMTs. In MATERIALS RESEARCH EXPRESS. ISSN 2053-1591, SEP 2019, vol. 6, no. 9. HOSOI, T. - WATANABE, K. - NOZAKI, M. - YAMADA, T. - SHIMURA, T. - WATANABE, H. Mobility enhancement in recessed-gate AlGaN/GaN MOS-HFETs using an AION gate insulator. In JAPANESE JOURNAL OF APPLIED PHYSICS. ISSN 0021-4922, JUN 1 2019, vol. 58, C. NOZAKI, M. - TERASHIMA, D. - YAMADA, T. - YOSHIGOE, A. - HOSOI, T. - SHIMURA, T. - WATANABE, H. Comparative study on thermal robustness of GaN and AlGaN/GaN MOS devices with thin oxide interlayers. In JAPANESE JOURNAL OF APPLIED PHYSICS. ISSN 0021-4922, JUN 1 2019, vol. 58, C. HARTMANN, J. - CLAVERO, I.M. - NICOLAI, L. - MARGENFELD, C. - SPENDE, H. - LEDIG, J. - ZHOU, H. - STEIB, F. - JAROS, A. - AVRAMESCU, A. - STRASSBURG, M. - TRAMPERT, A. - WEHMANN, H.H. - LUGAUER, H.J. - VOSS, T. - WAAG, A. 3D GaN Fins as a Versatile Platform for a-Plane-Based Devices. In PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS. ISSN 0370-1972, APR 2019, vol. 256, no. 4, SI. LIN, Y.S. - GOA, W.H. High-temperature stability of improved AlGaN/AlN/GaN HEMT with pre-gate metal treatment. In IEICE ELECTRONICS EXPRESS. ISSN 1349-2543, MAR 10 2019, vol. 16, no. 5. KUMAR, S. - PRATIYUSH, A.S. - BIN DOLMANAN, S. - TAN, H.R. - TRIPATHY, S. - MURALIDHARAN, R. - NATH, D.N. Optically Coupled Electrically Isolated, Monolithically Integrated Switch Using AlxGa1-xN/GaN High Electron Mobility Transistor Structures on Si (111). In ACS APPLIED ELECTRONIC MATERIALS. ISSN 2637-6113, MAR 2019, vol. 1, no. 3, p. 340-345. SABAGHI, M. ANALYSIS OF SILICON CARBIDE POLYMORPHS SUBSTRATES EFFECT ON PERFORMANCES OF ALGAN/GAN DOUBLE QUANTUM WELL HEMTS. In HOLOS. ISSN 1518-1634, 2019, vol. 35, no. 2. HORNG, R.H. - TSENG, M.C. - WUU, D.S. Surface Treatments on the Characteristics of Metal-Oxide Semiconductor Capacitors. In CRYSTALS. ISSN 2073-4352, JAN 2019, vol. 9, no. 1. CHUN, J.Y. - LI, W.W. - AGARWAL, A. - CHOWDHURY, S. Schottky Junction Vertical Channel GaN Static Induction Transistor with a Sub-Micrometer Fin Width. In ADVANCED ELECTRONIC MATERIALS. ISSN 2199-160X, JAN 2019, vol. 5, no. 1. NABATAME, T. - MAEDA, E. - INOUE, M. - YUGE, K. - HIROSE, M. - SHIOZAKI, K. - IKEDA, N. - OHISHI, T. - OHI, A. Hafnium silicate gate dielectrics in GaN metal oxide semiconductor capacitors. In APPLIED PHYSICS EXPRESS. ISSN 1882-0778, JAN 1 2019, vol. 12, no. 1. SCHILIRO, E. - FIORENZA, P. - BONGIORNO, C. - SPINELLA, C. - DI FRANCO, S. - GRECO, G. - LO NIGRO, R. - ROCCAFORTE, F. Correlating electron trapping and structural defects in Al2O3 thin films deposited by plasma enhanced atomic layer deposition. In AIP ADVANCES. DEC 1 2020, vol. 10, no. 12. TAPAJNA, M. Current Understanding of Bias-Temperature Instabilities in GaN MIS Transistors for Power Switching Applications. In CRYSTALS. ISSN 2073-4352, DEC 2020, vol. 10, no. 12. MATYS, M. - DOMANOWSKA, A. - MICHALEWICZ, A. - ADAMOWICZ, B. - KACHI, T. All-optical transistor using deep-level defects in nitride semiconductors for room temperature optical computing. In AIP ADVANCES. OCT 1 2020, vol. 10, no. 10. ZHANG, Y.H. - PALACIOS, T. (Ultra)Wide-Bandgap Vertical Power FinFETs. In IEEE TRANSACTIONS ON ELECTRON DEVICES. ISSN 0018-9383, OCT 2020, vol. 67, no. 10, p. 3960-3971. ZHAO, Y.P. - WANG, C. - ZHENG, X.F. - MA, X.H. - LIU, K. - LI, A. - HE, Y.L. - HAO, Y. Comparative study on characteristics of Si-based AlGaN/GaN recessed MIS-HEMTs with HfO(2)and Al(2)O(3)gate insulators*. In CHINESE PHYSICS B. ISSN 1674-1056, JUL 2020, vol. 29, no. 8. KOTANI, J. - YAITA, J. - YAMADA, A. - NAKAMURA, N. - WATANABE, K. Impact of n-GaN cap layer doping on the gate leakage behavior in AlGaN/GaN HEMTs grown on Si and GaN substrates. In JOURNAL OF APPLIED PHYSICS. ISSN 0021-8979, JUN 21 2020, vol. 127, no. 23. HEUKEN, L. - OTTAVIANI, A. - FAHLE, D. - ZWEIPFENNIG, T. - LUEKENS, G. - KALISCH, H. - VESCAN, A. - HEUKEN, M. - BURGHARTZ, J.N. Limitations for Reliable Operation at Elevated Temperatures of Al2O3/AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Grown by Metal-Organic Chemical Vapor Deposition on Silicon Substrate. In PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. ISSN 1862-6300, APR 2020, vol. 217, no. 7, SI. KHRAPOVITSKAYA, Y.V. - CHERNYKH, M.Y. - EZUBCHENKO, I.S. - GRISHCHENKO, Y.V. - MAYBORODA, I.O. - CHERNYKH, I.A. - ANDREEV, A.A. - PERMINOV, P.A. - TSOTSORIN, A.N. - CHERNYKH, M.I. - ZANAVESKIN, M.L. - SEMEYKIN, I.V. Powerful Gallium Nitride Microwave Transistors on Silicon Substrates. In NANOTECHNOLOGIES IN RUSSIA. ISSN 1995-0780, MAR 2020, vol. 15, no. 2, p. 169-174. UEDONO, A. - UENO, W. - YAMADA, T. - HOSOI, T. - EGGER, W. - KOSCHINE, T. - HUGENSCHMIDT, C. - DICKMANN, M. - WATANABE, H. Voids and vacancy-type defects in SiO2/GaN structures probed by monoenergetic positron beams. In JOURNAL OF APPLIED PHYSICS. ISSN 0021-8979, FEB 7 2020, vol. 127, no. 5. LIN, C.Y. - PUTCHA, V. - ALIAN, A. - WALDRON, N. - LINTEN, D. - COLLAERT, N. - CHANG, T.C. On the impact of Gate field-plate length and barrier layer thickness on TDDB lifetime of GaN-on-Si MISHEMT devices for RF/5G/mm-Wave applications. In 2020 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP (IIRW). ISSN 1930-8841, 2020, p. 24-30. CHOI, U. - KIM, H.S. - LEE, K. - JUNG, D. - KWAK, T. - JANG, T. - NAM, Y. - SO, B. - KANG, M.J. - SEO, K.S. - HAN, M. - CHOI, S. - LEE, S. - CHA, H.Y. - NAM, O. Direct Current and Radio Frequency Characterizations of AlGaN/AlN/GaN/AlN Double-Heterostructure High-Electron Mobility Transistor (DH-HEMT) on Sapphire. In PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. ISSN 1862-6300, APR 2020, vol. 217, no. 7, SI. BOŽANIĆ, Mladen - SINHA, Saurabh. Device Scaling: Going from “Micro-” to “Nano-” Electronics. In Lecture Notes in Electrical Engineering. ISSN 18761100, 2020-01-01, 658, pp. 1-40. OFIARE, A. - TAKING, S. - KARAMI, K. - DHONGDE, A. - AL-KHALIDI, A. - WASIGE, E. Investigation of Plasma Induced Etch Damage/Changes in AlGaN/GaN HEMTs. In INTERNATIONAL JOURNAL OF NANOELECTRONICS AND MATERIALS. ISSN 1985-5761, DEC 2021, vol. 14, SI, p. 29-36. MIKULICS, M. - KORDOS, P. - GREGUSOVA, D. - GAZI, S. - NOVAK, J. - SOFER, Z. - MAYER, J. - HARDTDEGEN, H. Local increase in compressive strain (GaN) in gate recessed AlGaN/GaN MISHFET structures induced by an amorphous AlN dielectric layer. In SEMICONDUCTOR SCIENCE AND TECHNOLOGY. ISSN 0268-1242, SEP 2021, vol. 36, no. 9. TURUT, A. - KARABULUT, A. - EFEOGLU, H. Effect of the Al2O3 interfacial layer thickness on the measurement temperature-induced I-V characteristics in Au/Ti/Al2O3/n-GaAs structures. In JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS. ISSN 0957-4522, SEP 2021, vol. 32, no. 17, p. 22680-22688. GUPTA, S.D. - JOSHI, V. - CHAUDHURI, R.R. - SHRIVASTAVA, M. Observations regarding deep-level states causing p-type doping in AlTiO gate and positive threshold voltage shift in AlGaN/GaN high electron mobility transistors. In JOURNAL OF APPLIED PHYSICS. ISSN 0021-8979, JUL 7 2021, vol. 130, no. 1. SEOK, O. - HA, M.W. Effects of incomplete ionization on forward current-voltage characteristics of p-type diamond Schottky barrier diodes based on numerical simulation. In JAPANESE JOURNAL OF APPLIED PHYSICS. ISSN 0021-4922, JUN 1 2021, vol. 60, no. SC. SUSANTO, I. - TSAI, C.Y. - HO, Y.T. - TSAI, P.Y. - YU, I.S. Temperature Effect of van der Waals Epitaxial GaN Films on Pulse-Laser-Deposited 2D MoS2 Layer. In NANOMATERIALS. JUN 2021, vol. 11, no. 6. ZHANG, Y.H. - ZUBAIR, A. - LIU, Z.H. - XIAO, M. - PEROZEK, J. - MA, Y.W. - PALACIOS, T. GaN FinFETs and trigate devices for power and RF applications: review and perspective. In SEMICONDUCTOR SCIENCE AND TECHNOLOGY. ISSN 0268-1242, MAY 2021, vol. 36, no. 5. LAUKKANEN, P. - PUNKKINEN, M.P.J. - KUZMIN, M. - KOKKO, K. - LANG, J. - WALLACE, R.M. Passivation of III-V surfaces with crystalline oxidation. In APPLIED PHYSICS REVIEWS. ISSN 1931-9401, MAR 2021, vol. 8, no. 1. MATYS, M. - ISHIDA, T. - NAM, K.P. - SAKURAI, H. - NARITA, T. - UESUGI, T. - BOCKOWSKI, M. - SUDA, J. - KACHI, T. Mg-implanted bevel edge termination structure for GaN power device applications. In APPLIED PHYSICS LETTERS. ISSN 0003-6951, MAR 1 2021, vol. 118, no. 9. HE, J.Q. - CHENG, W.C. - WANG, Q. - CHENG, K. - YU, H.Y. - CHAI, Y. Recent Advances in GaN-Based Power HEMT Devices. In ADVANCED ELECTRONIC MATERIALS. ISSN 2199-160X, APR 2021, vol. 7, no. 4. NELA, L. - ERINE, C. - OROPALLO, M.V. - MATIOLI, E. Figures-of-Merit of Lateral GaN Power Devices: Modeling and Comparison of HEMTs and PSJs. In IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. ISSN 2168-6734, 2021, vol. 9, p. 1066-1075. ELANGOVAN, Surya - CHENG, Stone - YAO, Jia Hao - CHANG, Edward Yi. VinfTH/inf& Ginfm, max/infInstability Analysis of the Multiple GaN Chips based Cascode Power Module. In Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, 2022-01-01, 2022-July, pp. Dostupné na: https://doi.org/10.1109/IPFA55383.2022.9915768. LIANG, Ye - ZHANG, Yuanlei - HE, Xiuyuan - ZHAO, Yinchao - CUI, Miao - WEN, Huiqing - LIU, Wen. Study of Drain-current Collapse in AlGaN/GaN MIS-HEMTs with Different Gate Lengths. In Proceedings of 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022, 2022-01-01, pp. Dostupné na: https://doi.org/10.1109/ICSICT55466.2022.9963385. VAMSI, Biyyapu Sai - CHAUDHARY, Tarun - KAKKAR, Deepti - TIWARI, Amit - SHARMA, Manish. GaN technology analysis as a greater mobile semiconductor: An overview. In Intelligent Green Technologies for Sustainable Smart Cities, 2022-08-23, pp. 247-267. Dostupné na: https://doi.org/10.1002/9781119816096.ch12. ENISHERLOVA, K. L. - SEIDMAN, L. A. - BOGOLYUBOVA, S. Yu. Effect of Treatment in Nitrogen Plasma on the Electrical Parameters of AlGaN/GaN Heterostructures. In Russian Microelectronics, 2022-12-01, 51, 8, pp. 686-695. ISSN 10637397. Dostupné na: https://doi.org/10.1134/S1063739722080133. HAZIQ, M. - FALINA, S. - MANAF, A.A. - KAWARADA, H. - SYAMSUL, M. Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review. In MICROMACHINES. DEC 2022, vol. 13, no. 12. Dostupné na: https://doi.org/10.3390/mi13122133. ISLAM, N. - MOHAMED, M.F.P. - KHAN, M.F.A.J. - FALINA, S. - KAWARADA, H. - SYAMSUL, M. Reliability, Applications and Challenges of GaN HEMT Technology for Modern Power Devices: A Review. In CRYSTALS. NOV 2022, vol. 12, no. 11. Dostupné na: https://doi.org/10.3390/cryst12111581. WANG, F.Z. - WANG, Z.H. - CHEN, W.J. - SUN, R.Z. - XU, W.J. - WANG, Y. - JIA, H.Q. - ZHANG, B. An Ultralow Turn-On GaN Lateral Field-Effect Rectifier With Schottky-MIS Cascode Anode. In IEEE TRANSACTIONS ON ELECTRON DEVICES. ISSN 0018-9383, NOV 2022, vol. 69, no. 11, p. 6485-6491. Dostupné na: https://doi.org/10.1109/TED.2022.3204526. LIU, X.Y. - ZHANG, S. - WEI, K. - ZHANG, Y.C. - YIN, H.B. - CHEN, X.J. - HUANG, S. - LIU, G.G. - ZHENG, Y.K. - YUAN, T.T. - NIU, J.B. - WANG, X.H. Improved Stability of GaN MIS-HEMT With 5-nm Plasma-Enhanced Atomic Layer Deposition SiN Gate Dielectric. In IEEE ELECTRON DEVICE LETTERS. ISSN 0741-3106, SEP 2022, vol. 43, no. 9, p. 1408-1411. Dostupné na: https://doi.org/10.1109/LED.2022.3194136. CHENG, J.T. - LIU, F.F. - JIANG, C.P. - ZHU, W.Q. Effect of amorphous ternary AlBN passivations on the performance of AlGaN/GaN HEMTs. In AIP ADVANCES. JUL 1 2022, vol. 12, no. 7. Dostupné na: https://doi.org/10.1063/5.0096290. CHENG, C.A. - REN, Y. - LI, C.G. - DONG, B. - WANG, C.A. - LIANG, X.H. - LIU, N.Y. - CHEN, Z.T. - LI, S.T. Low etching damage surface obtained by a mixed etching method and the influence of surface states on the C-V characteristics of AlGaN/GaN Schottky barrier diodes. In MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. ISSN 1369-8001, AUG 15 2022, vol. 147. Dostupné na: https://doi.org/10.1016/j.mssp.2022.106667. OZAKI, S. - KUMAZAKI, Y. - OKAMOTO, N. - HARA, N. - OHKI, T. Improved f (T)/f (max) in wide bias range by steam-annealed ultrathin-Al2O3 gate dielectrics for InP-based high-electron-mobility transistors. In APPLIED PHYSICS EXPRESS. ISSN 1882-0778, APR 1 2022, vol. 15, no. 4. Dostupné na: https://doi.org/10.35848/1882-0786/ac5a17. NELA, L. - ERINE, C. - ZADEH, A.M. - MATIOLI, E. Intrinsic Polarization Super Junctions: Design of Single and Multichannel GaN Structures. In IEEE TRANSACTIONS ON ELECTRON DEVICES. ISSN 0018-9383, APR 2022, vol. 69, no. 4, p. 1798-1804. Dostupné na: https://doi.org/10.1109/TED.2022.3151558. BABY, R. - VENUGOPALRAO, A. - CHANDRASEKAR, H. - RAGHAVAN, S. - RANGARAJAN, M. - NATH, D.N. Study of the impact of interface traps associated with SiN (X) passivation on AlGaN/GaN MIS-HEMTs. In SEMICONDUCTOR SCIENCE AND TECHNOLOGY. ISSN 0268-1242, MAR 1 2022, vol. 37, no. 3. Dostupné na: https://doi.org/10.1088/1361-6641/ac48dd. ZHANG, X.D. - WEI, X. - ZHANG, P.P. - ZHANG, H. - ZHANG, L. - DENG, X.G. - FAN, Y.M. - YU, G.H. - DONG, Z.H. - FU, H.Q. - CAI, Y. - FU, K. - ZHANG, B.S. Low Threshold Voltage Shift in AlGaN/GaN MIS-HEMTs on Si Substrate Using SiNx/SiON as Composite Gate Dielectric. In ELECTRONICS. MAR 2022, vol. 11, no. 6. Dostupné na: https://doi.org/10.3390/electronics11060895. SUSANTO, I. - TSAI, C.Y. - HO, Y.T. - TSAI, P.Y. - YU, I.S. Enhancement of optical property and crystal structure for GaN films on 2D MoS2 buffer layer by nitridation treatment. In SURFACE & COATINGS TECHNOLOGY. ISSN 0257-8972, MAR 25 2022, vol. 434. Dostupné na: https://doi.org/10.1016/j.surfcoat.2022.128199. OZAKI, S. - YAITA, J. - YAMADA, A. - MINOURA, Y. - OHKI, T. - OKAMOTO, N. - NAKAMURA, N. - KOTANI, J. Surface-Oxide-Controlled InAlGaN/GaN High-Electron-Mobility Transistors Using Al2O3-Based Insulated-Gate Structures with H2O Vapor Pretreatment. In PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. ISSN 1862-6300, APR 2022, vol. 219, no. 7. Dostupné na: https://doi.org/10.1002/pssa.202100638. CALZOLARO, A. - MIKOLAJICK, T. - WACHOWIAK, A. Status of Aluminum Oxide Gate Dielectric Technology for Insulated-Gate GaN-Based Devices. In MATERIALS. FEB 2022, vol. 15, no. 3. Dostupné na: https://doi.org/10.3390/ma15030791. ZHAO, Y. - XU, S.R. - FENG, L.S. - PENG, R.S. - FAN, X.M. - DU, J.J. - SU, H.K. - ZHANG, J.C. - HAO, Y. The performance improvement of AlGaN/GaN heterojunction by using nano-patterned sapphire substrate. In MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. ISSN 1369-8001, JUN 1 2022, vol. 143. Dostupné na: https://doi.org/10.1016/j.mssp.2022.106535. YE, R. - CAI, X.L. - DU, C.L. - LIU, H.J. - ZHANG, Y. - DUAN, X.Y. - ZHU, J.J. An Overview on Analyses and Suppression Methods of Trapping Effects in AlGaN/GaN HEMTs. In IEEE ACCESS. ISSN 2169-3536, 2022, vol. 10, p. 21759-21773. Dostupné na: https://doi.org/10.1109/ACCESS.2021.3139443. SCHILIRO, E. - FIORENZA, P. - GRECO, G. - MONFORTE, F. - CONDORELLI, G.G. - ROCCAFORTE, F. - GIANNAZZO, F. - LO NIGRO, R. Early Growth Stages of Aluminum Oxide (Al2O3) Insulating Layers by Thermal- and Plasma-Enhanced Atomic Layer Deposition on AlGaN/GaN Heterostructures. In ACS APPLIED ELECTRONIC MATERIALS. JAN 25 2022, vol. 4, no. 1, p. 406-415. Dostupné na: https://doi.org/10.1021/acsaelm.1c01059. BELENIOTIS, P. - SCHNIEDER, F. - KRAUSE, S. - HAQUE, S. - RUDOLPH, M. An efficient drain-lag model for microwave GaN HEMTs based on ASM-HEMT. In INTERNATIONAL JOURNAL OF MICROWAVE AND WIRELESS TECHNOLOGIES. ISSN 1759-0787, MAR 2022, vol. 14, no. 2, p. 134-142. Dostupné na: https://doi.org/10.1017/S1759078721001483. VISWANATHAN, S. - PRAVIN, C. - ARASAMUDI, R.B. - PAVITHRAN, P. Influence of Interface trap distributions over the device characteristics of AlGaN/GaN/AlInN MOS-HEMT using Cubic Spline Interpolation technique. In INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS. ISSN 0894-3370, JAN 2022, vol. 35, no. 1. Dostupné na: https://doi.org/10.1002/jnm.2936. Singh, S., Chaudhary, T., Khanna, G.: Recent Advancements in Wide Band Semiconductors (SiC and GaN) Technology for Future Devices In Silicon Volume 14, (2022) 5793. KNEZEVIC, Tihomir - NANVER, Lis K. Identifying nano-Schottky diode currents in silicon diodes with 2D interfacial layers. In IEEE International Conference on Microelectronic Test Structures, 2023-01-01, 2023-March, pp. Dostupné na: https://doi.org/10.1109/ICMTS55420.2023.10094164. Kategória ADCA - Vedecké práce v zahraničných karentovaných časopisoch impaktovaných Kategória (od 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Typ výstupu článok Rok vykazovania 2018 Registrované v WOS Registrované v SCOPUS Registrované v CCC DOI 10.1016/j.mssp.2017.09.028 
článok
Názov súboru Prístup Veľkosť Stiahnuté Typ Licence State of the art on gate insulation and surface passivation for GaN-based power HEMTs.pdf Prístupný 1.6 MB 1 Vydavateľská verzia rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2018 2017 2.593 Q2 0.634 Q2
Počet záznamov: 1