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State of the art on gate insulation and surface passivation for GaN-based power HEMTs
Názov State of the art on gate insulation and surface passivation for GaN-based power HEMTs Autor Hashizume T. Spoluautori Nishiguchi K. Kaneki S. Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ORCID Yatabe Z. Zdroj.dok. Materials science in semiconductor processing. Vol. 78 (2018), p. 85-95 Jazyk dok. eng - angličtina Druh dok. rozpis článkov z periodík (rbx) Ohlasy FIORENZA, Patrick - GRECO, Giuseppe - SCHILIRO, Emanuela - IUCOLANO, Ferdinando - NIGRO, Raffaella Lo - ROCCAFORTE, Fabrizio. Determining oxide trapped charges in Al inf2/inf O inf3/inf insulating films on recessed AlGaN/GaN heterostructures by gate capacitance transients measurements. In Japanese Journal of Applied Physics. ISSN 00214922, 2018-05-01, 57, 5, pp.050307 ROCCAFORTE, F. - FIORENZA, P. - GRECO, G. - LO NIGRO, R. - GIANNAZZO, F. - IUCOLANO, F. - SAGGIO, M. Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices. In MICROELECTRONIC ENGINEERING. FEB 5 2018, vol. 187, p. 66-77. GAO, Z. - ROMERO, M.F. - CALLE, F. Thermal and Electrical Stability Assessment of AlGaN/GaN Metal-Oxide-Semiconductor High-Electron Mobility Transistors (MOS-HEMTs) With HfO2 Gate Dielectric. In IEEE TRANSACTIONS ON ELECTRON DEVICES. AUG 2018, vol. 65, no. 8, p. 3142-3148. HENTSCHEL, R. - GARTNER, J. - WACHOWIAK, A. - GROSSER, A. - MIKOLAJICK, T. - SCHMULT, S. Surface morphology of AlGaN/GaN heterostructures grown on bulk GaN by MBE. In JOURNAL OF CRYSTAL GROWTH. OCT 15 2018, vol. 500, p. 1-4. LIU, Z.K. - CHEN, D.B. - WAN, L.J. - LI, G.Q. Micron-Scale Annealing for Ohmic Contact Formation Applied in GaN HEMT Gate-First Technology. In IEEE ELECTRON DEVICE LETTERS. DEC 2018, vol. 39, no. 12, p. 1896-1899. ZENG, F.M. - AN, J.X. - ZHOU, G.N. - LI, W.M. - WANG, H. - DUAN, T.L. - JIANG, L.L. - YU, H.Y. A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability. In ELECTRONICS. 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Kategória ADCA - Vedecké práce v zahraničných karentovaných časopisoch impaktovaných Kategória (od 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Typ výstupu článok Rok vykazovania 2018 Registrované v WOS Registrované v SCOPUS Registrované v CCC DOI 10.1016/j.mssp.2017.09.028 
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Názov súboru Prístup Veľkosť Stiahnuté Typ Licence State of the art on gate insulation and surface passivation for GaN-based power HEMTs.pdf Prístupný 1.6 MB 1 Vydavateľská verzia rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2018 2017 2.593 Q2 0.634 Q2
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