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Evolution of metastable defects and its effect on the electronic properties of MoS2 films
Názov Evolution of metastable defects and its effect on the electronic properties of MoS2 films Autor Precner Marián 1987 SAVELEK - Elektrotechnický ústav SAV ORCID Spoluautori Polakovič T. Qiao Q. Trainer D. Putilov A.V. Di Giorgio C. Cone I. Zhu Y. Xi X.X. Iavarone M. Karapetrov Goran Zdroj.dok. Scientific Reports. Vol. 8 (2018), no. 6724 Jazyk dok. eng - angličtina Druh dok. rozpis článkov z periodík (rbx) Ohlasy YANG, M. - KIM, T.Y. - LEE, T. - HONG, S. Nanoscale enhancement of photoconductivity by localized charge traps in the grain structures of monolayer MoS2. In SCIENTIFIC REPORTS. OCT 25 2018, vol. 8. RODRIGUEZ, A. - VERHAGEN, T. - KALBAC, M. - VEJPRAVOVA, J. - FRANK, O. Imaging Nanoscale Inhomogeneities and Edge Delamination in As-Grown MoS2 Using Tip-Enhanced Photoluminescence. In PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS. ISSN 1862-6254, NOV 2019, vol. 13, no. 11. HE, H.N. - HUANG, D. - GAN, Q.M. - HAO, J.N. - LIU, S.L. - WU, Z.B. - PANG, W.K. - JOHANNESSEN, B. - TANG, Y.G. - LUO, J.L. - WANG, H.Y. - GUO, Z.P. Anion Vacancies Regulating Endows MoSSe with Fast and Stable Potassium Ion Storage. In ACS NANO. ISSN 1936-0851, OCT 2019, vol. 13, no. 10, p. 11843-11852. LI, H. - KO, T.J. - LEE, M. - CHUNG, H.S. - HAN, S.S. - OH, K.H. - SADMANI, A. - KANG, H. - JUNG, Y. Experimental Realization of Few Layer Two-Dimensional MoS2 Membranes of Near Atomic Thickness for High Efficiency Water Desalination. In NANO LETTERS. ISSN 1530-6984, AUG 2019, vol. 19, no. 8, p. 5194-5204. WEI, C. - WU, W.Z. - LI, H. - LIN, X.C. - WU, T. - ZHANG, Y.D. - XU, Q. - ZHANG, L.P. - ZHU, Y.H. - YANG, X.N. - LIU, Z. - XU, Q. Atomic Plane-Vacancy Engineering of Transition-Metal Dichalcogenides with Enhanced Hydrogen Evolution Capability. In ACS APPLIED MATERIALS & INTERFACES. ISSN 1944-8244, JUL 17 2019, vol. 11, no. 28, p. 25264-25270. 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Microwave-Induced Structural Engineering and Pt Trapping in 6R-TaS2 for the Hydrogen Evolution Reaction. In SMALL. ISSN 1613-6810, DEC 2020, vol. 16, no. 50. LIN, Z. - FU, B. - AN, Y.K. Effects of defects and anions on the geometry, electronic structures and exchange interaction of Fe-doped 2H-MoSe2 monolayer. In APPLIED SURFACE SCIENCE. ISSN 0169-4332, OCT 30 2020, vol. 528. CHASTE, J. - HNID, I. - KHALIL, L. - SI, C. - DURNEZ, A. - LAFOSSE, X. - ZHAO, M.Q. - JOHNSON, A.T.C. - ZHANG, S.B. - BANG, J. - OUERGHI, A. Phase Transition in a Memristive Suspended MoS2 Monolayer Probed by Opto- and Electro-Mechanics. In ACS NANO. ISSN 1936-0851, OCT 27 2020, vol. 14, no. 10, p. 13611-13618. MURRAY, C. - VAN EFFEREN, C. - JOLIE, W. - FISCHER, J.A. - HALL, J. - ROSCH, A. - KRASHENINNIKOV, A.V. - KOMSA, H.P. - MICHELY, T. Band Bending and Valence Band Quantization at Line Defects in MoS2. In ACS NANO. ISSN 1936-0851, JUL 28 2020, vol. 14, no. 7, p. 9176-9187. FABBRI, F. - DINELLI, F. - FORTI, S. - SEMENTA, L. - PACE, S. - PICCININI, G. - FORTUNELLI, A. - COLETTI, C. - PINGUE, P. Edge Defects Promoted Oxidation of Monolayer WS2 Synthesized on Epitaxial Graphene. In JOURNAL OF PHYSICAL CHEMISTRY C. ISSN 1932-7447, APR 23 2020, vol. 124, no. 16, p. 9035-9044. YAO, Y. - CHEN, F. - FU, L. - DING, S. - ZHAO, S.C. - ZHANG, Q. - SU, W.T. - DING, X. - SONG, K.X. In Situ Probing the Localized Optoelectronic Properties of Defective Monolayer WS2. In JOURNAL OF PHYSICAL CHEMISTRY C. ISSN 1932-7447, APR 2 2020, vol. 124, no. 13, p. 7591-7596. LEE, D. - JANG, J.H. - SONG, W. - MOON, J. - KIM, Y. - LEE, J. - JEONG, B. - PARK, S. In situ work-function measurement during chemical transformation of MoS2 to MoO3 by ambient-pressure x-ray photoelectron spectroscopy. In 2D MATERIALS. ISSN 2053-1583, APR 2020, vol. 7, no. 2. POLLMANN, E. - MORBEC, J.M. - MADAUSS, L. - BROCKERS, L. - KRATZER, P. - SCHLEBERGER, M. Molybdenum Disulfide Nanoflakes Grown by Chemical Vapor Deposition on Graphite: Nucleation, Orientation, and Charge Transfer. In JOURNAL OF PHYSICAL CHEMISTRY C. ISSN 1932-7447, JAN 30 2020, vol. 124, no. 4, p. 2689-2697. EKSPONG, J. - GRACIA-ESPINO, E. Theoretical Analysis of Surface Active Sites in Defective 2H and 1T ' MoS2 Polymorphs for Hydrogen Evolution Reaction: Quantifying the Total Activity of Point Defects. In ADVANCED THEORY AND SIMULATIONS. MAR 2020, vol. 3, no. 3. SAHA, D. - KRUSE, P. Editors' Choice-Review-Conductive Forms of MoS(2)and Their Applications in Energy Storage and Conversion. In JOURNAL OF THE ELECTROCHEMICAL SOCIETY. ISSN 0013-4651, JAN 9 2020, vol. 167, no. 12. SU, W.T. - KUMAR, N. - SHU, H.B. - LANCRY, O. - CHAIGNEAU, M. In Situ Visualization of Optoelectronic Behavior of Grain Boundaries in Monolayer WSe2 at the Nanoscale. In JOURNAL OF PHYSICAL CHEMISTRY C. ISSN 1932-7447, DEC 9 2021, vol. 125, no. 48, p. 26883-26891. ABD-ELRAHIM, A.G. - ALI, M.A. Facile synthesis of nano-sized zinc-rich ZnCdS ternary alloy and UV-irradiation curing of photoluminescence emission characteristics. In OPTICAL MATERIALS. ISSN 0925-3467, DEC 2021, vol. 122, B. BLUNDO, E. - CAPPELLUTI, E. - FELICI, M. - PETTINARI, G. - POLIMENI, A. Strain-tuning of the electronic, optical, and vibrational properties of two-dimensional crystals. In APPLIED PHYSICS REVIEWS. ISSN 1931-9401, JUN 2021, vol. 8, no. 2. RUDI, S.G. - SOLEIMANI-AMIRI, S. Modulation of electronic and optical properties of line defected armchair MoS2 nanoribbon by vacancy passivation. In JOURNAL OF PHYSICS-CONDENSED MATTER. ISSN 0953-8984, MAY 5 2021, vol. 33, no. 18. FARIGLIANO, L.M. - PAREDES-OLIVERA, P.A. - PATRITO, E.M. Oxidative etching of S-vacancy defective MoS2 monolayer upon reaction with O-2. In PHYSICAL CHEMISTRY CHEMICAL PHYSICS. ISSN 1463-9076, MAY 7 2021, vol. 23, no. 17, p. 10225-10235. 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Kategória ADCA - Vedecké práce v zahraničných karentovaných časopisoch impaktovaných Kategória (od 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Typ výstupu článok Rok vykazovania 2018 Registrované v WOS Registrované v SCOPUS Registrované v CCC DOI 10.1038/s41598-018-24913-y 
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Názov súboru Prístup Veľkosť Stiahnuté Typ Licence Evolution of metastable defects and its effect on the electronic properties of MoS2 films.pdf Prístupný 4.3 MB 3 Vydavateľská verzia rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2018 2017 4.122 Q1 1.533 Q1
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