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High temperature current transport in gate oxides based (GaN)/AlGaN/GaN Schottky diodes
Názov High temperature current transport in gate oxides based (GaN)/AlGaN/GaN Schottky diodes Autor Osvald Jozef 1953 SAVELEK - Elektrotechnický ústav SAV ORCID Spoluautori Lalinský Tibor 1951 SAVELEK - Elektrotechnický ústav SAV Vanko Gabriel 1981 SAVELEK - Elektrotechnický ústav SAV ORCID Zdroj.dok. Applied Surface Science. Vol. 461 (2018), p. 206-211 Jazyk dok. eng - angličtina Druh dok. rozpis článkov z periodík (rbx) Ohlasy HOU, C. - YORK, K.R. - MAKIN, R.A. - DURBIN, S.M. - GAZONI, R.M. - REEVES, R.J. - ALLEN, M.W. High temperature (500 degrees C) operating limits of oxidized platinum group metal (PtOx, IrOx, PdOx, RuOx) Schottky contacts on itboldbeta/it/bold-Ga2O3. In APPLIED PHYSICS LETTERS. ISSN 0003-6951, NOV 16 2020, vol. 117, no. 20. SUN, S.X. - LIU, H.H. - YANG, B. - CHANG, M.M. - ZHONG, Y.H. - LI, Y.X. - DING, P. - JIN, Z. - WEI, Z.C. Effect of 1 MeV electron irradiation on gate contact characteristics of InP-based HEMTs. In MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. ISSN 1369-8001, AUG 1 2020, vol. 114. TURUT, A. On current-voltage and capacitance-voltage characteristics of metal-semiconductor contacts. In TURKISH JOURNAL OF PHYSICS. ISSN 1300-0101, 2020, vol. 44, no. 4, p. 302-347. OZDEMIR, M. C. - SEVGILI, O. - ORAK, I - TURUT, A. Determining the potential barrier presented by the interfacial layer from the temperature induced I-V characteristics in Al/p-Si Structure with native oxide layer. In MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2021, vol. 125, no., pp. ISSN 1369-8001. Dostupné na: https://doi.org/10.1016/j.mssp.2020.105629. TURUT, Abdulmecit - EFEOGLU, Hasan. Thermal sensitivity from current-voltage-measurement temperature characteristics in Au/n-GaAs Schottky contacts. In TURKISH JOURNAL OF PHYSICS, 2021, vol. 45, no. 5, pp. 268-280. ISSN 1300-0101. Dostupné na: https://doi.org/10.3906/fiz-2108-15. SREEJITH, S. - SIVASANKARI, B. - BABU DEVASENAPATI, S. - KARTHIKA, A. - MATHEW, Anitha. Recent Developments in Schottky Diodes and Their Applications. In Emerging Low-Power Semiconductor Devices: Applications for Future Technology Nodes, 2022-01-01, pp. 127-152. Dostupné na: https://doi.org/10.1201/9781003240778-7. Kategória ADCA - Vedecké práce v zahraničných karentovaných časopisoch impaktovaných Kategória (od 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Typ výstupu článok Rok vykazovania 2018 Registrované v WOS Registrované v SCOPUS Registrované v CCC DOI 10.1016/j.apsusc.2018.06.113 
článok
rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2018 2017 4.439 Q1 1.093 Q1
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