Počet záznamov: 1
Hafnium oxide and tantalum oxide based resistive switching structures for realization of minimum and maximum functions
Názov Hafnium oxide and tantalum oxide based resistive switching structures for realization of minimum and maximum functions Autor Fröhlich Karol 1954 SAVELEK - Elektrotechnický ústav SAV ORCID Spoluautori Kundrata Ivan SAVELEK - Elektrotechnický ústav SAV Blaho Michal 1983 SAVELEK - Elektrotechnický ústav SAV Precner Marián 1987 SAVELEK - Elektrotechnický ústav SAV ORCID Ťapajna Milan 1977 SAVELEK - Elektrotechnický ústav SAV ORCID Klimo Martin Šuch Ondrej 1972 Škvarek Ondrej Zdroj.dok. Journal of Applied Physics. Vol. 124 (2018), no. 152109 Jazyk dok. eng - angličtina Druh dok. rozpis článkov z periodík (rbx) Ohlasy AGUIRRE, F.L. - PAZOS, S.M. - PALUMBO, F. - SUNE, J. - MIRANDA, E. Application of the Quasi-Static Memdiode Model in Cross-Point Arrays for Large Dataset Pattern Recognition. In IEEE ACCESS. ISSN 2169-3536, 2020, vol. 8, p. 202174-202193. AGUIRRE, F.L. - PAZOS, S.M. - PALUMBO, F. - SUNE, J. - MIRANDA, E. SPICE Simulation of RRAM-Based Cross-Point Arrays Using the Dynamic Memdiode Model. In FRONTIERS IN PHYSICS. ISSN 2296-424X, SEP 23 2021, vol. 9. AGUIRRE, F.L. - GOMEZ, N.M. - PAZOS, S.M. - PALUMBO, F. - SUNE, J. - MIRANDA, E. Minimization of the Line Resistance Impact on Memdiode-Based Simulations of Multilayer Perceptron Arrays Applied to Pattern Recognition. In JOURNAL OF LOW POWER ELECTRONICS AND APPLICATIONS. MAR 2021, vol. 11, no. 1. AGUIRRE, F.L. - PIROS, E. - KAISER, N. - VOGEL, T. - PETZOLD, S. - GEHRUNGER, J. - OSTER, T. - HOCHBERGER, C. - SUNE, J. - ALFF, L. - MIRANDA, E. Fast Fitting of the Dynamic Memdiode Model to the Conduction Characteristics of RRAM Devices Using Convolutional Neural Networks. In MICROMACHINES. NOV 2022, vol. 13, no. 11. Dostupné na: https://doi.org/10.3390/mi13112002. LI, C.Y. - HSU, T.H. - HUANG, C.L. Reliable RRAM devices utilizing sol-gel derived amorphous Ce2Ti2O7 thin films. In JOURNAL OF ALLOYS AND COMPOUNDS. ISSN 0925-8388, OCT 25 2023, vol. 961. Dostupné na: https://doi.org/10.1016/j.jallcom.2023.170987. GE, P.Z. - TANG, H. - HUANG, X.X. - TANG, X.G. - JIANG, Y.P. - LIU, Q.X. Investigation of resistive switching properties in acceptor-induced Sr(Fe,Ti) Osub3/sub thin film memristor. In MATERIALS TODAY COMMUNICATIONS. JUN 2023, vol. 35. Dostupné na: https://doi.org/10.1016/j.mtcomm.2023.105593. Kategória ADCA - Vedecké práce v zahraničných karentovaných časopisoch impaktovaných Kategória (od 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Typ výstupu článok Rok vykazovania 2018 Registrované v WOS Registrované v SCOPUS Registrované v CCC DOI 10.1063/1.5025802 
článok
rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2018 2017 2.176 Q2 0.739 Q2
Počet záznamov: 1