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Study of Schottky barrier detectors based on a high quality 4H-SiC epitaxial layer with different thickness
Názov Study of Schottky barrier detectors based on a high quality 4H-SiC epitaxial layer with different thickness Autor Zaťko Bohumír 1973 SAVELEK - Elektrotechnický ústav SAV ORCID Spoluautori Hrubčín Ladislav 1951 SAVELEK - Elektrotechnický ústav SAV Šagátová A. Osvald Jozef 1953 SAVELEK - Elektrotechnický ústav SAV ORCID Boháček Pavol 1954 SAVELEK - Elektrotechnický ústav SAV Kováčová Eva 1966 SAVELEK - Elektrotechnický ústav SAV Halahovets Yuriy 1982- SAVFYZIK - Fyzikálny ústav SAV Rozov S.V. Sandukovskij V.G. Zdroj.dok. Applied Surface Science. Vol. 536, no. 14 (2021), no. 147801 Jazyk dok. eng - angličtina Druh dok. rozpis článkov z periodík (rbx) Ohlasy WANG, Xi - ZHONG, Yiwen - PU, Hongbin - HU, Jichao - FENG, Xianfeng - YANG, Guowen. Investigation of lateral spreading current in the 4H-SiC Schottky barrier diode chip. In JOURNAL OF SEMICONDUCTORS. ISSN 1674-4926, 2021, vol. 42, no. 11, 112802. Dostupné na: https://doi.org/10.1088/1674-4926/42/11/112802. GULLU, H. H. - SIRIN, D. Seme - YILDIZ, D. E. Analysis of Double Gaussian Distribution on Barrier Inhomogeneity in a Au/n-4H SiC Schottky Diode. In JOURNAL OF ELECTRONIC MATERIALS. ISSN 0361-5235, 2021, vol. 50, no. 12, pp. 7044-7056. Dostupné na: https://doi.org/10.1007/s11664-021-09254-3. OZDEMIR, A. F. - GOKSU, T. - YILDIRIM, N. - TURUT, A. Effects of measurement temperature and metal thickness on Schottky diode characteristics. In PHYSICA B-CONDENSED MATTER. ISSN 0921-4526, 2021, vol. 616, 413125. Dostupné na: https://doi.org/10.1016/j.physb.2021.413125. KACHA, A.H. - AMROUN, M.N. - AKKAL, B. - BENAMARA, Z. Effect of the Ultra-Thin GaN Interlayer on the Electrical and Photoelectrical Parameters of Au|GaAs Schottky Barrier Diodes. In SEMICONDUCTORS. ISSN 1063-7826, DEC 2021, vol. 55, no. SUPPL 1, p. S54-S61. Dostupné na: https://doi.org/10.1134/S1063782621090086. NAPOLI, Marzio De. SiC detectors: A review on the use of silicon carbide as radiation detection material. In FRONTIERS IN PHYSICS, 2022, vol. 10. ISSN 2296-424X. Dostupné na: https://doi.org/10.3389/fphy.2022.898833. LI, Xinxin - WANG, Haipeng - WANG, Bing - GUAN, Yingchun. Machine learning methods for prediction analyses of 4H-SiC microfabrication via femtosecond laser processing. In JOURNAL OF MATERIALS RESEARCH AND TECHNOLOGY-JMR&T, 2022, vol. 18, pp. 2152-2165. ISSN 2238-7854. Dostupné na: https://doi.org/10.1016/j.jmrt.2022.03.124. CAPAN, Ivana. 4H-SiC Schottky Barrier Diodes as Radiation Detectors: A Review. In ELECTRONICS, 2022, vol. 11, no. 4. Dostupné na: https://doi.org/10.3390/electronics11040532. GAO, R. L. - DU, X. - MA, W. Y. - SUN, B. - RUAN, J. L. - OUYANG, X. - LI, H. - CHEN, L. - LIU, L. Y. - OUYANG, X. P. Radiation tolerance analysis of 4H-SiC PIN diode detectors for neutron irradiation. In SENSORS AND ACTUATORS A-PHYSICAL, 2022, vol. 333. ISSN 0924-4247. Dostupné na: https://doi.org/10.1016/j.sna.2021.113241. LONG, Ze - NIU, Mengchen - XIA, Xiaochuan - JIANG, Wei - LI, Yunju - JING, Hantao - LIANG, Hongwei - FAN, Ruirui. Development of the large sensitive area 4H-SiC Schottky detectors at the Back-n. In NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2023, vol. 1056, no., pp. ISSN 0168-9002. Dostupné na: https://doi.org/10.1016/j.nima.2023.168585. CAPAN, Ivana - BERNAT, Robert - MAKINO, Takahiro - KNEZEVIC, Tihomir. 4H-SiC Schottky barrier diodes as radiation detectors: A role of Schottky contact area. In DIAMOND AND RELATED MATERIALS, 2023, vol. 137, no., pp. ISSN 0925-9635. Dostupné na: https://doi.org/10.1016/j.diamond.2023.110072. HUANG, Zhi - ZHANG, Zhen - CHANG, Hudong - CHANG, Yakuan - LIU, Honggang - SUN, Bing. Temperature-dependent electrical properties of schottky barrier diodes based on carbon nanotube arrays. In JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2023, vol. 34, no. 12, pp. ISSN 0957-4522. Dostupné na: https://doi.org/10.1007/s10854-023-10447-1. BERNAT, Robert - KNEZEVIC, Tihomir - RADULOVIC, Vladimir - SNOJ, Luka - MAKINO, Takahiro - OHSHIMA, Takeshi - CAPAN, Ivana. Radiation Response of Large-Area 4H-SiC Schottky Barrier Diodes. In MATERIALS, 2023, vol. 16, no. 6, pp. Dostupné na: https://doi.org/10.3390/ma16062202. MANDAL, Krishna C. - CHAUDHURI, Sandeep K. - RUDDY, Frank H. High-Resolution Alpha Spectrometry Using 4H-SiC Detectors: A Review of the State-of-the-Art. In IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2023, vol. 70, no. 5, pp. 823-830. ISSN 0018-9499. Dostupné na: https://doi.org/10.1109/TNS.2023.3267996. Kategória ADCA - Vedecké práce v zahraničných karentovaných časopisoch impaktovaných Kategória (od 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Typ výstupu článok Rok vykazovania 2021 Registrované v WOS Registrované v SCOPUS Registrované v CCC DOI 10.1016/j.apsusc.2020.147801 
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Názov súboru Prístup Veľkosť Stiahnuté Typ Licence Study of Schottky barrier detectors based on a high quality 4H SiC epitaxial.pdf Neprístupný/archív 583.7 KB 2 Vydavateľská verzia Study of Schottky barrier detectors based on a high quality 4H SiC epitaxial.pdf Prístupný 583.7 KB 1 Autorský preprint rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2021 2020 6.707 Q1 1.295 Q1
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