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Gate reliability investigation in normally-off p-type-gan cap/AlGaN/GaN HEMTs under forward bias stress
Názov Gate reliability investigation in normally-off p-type-gan cap/AlGaN/GaN HEMTs under forward bias stress Autor Ťapajna Milan 1977 SAVELEK - Elektrotechnický ústav SAV ORCID Spoluautori Hilt O. Bahat-Treidel E. Würfl H.-J. Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ORCID Zdroj.dok. IEEE Electron Device Letters. Vol. 37 (2016), p. 385 - 388 Jazyk dok. eng - angličtina Druh dok. rozpis článkov z periodík (rbx) Ohlasy ROSSETTO, I. - MENEGHINI, M. - RIZZATO, V. - RUZZARIN, M. - FAVARON, A. - STOFFELS, S. - VAN HOVE, M. - POSTHUMA, N. - WU, T.L. - MARCON, D. - DECOUTERE, S. - MENEGHESSO, G. - ZANONI, E. In MICROELECTRONICS RELIABILITY. SEP 2016, vol. 64, SI, p. 547-551. BAHL, S.R. - RUIZ, D. - LEE, D.S. In 2016 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). 2016. TALLARICO, A.N. - STOFFELS, S. - MAGNONE, P. - POSTHUMA, N. - SANGIORGI, E. - DECOUTERE, S. - FIEGNA, C. In IEEE ELECTRON DEVICE LETTERS. JAN 2017, vol. 38, no. 1, p. 99-102. MENEGHESSO, G. - MENEGHINI, M. - ROSSETTO, I. - CANATO, E. - BARTHOLOMEUS, J. - DE SANTI, C. - TRIVELLIN, N. - ZANONI, E. In GALLIUM NITRIDE MATERIALS AND DEVICES XII. 2017, vol. 10104. MENEGHINI, M. - ROSSETTO, I. - BORGA, M. - CANATO, E. - DE SANTI, C. - RAMPAZZO, F. - MENEGHESSO, G. - ZANONI, E. - STOFFELS, S. - VAN HOVE, M. - POSTHUMA, N. - DECOUTERE, S. In 2017 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). 2017. MENEGHINI, M. - ROSSETTO, I. - DE SANTI, C. - RAMPAZZO, F. - TAJALLI, A. - BARBATO, A. - RUZZARIN, M. - BORGA, M. - CANATO, E. - ZANONI, E. - MENEGHESSO, G. In 2017 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). 2017. TANAKA, K. - MORITA, T. - ISHIDA, M. - HATSUDA, T. - UEDA, T. - YOKOYAMA, K. - IKOSHI, A. - HIKITA, M. - TOKI, M. - YANAGIHARA, M. - UEMOTO, Y. In 2017 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). 2017. EFTHYMIOU, L. - LONGOBARDI, G. - CAMUSO, G. - CHIEN, T. - CHEN, M. - UDREA, F. In APPLIED PHYSICS LETTERS. MAR 20 2017, vol. 110, no. 12. ZHOU, Y. - ZHONG, Y.Z. - GAO, H.W. - DAI, S.J. - HE, J.L. - FENG, M.X. - ZHAO, Y.F. - SUN, Q. - AN, D.S. - YANG, H. In IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. SEP 2017, vol. 5, no. 5, p. 340-346. ROSSETTO, I. - MENEGHINI, M. - CANATO, E. - BARBATO, M. - STOFFELS, S. - POSTHUMA, N. - DECOUTERE, S. - TALLARICO, A.N. - MENEGHESSO, G. - ZANONI, E. In MICROELECTRONICS RELIABILITY. SEP 2017, vol. 76, SI, p. 298-303. MUKHERJEE, K. - DARRACQ, F. - CURUTCHET, A. - MALBERT, N. - LABAT, N. Comprehensive study into underlying mechanisms of anomalous gate leakage degradation in GaN high electron mobility transistors. In IEEE International Reliability Physics Symposium Proceedings. ISSN 15417026, 2018-05-25, 2018-March, pp. 4B.41-4B.49. BISI, Davide - ROSSETTO, Isabella - MENEGHINI, Matteo - MENEGHESSO, Gaudenzio - ZANONI, Enrico. Reliability in III-nitride devices. In Handbook of GaN Semiconductor Materials and Devices, 2017-01-01, pp. 367-430. WANG, L.M. - TAN, C.J. - LUO, H.C. - WANG, S.G. - YE, H.Y. - CHEN, X.P. Paper Title The Breakdown Voltage of AlGaN/GaN HEMT is Restricted to The Structure Parameters of The Device: A Study Based on TCAD. In 2018 19TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY (ICEPT). 2018, p. 961-964. TSAO, J.Y. - CHOWDHURY, S. - HOLLIS, M.A. - JENA, D. - JOHNSON, N.M. - JONES, K.A. - KAPLAR, R.J. - RAJAN, S. - VAN DE WALLE, C.G. - BELLOTTI, E. - CHUA, C.L. - COLLAZO, R. - COLTRIN, M.E. - COOPER, J.A. - EVANS, K.R. - GRAHAM, S. - GROTJOHN, T.A. - HELLER, E.R. - HIGASHIWAKI, M. - ISLAM, M.S. - JUODAWLKIS, P.W. - KHAN, M.A. - KOEHLER, A.D. - LEACH, J.H. - MISHRA, U.K. - NEMANICH, R.J. - PILAWA-PODGURSKI, R.C.N. - SHEALY, J.B. - SITAR, Z. - TADJER, M.J. - WITULSKI, A.F. - WRABACK, M. - SIMMONS, J.A. Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges. In ADVANCED ELECTRONIC MATERIALS. JAN 2018, vol. 4, no. 1. TALLARICO, A.N. - STOFFELS, S. - POSTHUMA, N. - MAGNONE, P. - MARCON, D. - DECOUTERE, S. - SANGIORGI, E. - FIEGNA, C. PBTI in GaN-HEMTs With p-Type Gate: Role of the Aluminum Content on Delta V-TH and Underlying Degradation Mechanisms. In IEEE TRANSACTIONS ON ELECTRON DEVICES. JAN 2018, vol. 65, no. 1, p. 38-44. LONGOBARDI, G. - EFTHYMIOU, L. - ARNOLD, M. GaN power devices for Electric Vehicles State-of-the-art and future perspective. In 2018 IEEE INTERNATIONAL CONFERENCE ON ELECTRICAL SYSTEMS FOR AIRCRAFT, RAILWAY, SHIP PROPULSION AND ROAD VEHICLES & INTERNATIONAL TRANSPORTATION ELECTRIFICATION CONFERENCE (ESARS-ITEC). 2018. MUKHERJEE, K. - DARRACQ, F. - CURUTCHET, A. - MALBERT, N. - LABAT, N. Comprehensive Study into Underlying Mechanisms of Anomalous Gate Leakage Degradation in GaN High Electron Mobility Transistors. In 2018 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). 2018. GE, M. - CAI, Q. - ZHANG, B.H. - CHEN, D.J. - HU, L.Q. - XUE, J.J. - LU, H. - ZHANG, R. - ZHENG, Y.D. Effects of the Trap Level in the Unintentionally Doped GaN Buffer Layer on Optimized p-GaN Gate AlGaN/GaN HEMTs. In PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. JAN 24 2018, vol. 215, no. 2. ROCCAFORTE, F. - FIORENZA, P. - GRECO, G. - LO NIGRO, R. - GIANNAZZO, F. - IUCOLANO, F. - SAGGIO, M. Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices. In MICROELECTRONIC ENGINEERING. FEB 5 2018, vol. 187, p. 66-77. HAO, R.H. - XU, N. - YU, G.H. - SONG, L. - CHEN, F. - ZHAO, J. - DENG, X.G. - LI, X. - CHENG, K. - FU, K. - CAI, Y. - ZHANG, X.P. - ZHANG, B.S. Studies on Fabrication and Reliability of GaN High-Resistivity-Cap-Layer HEMT. In IEEE TRANSACTIONS ON ELECTRON DEVICES. APR 2018, vol. 65, no. 4, p. 1314-1320. MOHANBABU, A. - MOHANKUMAR, N. - RAJ, D.G. - SARKAR, P. - SAHA, S.K. Device characteristics of enhancement mode double heterostructure DH-HEMT with boron-doped GaN gate cap layer for full-bridge inverter circuit. In INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS. MAY-JUN 2018, vol. 31, no. 3. GRECO, G. - IUCOLANO, F. - ROCCAFORTE, F. Review of technology for normally-off HEMTs with p-GaN gate. In MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. MAY 2018, vol. 78, p. 96-106. SAYADI, L. - IANNACCONE, G. - SICRE, S. - HABERLEN, O. - CURATOLA, G. Threshold Voltage Instability in p-GaN Gate AlGaN/GaN HFETs. In IEEE TRANSACTIONS ON ELECTRON DEVICES. JUN 2018, vol. 65, no. 6, p. 2454-2460. ZHANG, L. - ZHOU, H. - ZHANG, W.H. - DANG, K. - ZHANG, T. - MA, P.J. - MA, X.H. - ZHANG, J.C. AlGaN-Channel Gate Injection Transistor on Silicon Substrate With Adjustable 4-7-V Threshold Voltage and 1.3-kV Breakdown Voltage. In IEEE ELECTRON DEVICE LETTERS. JUL 2018, vol. 39, no. 7, p. 1026-1029. LUKENS, G. - HAHN, H. - KALISCH, H. - VESCAN, A. Self-Aligned Process for Selectively Etched p-GaN-Gated AlGaN/GaN-on-Si HFETs. In IEEE TRANSACTIONS ON ELECTRON DEVICES. SEP 2018, vol. 65, no. 9, p. 3732-3738. TAJALLI, A. - CANATO, E. - NARDO, A. - MENEGHINI, M. - STOCKMAN, A. - MOENS, P. - ZANONI, E. - MENEGHESSO, G. Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors. In MICROELECTRONICS RELIABILITY. SEP 2018, vol. 88-90, SI, p. 572-576. STOCKMAN, A. - MASIN, F. - MENEGHINI, M. - ZANONI, E. - MENEGHESSO, G. - BAKEROOT, B. - MOENS, P. Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors. In IEEE TRANSACTIONS ON ELECTRON DEVICES. DEC 2018, vol. 65, no. 12, p. 5365-5372. ZENG, F.M. - AN, J.X. - ZHOU, G.N. - LI, W.M. - WANG, H. - DUAN, T.L. - JIANG, L.L. - YU, H.Y. A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability. In ELECTRONICS. DEC 2018, vol. 7, no. 12. MOENS, P. - KOSTELNIK, P. - CONSTANT, A. AlGaN/GaN power devices in a SI world: From R&D to manufacturing and reliability. In CS MANTECH 2019 2019 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers, 2019-01-01, Code 148134 MENEGHESSO, Gaudenzio - MENEGHINI, Matteo - DE SANTI, Carlo - ZANONI, Enrico. GaN-based lateral and vertical devices: Physical mechanisms limiting stability and reliability. In 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, 2019-03-01, pp. 68-70. ROY, Chondon - PARKHIDEH, Babak. Design consideration for characterization and study of dynamic on state resistance of GaN devices. In 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2019, 2019-10-01, pp. 181-186. ZENG, C.K. - XU, W.Z. - XIA, Y.Y. - PAN, D.F. - WANG, Y.W. - WANG, Q. - ZHU, Y.H. - REN, F.F. - ZHOU, D. - YE, J.D. - CHEN, D.J. - ZHANG, R. - ZHENG, Y.D. - LU, H. Investigations of the gate instability characteristics in Schottky/ohmic type p-GaN gate normally-off AlGaN/GaN HEMTs. In APPLIED PHYSICS EXPRESS. ISSN 1882-0778, DEC 1 2019, vol. 12, no. 12. DEL ALAMO, J.A. - LEE, E.S. Stability and Reliability of Lateral GaN Power Field-Effect Transistors. In IEEE TRANSACTIONS ON ELECTRON DEVICES. ISSN 0018-9383, NOV 2019, vol. 66, no. 11, p. 4578-4590. TALLARICO, A.N. - STOFFELS, S. - POSTHUMA, N. - BAKEROOT, B. - DECOUTERE, S. - SANGIORGI, E. - FIEGNA, C. Gate Reliability of p-GaN HEMT With Gate Metal Retraction. In IEEE TRANSACTIONS ON ELECTRON DEVICES. ISSN 0018-9383, NOV 2019, vol. 66, no. 11, p. 4829-4835. CUI, P. - MERCANTE, A. - LIN, G.Y. - ZHANG, J. - YAO, P. - PRATHER, D.W. - ZENG, Y.P. High-performance InAIN/GaN HEMTs on silicon substrate with high f(T) x L-g. In APPLIED PHYSICS EXPRESS. ISSN 1882-0778, OCT 1 2019, vol. 12, no. 10. GE, M. - CAI, Q. - ZHANG, B.H. - CHEN, D.J. - HU, L.Q. - XUE, J.J. - LU, H. - ZHANG, R. - ZHENG, Y.D. Negative transconductance effect in p-GaN gate AlGaN/GaN HEMTs by traps in unintentionally doped GaN buffer layer. In CHINESE PHYSICS B. ISSN 1674-1056, SEP 2019, vol. 28, no. 10. LI, B.K. - LI, H. - WANG, J.N. - TANG, X. Asymmetric Bipolar Injection in a Schottky-Metal/p-GaN/AlGaN/GaN Device Under Forward Bias. In IEEE ELECTRON DEVICE LETTERS. ISSN 0741-3106, SEP 2019, vol. 40, no. 9, p. 1389-1392. HE, J.B. - WEI, J. - YANG, S. - WANG, Y.R. - ZHONG, K.L. - CHEN, K.J. Frequency- and Temperature-Dependent Gate Reliability of Schottky-Type p-GaN Gate HEMTs. In IEEE TRANSACTIONS ON ELECTRON DEVICES. ISSN 0018-9383, AUG 2019, vol. 66, no. 8, p. 3453-3458. MASIN, F. - MENEGHINI, M. - CANATO, E. - DE SANTI, C. - STOCKMAN, A. - ZANONI, E. - MOENS, P. - MENEGHESSO, G. Positive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress. In APPLIED PHYSICS LETTERS. ISSN 0003-6951, JUL 29 2019, vol. 115, no. 5. LI, B.K. - TANG, X. - LI, H. - MOGHADAM, H.A. - ZHANG, Z.F. - HAN, J.S. - NGUYEN, N.T. - DIMITRIJEV, S. - WANG, J.N. Impact of carrier injections on the threshold voltage in p-GaN gate AIGaN/GaN power HEMTs. In APPLIED PHYSICS EXPRESS. ISSN 1882-0778, JUN 1 2019, vol. 12, no. 6. ROCCAFORTE, F. - GRECO, G. - FIORENZA, P. - IUCOLANO, F. An Overview of Normally-Off GaN-Based High Electron Mobility Transistors. In MATERIALS. ISSN 1996-1944, MAY 2 2019, vol. 12, no. 10. WANG, Z.H. - WANG, Z.R. - ZHANG, Z.W. - YANG, D. - YAO, Y.Z. On the Baliga's Figure-Of-Merits (BFOM) Enhancement of a Novel GaN Nano-Pillar Vertical Field Effect Transistor (FET) with 2DEG Channel and Patterned Substrate. In NANOSCALE RESEARCH LETTERS. ISSN 1931-7573, APR 11 2019, vol. 14. TALLARICO, A.N. - STOFFELS, S. - POSTHUMA, N. - DECOUTERE, S. - SANGIORGI, E. - FIEGNA, C. Threshold Voltage Instability in GaN HEMTs With p-Type Gate: Mg Doping Compensation. In IEEE ELECTRON DEVICE LETTERS. ISSN 0741-3106, APR 2019, vol. 40, no. 4, p. 518-521. JIANG, H.X. - ZHU, R.Q. - LYU, Q.F. - LAU, K.M. High-Voltage p-GaN HEMTs With OFF-State Blocking Capability After Gate Breakdown. In IEEE ELECTRON DEVICE LETTERS. ISSN 0741-3106, APR 2019, vol. 40, no. 4, p. 530-533. WANG, Z.H. - WANG, S.J. - ZHANG, Z.W. - WANG, C.P. - YANG, D. - CHEN, X.H. - WANG, Z.R. - CAO, J. - YAO, Y.Z. A High-Performance Tunable LED-Compatible Current Regulator Using an Integrated Voltage Nanosensor. In IEEE TRANSACTIONS ON ELECTRON DEVICES. ISSN 0018-9383, APR 2019, vol. 66, no. 4, p. 1917-1923. GE, M. - RUZZARIN, M. - CHEN, D.J. - LU, H. - YU, X.X. - ZHOU, J.J. - DE SANTI, C. - ZHANG, R. - ZHENG, Y.D. - MENEGHINI, M. - MENEGHESSO, G. - ZANONI, E. Gate Reliability of p-GaN Gate AlGaN/GaN High Electron Mobility Transistors. In IEEE ELECTRON DEVICE LETTERS. ISSN 0741-3106, MAR 2019, vol. 40, no. 3, p. 379-382. SHI, Y.Y. - ZHOU, Q. - CHENG, Q. - WEI, P.C. - ZHU, L.Y. - WEI, D. - ZHANG, A.B. - CHEN, W.J. - ZHANG, B. Carrier Transport Mechanisms Underlying the Bidirectional V-TH Shift in p-GaN Gate HEMTs Under Forward Gate Stress. In IEEE TRANSACTIONS ON ELECTRON DEVICES. ISSN 0018-9383, FEB 2019, vol. 66, no. 2, p. 876-882. WANG, Z.H. - WANG, S.J. - YAO, Y.Z. A LE:D-Compatible Current Regulator with Integrated Electrically Adjustable Sensor. In 2019 8TH INTERNATIONAL SYMPOSIUM ON NEXT GENERATION ELECTRONICS (ISNE). ISSN 2378-8593, 2019. YAO, Y.Z. - WANG, Z.H. - LI, L. - YANG, D. - WANG, S.J. - CHEN, X.H. Modelling on GaN Power HEMT with Condideration of Subthreshold Swing Using Artificial Intelligence Technology. In 17TH IEEE INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT 2019). 2019. SHI, Y.Y. - ZHOU, Q. - XIONG, W. - LIU, X. - MING, X. - LI, Z.J. - CHEN, W.J. - ZHANG, B. Observation of self-recoverable gate degradation in p-GaN AlGaN/GaN HEMTs after long-term forward gate stress: The trapping & detrapping dynamics of hole/electron. In 2019 31ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD). ISSN 1063-6854, 2019, p. 423-426. MOENS, P. - STOCKMAN, A. A Physical-Statistical Approach to AlGaN/GaN HEMT Reliability. In 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). ISSN 1541-7026, 2019. STOFFELS, S. - POSTHUMA, N. - DECOUTERE, S. - BAKEROOT, B. - TALLARICO, A.N. - SANGIORGI, E. - FIEGNA, C. - ZHENG, J. - MA, X. - BORGA, M. - FABRIS, E. - MENEGHINI, M. - ZANONI, E. - MENEGHESSO, G. - PRIESOL, J. - SATKA, A. Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability. In 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). ISSN 1541-7026, 2019. LONGOBARDI, Giorgia - EFTHYMIOU, Loizos - ARNOLD, Martin. GaN power devices for Electric Vehicles State-of-the-art and future perspective. In 2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles and International Transportation Electrification Conference, ESARS-ITEC 2018, 2019-01-09, pp. WANG, J. - CHEN, Z.F. - YOU, S.Z. - ZHOU, W.Y. - BAKEROOT, B. - LIU, J. - SUN, L.L. - DECOUTERE, S. Surface-Potential-Based Compact Model for the Gate Current of p-GaN Gate HEMTs. In IEEE TRANSACTIONS ON ELECTRON DEVICES. ISSN 0018-9383, SEPT 2020, vol. 67, no. 9, p. 3564-3567. TANG, X. - QIU, R. - LIU, Y.H. - LI, B.K. Thermally enhanced hole injection and breakdown in a Schottky-metal/p-GaN/AlGaN/GaN device under forward bias. In APPLIED PHYSICS LETTERS. ISSN 0003-6951, JUL 27 2020, vol. 117, no. 4. HE, J.B. - WEI, J. - LI, Y. - ZHENG, Z.Y. - YANG, S. - HUANG, B.L. - CHEN, K.J. Characterization and analysis of low-temperature time-to-failure behavior in forward-biased Schottky-type p-GaN gate HEMTs. In APPLIED PHYSICS LETTERS. ISSN 0003-6951, JUN 1 2020, vol. 116, no. 22. SUBRAMANIAN, B. - ANANDAN, M. - VEERAPPAN, S. - PANNEERSELVAM, M. - WASIM, M. - RADHAKRISHNAN, S.K. - PECHIMUTHU, P. - VERMA, Y.K. - VIVEKANANDHAN, S.N. - RAJU, E. Switching Transient Analysis and Characterization of an E-Mode B-Doped GaN-Capped AlGaN DH-HEMT with a Freewheeling Schottky Barrier Diode (SBD). In JOURNAL OF ELECTRONIC MATERIALS. ISSN 0361-5235, JUL 2020, vol. 49, no. 7, p. 4091-4099. WANG, C.C. - HUA, M.Y. - CHEN, J.T. - YANG, S. - ZHENG, Z.Y. - WEI, J. - ZHANG, L. - CHEN, K.J. E-Mode p-n Junction/AlGaN/GaN (PNJ) HEMTs. In IEEE ELECTRON DEVICE LETTERS. ISSN 0741-3106, APR 2020, vol. 41, no. 4, p. 545-548. WANG, W.F. - WANG, J.F. - ZHANG, Y.M. - LI, T.K. - XIONG, R. - XU, K. Fabrication and characterization of vertical GaN Schottky barrier diodes with boron-implanted termination. In CHINESE PHYSICS B. ISSN 1674-1056, MAR 2020, vol. 29, no. 4. ZHOU, G.N. - WAN, Z.Y. - YANG, G.Y. - JIANG, Y. - SOKOLOVSKIJ, R. - YU, H.Y. - XIA, G.R. Gate Leakage Suppression and Breakdown Voltage Enhancement in p-GaN HEMTs Using Metal/Graphene Gates. In IEEE TRANSACTIONS ON ELECTRON DEVICES. ISSN 0018-9383, MAR 2020, vol. 67, no. 3, p. 875-880. WAN, L.J. - SUN, P.Y. - LIU, X.Y. - CHEN, D.B. - QUE, X.F. - YAO, S.N. - LI, G.Q. A highly efficient method to fabricate normally-off AlGaN/GaN HEMTs with low gate leakage via Mg diffusion. In APPLIED PHYSICS LETTERS. ISSN 0003-6951, JAN 13 2020, vol. 116, no. 2. CHEN, T.Y. - CAICEDO-NARVAEZ, C. - CHEN, P.Y. - PARSAPOUR, A. - FAHIMI, B. Design of a 6.8-kW Two-Phase Converter for 48V Automotive Applications. In 2020 THIRTY-FIFTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2020). ISSN 1048-2334, 2020, p. 2455-2461. HAMZA, K.H. - NIRMAL, D. - ARIVAZHAGAN, L. Impact of AlGaN Back Barrier in AlGaN/GaN HEMT on GaN substrate. In 2020 5TH INTERNATIONAL CONFERENCE ON DEVICES, CIRCUITS AND SYSTEMS (ICDCS' 20). ISSN 2470-847X, 2020, p. 290-293. KINI, R.L. - DHAKAL, S. - MAHMUD, S. - SELLERS, A.J. - HONTZ, M.R. - TINE, C.A. - KHANNA, R. An Investigation of Frequency Dependent Reliability and Failure Mechanism of pGaN Gated GaN HEMTs. In IEEE ACCESS. ISSN 2169-3536, 2020, vol. 8, p. 137312-137321. ROY, C. - PARKHIDEH, B. Design Consideration for Characterization and Study of Dynamic On State Resistance of GaN Devices. In 2019 IEEE 7TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA 2019). 2019, p. 181-186. LIU, Chia Hao - CHIU, Hsien Chin - WANG, Hsiang Chun - KAO, Hsuan Ling - HAUNG, Chong Rong. Improved Gate Reliability Normally-Off p-GaN/AlN/AlGaN/GaN HEMT with AlGaN Cap-Layer. In CS MANTECH 2021 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers, 2021-01-01, pp. 89-92. MAO, Mao - TANG, Sha - WANG, Zhizhe - DENG, Rui - DENG, Chuanjin - CHEN, Si - REN, Yan. Effect of Temperature Cycling, High Temperature Storage and Steady-State Operation Life Test on Reliability of GaN HEMTs. In 2021 22nd International Conference on Electronic Packaging Technology, ICEPT 2021, 2021-09-14, pp. Dostupné na: https://doi.org/10.1109/ICEPT52650.2021.9568117. TSAI, W.S. - QIN, Z.W. - HSIN, Y.M. Design of Hybrid Schottky-Ohmic Gate in Normally-Off p-GaN Gate AlGaN/GaN HEMTs. In ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. ISSN 2162-8769, DEC 1 2021, vol. 10, no. 12. MILLESIMO, M. - FIEGNA, C. - POSTHUMA, N. - BORGA, M. - BAKEROOT, B. - DECOUTERE, S. - TALLARICO, A.N. High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs. In IEEE TRANSACTIONS ON ELECTRON DEVICES. ISSN 0018-9383, NOV 2021, vol. 68, no. 11, p. 5701-5706. CHIU, H.C. - LIU, C.H. - HUANG, C.R. - CHIU, C.C. - WANG, H.C. - KAO, H.L. - LIN, S.Y. - CHIEN, F.T. Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al2O3/AlN Composite Gate Insulator. In MEMBRANES. OCT 2021, vol. 11, no. 10. LIU, C.H. - CHIU, H.C. - WANG, H.C. - KAO, H.L. - HUANG, C.R. Improved Gate Reliability Normally-Off p-GaN/AlN/AlGaN/GaN HEMT With AlGaN Cap-Layer. In IEEE ELECTRON DEVICE LETTERS. ISSN 0741-3106, OCT 2021, vol. 42, no. 10, p. 1432-1435. WANG, H. - LIU, Y.H. - JI, F.W. - LI, H. - LI, B.K. - TANG, X. Investigation of the threshold voltage instability in normally-off p-GaN/AlGaN/GaN HEMTs by optical analysis. In JAPANESE JOURNAL OF APPLIED PHYSICS. ISSN 0021-4922, OCT 1 2021, vol. 60, no. 10. SONG, Y.L. - REDDY, M.K. - CHANG, L.M. - SHEU, G. Physics-Based TCAD Simulation and Calibration of 600 V GaN/AlGaN/GaN Device Characteristics and Analysis of Interface Traps. In MICROMACHINES. JUL 2021, vol. 12, no. 7. ZHONG, Y.Z. - SU, S. - CHEN, X. - ZHOU, Y. - GAO, H.W. - ZHAN, X.N. - GUO, X.L. - ZHANG, S.M. - SUN, Q. - YANG, H. Gate Reliability and Its Degradation Mechanism in the Normally OFF High-Electron-Mobility Transistors With Regrown p-GaN Gate. In IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS. ISSN 2168-6777, JUN 2021, vol. 9, no. 3, p. 3715-3724. DALCANALE, S. - UREN, M.J. - CHANG, J. - NAGAMATSU, K. - PARKE, J.A. - HOWELL, R.S. - KUBALL, M. Noise Analysis of the Leakage Current in Time-Dependent Dielectric Breakdown in a GaN SLCFET. In IEEE TRANSACTIONS ON ELECTRON DEVICES. ISSN 0018-9383, MAY 2021, vol. 68, no. 5, p. 2220-2225. HUA, M.Y. - WANG, C.C. - CHEN, J.T. - ZHAO, J.L. - YANG, S. - ZHANG, L. - ZHENG, Z.Y. - WEI, J. - CHEN, K.J. Gate Current Transport in Enhancement-Mode p-n Junction/AlGaN/GaN (PNJ) HEMT. In IEEE ELECTRON DEVICE LETTERS. ISSN 0741-3106, MAY 2021, vol. 42, no. 5, p. 669-672. LI, S. - LIU, S.Y. - ZHANG, C. - LI, N.B. - TAO, X.Y. - WEI, J.X. - ZHANG, L. - SUN, W.F. Investigations on Electrical Parameters Degradations of p-GaN HEMTs Under Repetitive UIS Stresses. In IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS. ISSN 2168-6777, APR 2021, vol. 9, no. 2, p. 2227-2234. SONG, S.D. - WU, S.Z. - LIU, G.Z. - ZHAO, W. - WANG, Y.Q. - WU, J.W. - HE, Q. Analysis on degradation mechanisms of normally-off p-GaN gate AlGaN/GaN high-electron mobility transistor*. In CHINESE PHYSICS B. ISSN 1674-1056, APR 2021, vol. 30, no. 4. ZHOU, G.N. - ZENG, F.M. - JIANG, Y. - WANG, Q. - JIANG, L.L. - XIA, G.R. - YU, H.Y. Determination of the Gate Breakdown Mechanisms in p-GaN Gate HEMTs by Multiple-Gate-Sweep Measurements. In IEEE TRANSACTIONS ON ELECTRON DEVICES. ISSN 0018-9383, APR 2021, vol. 68, no. 4, p. 1518-1523. JIANG, H.X. - ZHU, R.Q. - LYU, Q.F. - TANG, C.W. - LAU, K.M. Thin-barrier heterostructures enabled normally-OFF GaN high electron mobility transistors. In SEMICONDUCTOR SCIENCE AND TECHNOLOGY. ISSN 0268-1242, MAR 2021, vol. 36, no. 3. KIM, T.H. - JANG, W.H. - YIM, J.H. - CHA, H.Y. Unidirectional Operation of p-GaN Gate AlGaN/GaN Heterojunction FET Using Rectifying Drain Electrode. In MICROMACHINES. MAR 2021, vol. 12, no. 3. HE, J.Q. - CHENG, W.C. - WANG, Q. - CHENG, K. - YU, H.Y. - CHAI, Y. Recent Advances in GaN-Based Power HEMT Devices. In ADVANCED ELECTRONIC MATERIALS. ISSN 2199-160X, APR 2021, vol. 7, no. 4. BABA, S. - BACHMAN, S. - JASINSKI, M. - ZELECHOWSKI, M. WBG-Based PEBB Module for High Reliability Power Converters. In IEEE ACCESS. ISSN 2169-3536, 2021, vol. 9, p. 86488-86499. ZHANG, L. - ZHENG, Z.Y. - YANG, S. - SONG, W.J. - HE, J.B. - CHEN, K.J. p-GaN Gate HEMT With Surface Reinforcement for Enhanced Gate Reliability. In IEEE ELECTRON DEVICE LETTERS. ISSN 0741-3106, JAN 2021, vol. 42, no. 1, p. 22-25. SUN, S.Y. - ZHANG, J.S. - XIA, L. - WU, W.G. - WANG, J.Y. - JIN, Y.F. Impact of E-Mode Gallium Nitride High Electron Mobility Transistor with P-Type Gate on Waveform Distortion in an AirFuel Wireless Power Transfer System. In PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. ISSN 1862-6300, FEB 2021, vol. 218, no. 3, SI. MENEGHINI, Matteo - DE SANTI, Carlo - ABID, Idriss - BUFFOLO, Matteo - CIONI, Marcello - KHADAR, Riyaz Abdul - NELA, Luca - ZAGNI, Nicolo - CHINI, Alessandro - MEDJDOUB, Farid - MENEGHESSO, Gaudenzio - VERZELLESI, Giovanni - ZANONI, Enrico - MATIOLI, Elison. GaN-based power devices: Physics, reliability, and perspectives. In JOURNAL OF APPLIED PHYSICS, 2021, vol. 130, no. 18, pp. ISSN 0021-8979. Dostupné na: https://doi.org/10.1063/5.0061354. MANDAL, Manish - KISHORE ROY, Shamibrota - BASU, Kaushik. Comparison of Si SJMOS and SiC MOSFET for Single Phase PFC Application. In IECON Proceedings (Industrial Electronics Conference), 2022-01-01, 2022-October, pp. Dostupné na: https://doi.org/10.1109/IECON49645.2022.9968989. LIU, Chia Hao - CHIU, Hsien Chin - WANG, Hsiang Chun - HAUNG, Chong Rong. Hole Injection Effect and Dynamic Characteristics Analysis of Normally-Off p-GaN HEMT with AlGaN Cap layer on Low Resistivity SiC substrate. In 2022 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2022, 2022-01-01, pp. 379-382. ZHAO, Fangwei - LI, Yan - WEI, Chao - ZHANG, Nan - ZHENG, Yanxuan. Accurate Measurement of Dynamic on-Resistance of GaN Devices and Affecting Factor Analysis. In Diangong Jishu Xuebao/Transactions of China Electrotechnical Society, 2022-09-01, 37, 18, pp. 4664-4675. ISSN 10006753. Dostupné na: https://doi.org/10.19595/j.cnki.1000-6753.tces.211710. MENEGHINI, Matteo - CHOWDHURY, Srabanti - DERLUYN, Joff - MEDJDOUB, Farid - JI, Dong - CHUN, Jaeyi - KABOUCHE, Riad - DE SANTI, Carlo - ZANONI, Enrico - MENEGHESSO, Gaudenzio. GaN-Based Lateral and Vertical Devices. In Springer Handbooks, 2023-01-01, pp. 525-578. ISSN 25228692. Dostupné na: https://doi.org/10.1007/978-3-030-79827-7_15. CHEN, S.H. - CUI, P. - XU, M.S. - LIN, Z.J. - XU, X.G. - ZENG, Y.P. - HAN, J.S. Improved Electrical Performance of InAlN/GaN High Electron Mobility Transistors with Post Bis(trifluoromethane) Sulfonamide Treatment. In CRYSTALS. NOV 2022, vol. 12, no. 11. Dostupné na: https://doi.org/10.3390/cryst12111521. PU, T.F. - LIU, S.Q. - LI, X.B. - WANG, T.T. - DU, J.Y. - LI, L.A. - HE, L. - LIU, X.K. - AO, J.P. Normally-off ALGaN/GaN heterojunction field-effect transistors with in-situ ALN gate insulator. In CHINESE PHYSICS B. ISSN 1674-1056, NOV 1 2022, vol. 31, no. 12. Dostupné na: https://doi.org/10.1088/1674-1056/ac7a0e. LIU, S.Y. - ZHU, J.J. - GUO, J.S. - CHENG, K. - MI, M.H. - QIN, L.J. - LIU, J.L. - JIA, F.C. - LU, H. - MA, X.H. - HAO, Y. Improved Breakdown Voltage and Low Damage E-Mode Operation of AlON/AlN/GaN HEMTs Using Plasma Oxidation Treatment. In IEEE ELECTRON DEVICE LETTERS. ISSN 0741-3106, OCT 2022, vol. 43, no. 10, p. 1621-1624. Dostupné na: https://doi.org/10.1109/LED.2022.3203164. GUO, Y.J. - WANG, H.D. - CHEN, X. - GAO, H.W. - LI, F.Q. - ZHONG, Y.Z. - ZHOU, Y. - LI, Q. - LI, W.B. - SUN, Q. - YANG, H. Influence of Mg doping level at the initial growth stage on the gate reliability of p-GaN gate HEMTs. In JOURNAL OF PHYSICS D-APPLIED PHYSICS. ISSN 0022-3727, SEP 1 2022, vol. 55, no. 35. Dostupné na: https://doi.org/10.1088/1361-6463/ac761b. MOUNIKA, B. - AJAYAN, J. - BHATTACHARYA, S. - NIRMAL, D. Recent developments in materials, architectures and processing of AlGaN/GaN HEMTs for future RF and power electronic applications: A critical review. In MICRO AND NANOSTRUCTURES. AUG 2022, vol. 168. Dostupné na: https://doi.org/10.1016/j.micrna.2022.207317. HUANG, X.J. - XING, Y.H. - YU, G.H. - TANG, W.X. - WEI, X. - SONG, L. - ZHANG, X.D. - FAN, Y.M. - ZENG, Z.M. - CAI, Y. - ZHANG, B.S. - HUANG, Z.L. - HUANG, R. - HAN, J. The effect of SiN (x) film for H plasma implantation in p-GaN/AlGaN/GaN high electron mobility transistors. In APPLIED PHYSICS EXPRESS. ISSN 1882-0778, JUL 1 2022, vol. 15, no. 7. Dostupné na: https://doi.org/10.35848/1882-0786/ac7a90. LIU, K. - WANG, R.H. - WANG, C. - ZHENG, X.F. - MA, X.H. - BAI, J.C. - CHENG, B. - LIU, R.Y. - LI, A. - ZHAO, Y.P. - HAO, Y. The influence of lightly doped p-GaN cap layer on p-GaN/AlGaN/GaN HEMT. In SEMICONDUCTOR SCIENCE AND TECHNOLOGY. ISSN 0268-1242, JUL 1 2022, vol. 37, no. 7. Dostupné na: https://doi.org/10.1088/1361-6641/ac643f. HUANG, X.J. - XING, Y.H. - YU, G.H. - SONG, L. - HUANG, R. - HUANG, Z.L. - HAN, J. - ZHANG, B.S. - FAN, Y.M. Study on H plasma treatment enhanced p-GaN gate AlGaN/GaN HEMT with block layer. In ACTA PHYSICA SINICA. ISSN 1000-3290, MAY 20 2022, vol. 71, no. 10. Dostupné na: https://doi.org/10.7498/aps.71.20212192. WANG, H.C. - LIU, C.H. - HUANG, C.R. - CHIU, H.C. - KAO, H.L. - LIU, X.K. Hole Injection Effect and Dynamic Characteristic Analysis of Normally Off p-GaN HEMT with AlGaN Cap Layer on Low-Resistivity SiC Substrate. In MICROMACHINES. MAY 2022, vol. 13, no. 5. Dostupné na: https://doi.org/10.3390/mi13050807. QIN, Z.W. - TSAI, W.H. - CHEN, W.C. - LO, H.H. - HSIN, Y.M. I-V Characteristics of E-mode GaN-based transistors under gate floating. In SEMICONDUCTOR SCIENCE AND TECHNOLOGY. ISSN 0268-1242, APR 1 2022, vol. 37, no. 4. Dostupné na: https://doi.org/10.1088/1361-6641/ac5105. WANG, H. - LIN, Y. - JIANG, J.S. - DONG, D. - JI, F.W. - ZHANG, M. - JIANG, M. - GAN, W. - LI, H. - WANG, M.J. - WEI, J. - LI, B.K. - TANG, X. - HU, C.G. - CAO, W.P. Investigation of Thermally Induced Threshold Voltage Shift in Normally-OFF p-GaN Gate HEMTs. In IEEE TRANSACTIONS ON ELECTRON DEVICES. ISSN 0018-9383, MAY 2022, vol. 69, no. 5, p. 2287-2292. Dostupné na: https://doi.org/10.1109/TED.2022.3157805. ZHOU, G.N. - ZENG, F.M. - GAO, R.Y. - WANG, Q. - CHENG, K. - LI, L.Q. - XIANG, P. - DU, F.Z. - XIA, G.R. - YU, H.Y. p-GaN Gate HEMTs With 10.6 V Maximum Gate Drive Voltages by Mg Doping Engineering. In IEEE TRANSACTIONS ON ELECTRON DEVICES. ISSN 0018-9383, MAY 2022, vol. 69, no. 5, p. 2282-2286. Dostupné na: https://doi.org/10.1109/TED.2022.3157569. TANG, J.L. - LIU, C. Removal of GaN film over AlGaN with inductively coupled BCl3/Ar atomic layer etch. In CHINESE PHYSICS B. ISSN 1674-1056, JAN 1 2022, vol. 31, no. 1. Dostupné na: https://doi.org/10.1088/1674-1056/ac032d. TANG, X. - LIU, Y.H. - WANG, H. - DONG, D. - YIN, Y.L. - LIN, Y. - LI, H.R. - CHEN, P.F. - LI, H. - HUANG, Z. - CAO, W.P. - LI, B.K. - HU, C.G. On the physics link between time-dependent gate breakdown and electroluminescence in Schottky-type p-GaN gate HEMTs. In 2022 IEEE 34TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD). ISSN 1063-6854, 2022, p. 57-60. Dostupné na: https://doi.org/10.1109/ISPSD49238.2022.9813615. ZENG, C.K. - XU, W.Z. - XIA, Y.Y. - WANG, K. - REN, F.F. - ZHOU, D. - LI, Y.H. - ZHU, T.G. - CHEN, D.J. - ZHANG, R. - ZHENG, Y.D. - LU, H. Normally-off GaN HEMTs with InGaN p-gate cap layer formed by polarization doping. In APPLIED PHYSICS EXPRESS. ISSN 1882-0778, JAN 1 2022, vol. 15, no. 1. Dostupné na: https://doi.org/10.35848/1882-0786/ac407e. MENEGHINI, Matteo - CHOWDHURY, Srabanti - DERLUYN, Joff - MEDJDOUB, Farid - JI, Dong - CHUN, Jaeyi - KABOUCHE, Riad - DE SANTI, Carlo - ZANONI, Enrico - MENEGHESSO, Gaudenzio. GaN-Based Lateral and Vertical Devices. In Springer Handbooks, 2023-01-01, pp. 525-578. ISSN 25228692. Dostupné na: https://doi.org/10.1007/978-3-030-79827-7_15. ZHAO, Pengfei - ZHA, Zhiwei - XIAO, Qingzhong - CHEN, Jian - ZHU, Jianyuan - FU, Zhiwei - CHEN, Yiqiang. Degradation Behavior and Mechanism of E-mode Cascode GaN HEMTs under Hydrogen Environment. In 2023 International Conference on Power Energy Systems and Applications, ICoPESA 2023, 2023-01-01, pp. 728-732. Dostupné na: https://doi.org/10.1109/ICoPESA56898.2023.10140342. WANG, Huan - YIN, Yulian - JI, Fengwei - DU, Jiahong - LI, Haoran - ZHAO, Changhui - LI, Baikui - HU, Cungang - CAO, Wenping - TANG, Xi - YANG, Shu. Enhanced gate breakdown and electroluminescence in p-GaN gate HEMTs under pulsed switching conditions. In Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 2023-01-01, 2023-May, pp. 91-94. ISSN 10636854. Dostupné na: https://doi.org/10.1109/ISPSD57135.2023.10147654. WANG, Bixuan - ZHANG, Ruizhe - WANG, Hengyu - HE, Quanbo - SONG, Qihao - LI, Qiang - UDREA, Florin - ZHANG, Yuhao. Gate Lifetime of P-Gate GaN HEMT in Inductive Power Switching. In Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 2023-01-01, 2023-May, pp. 20-23. ISSN 10636854. Dostupné na: https://doi.org/10.1109/ISPSD57135.2023.10147610. BANU, N. - MONDAL, C. Reduction of Current-Collapsing in Small Gate to Drain Length AlGaN/GaN Super Hetero-Junction HEMT for High-Frequency Applications. In Lecture Notes in Networks and Systems, 2023-01-01, 690 LNNS, pp. 423-431. ISSN 23673370. Dostupné na: https://doi.org/10.1007/978-981-99-2680-0_37. WANG, Bixuan - ZHANG, Ruizhe - SONG, Qihao - LI, Qiang - ZHANG, Yuhao. Gate Lifetime of P-Gate GaN HEMT under DC and Switching Overvoltage Stress. In 2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023, 2023-01-01, pp. Dostupné na: https://doi.org/10.1109/WiPDA58524.2023.10382229. GUNAYDIN, Y. - JAHDI, S. - YU, R. - YUAN, X.B. - ALATISE, O. - GONZALEZ, J.O. Electrothermal power cycling of GaN and SiC cascode devices. In MICROELECTRONICS RELIABILITY. ISSN 0026-2714, NOV 2023, vol. 150. Dostupné na: https://doi.org/10.1016/j.microrel.2023.115117. JIA, M. - HOU, B. - YANG, L. - JIA, F.C. - NIU, X.R. - DU, J.L. - CHANG, Q.Y. - ZHANG, M. - WU, M. - ZHANG, X.C. - LU, H. - MA, X.H. - HAO, Y. High VsubTH/sub and Improved Gate Reliability in P-GaN Gate HEMTs With Oxidation Interlayer. In IEEE ELECTRON DEVICE LETTERS. ISSN 0741-3106, SEP 2023, vol. 44, no. 9, p. 1404-1407. Dostupné na: https://doi.org/10.1109/LED.2023.3295064. KOZAK, J.P. - ZHANG, R.Z. - PORTER, M. - SONG, Q.H. - LIU, J.C. - WANG, B.X. - WANG, R. - SAITO, W. - ZHANG, Y.H. Stability, Reliability, and Robustness of GaN Power Devices: A Review. In IEEE TRANSACTIONS ON POWER ELECTRONICS. ISSN 0885-8993, JUL 2023, vol. 38, no. 7, p. 8442-8471. Dostupné na: https://doi.org/10.1109/TPEL.2023.3266365. PAN, S.J. - ZHANG, Y.M. - FENG, S.W. - LI, X. - BAI, K. - LU, X.Z. - ZHANG, M. - ZHOU, Z. Evaluation of Trapping Behaviors in Forward Biased Schottky-Type p-GaN Gate HEMTs. In IEEE TRANSACTIONS ON ELECTRON DEVICES. ISSN 0018-9383, JUL 2023, vol. 70, no. 7, p. 3475-3482. Dostupné na: https://doi.org/10.1109/TED.2023.3278614. HUANG, K.N. - LIN, Y.C. - WU, C.Y. - LEE, J.H. - HSU, C.C. - YAO, J.N. - CHIEN, C.H. - CHANG, E.Y. Study of p-GaN Gate MOS-HEMT with Alsub2/subOsub3/sub Insulator for High-Power Applications. In JOURNAL OF ELECTRONIC MATERIALS. ISSN 0361-5235, APR 2023, vol. 52, no. 4, p. 2865-2870. Dostupné na: https://doi.org/10.1007/s11664-023-10252-w. BABY, R. - RESHMA, K. - CHANDRASEKAR, H. - MURALIDHARAN, R. - RAGHAVAN, S. - NATH, D.N. Study of TaN-Gated p-GaN E-Mode HEMT. In IEEE TRANSACTIONS ON ELECTRON DEVICES. ISSN 0018-9383, APR 2023, vol. 70, no. 4, p. 1607-1612. Dostupné na: https://doi.org/10.1109/TED.2023.3241132. WANG, B.X. - ZHANG, R.Z. - WANG, H.Y. - HE, Q.B. - SONG, Q.H. - LI, Q. - UDREA, F. - ZHANG, Y.H. Dynamic Gate Breakdown of p-Gate GaN HEMTs in Inductive Power Switching. In IEEE ELECTRON DEVICE LETTERS. ISSN 0741-3106, FEB 2023, vol. 44, no. 2, p. 217-220. Dostupné na: https://doi.org/10.1109/LED.2022.3227091. CHAO, X. - TANG, C.K. - TAN, J.J. - WANG, C. - SUN, Q.Q. - ZHANG, D.W. Investigation of the Progressive Gate Breakdown Behaviors in p-GaN Gate HEMTs. In IEEE TRANSACTIONS ON ELECTRON DEVICES. ISSN 0018-9383, JAN 2023, vol. 70, no. 1, p. 25-30. Dostupné na: https://doi.org/10.1109/TED.2022.3220498. Kategória ADCA - Vedecké práce v zahraničných karentovaných časopisoch impaktovaných Kategória (od 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Typ výstupu článok Rok vykazovania 2016 Registrované v WOS Registrované v SCOPUS Registrované v CCC DOI 10.1109/LED.2016.2535133 
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Názov súboru Prístup Veľkosť Stiahnuté Typ Licence Gate Reliability Investigation in Normally-Off p.pdf Neprístupný/archív 751.9 KB 0 Vydavateľská verzia rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2016 2015 2.528 Q1 1.607 Q1
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