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High-power SiO2/AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors
Názov High-power SiO2/AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors Autor Kordoš Peter SAVELEK - Elektrotechnický ústav SAV Spoluautori Heidelberg G. Bernát J. Fox A. Marso M. Luth H. Zdroj.dok. . Vol. 87 (2005), p. 143501-143504 Applied Physics Letters Jazyk dok. eng - angličtina Krajina US - Spojené štáty Druh dok. rozpis článkov z periodík (rbx) Ohlasy CHENG, K. - LEYS, M. - DERLUYN, J. - DEGROOTE, S. - XIAO, D.P. - LORENZ, A. - BOEYKENS, S. - GERMAIN, M. - BORGHS, G. JOURNAL OF CRYSTAL GROWTH. ISSN 0022-0248, JAN 2007, vol. 298, Sp. Iss. SI, p. 822-825. SELVARAJ, S.L. - EGAWA, T. APPLIED PHYSICS LETTERS. ISSN 0003-6951, NOV 6 2006, vol. 89, no. 19. FAN, Q. - LEACH, J.H. - WU, M. - XIAO, B. - GU, X. - MORKOC, H. - HANDEL, P.H. In GALLIUM NITRIDE MATERIALS AND DEVICES III. 2008, vol. 6894, p. 89426-89426. YUE, Y.Z. - HAO, Y. - ZHANG, J.C. - NI, J.Y. - MAO, W. - FENG, Q. - LIU, L.J. In IEEE ELECTRON DEVICE LETTERS. 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In JAPANESE JOURNAL OF APPLIED PHYSICS. ISSN 0021-4922, JUL 1 2022, vol. 61, no. SH. Dostupné na: https://doi.org/10.35848/1347-4065/ac5d13. UPADHYAY, B.B. - SURAPANENI, S. - YADAV, Y.K. - BHARDWAJ, N. - SUVACHINTAK, N. - GANGULY, S. - SAHA, D. High-Performance GaN HEMTs with I (ON)/I (OFF) approximate to 10(10) and Gate Leakage Current <10(-11) A mm(-1) Using Ta2O5 Dielectric. In PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. ISSN 1862-6300, JUN 2022, vol. 219, no. 12. Dostupné na: https://doi.org/10.1002/pssa.202100839. MOSBAHI, H. - ESSAOUDI, A. - GORJI, N.E. - GASSOUMI, A. - ALMOHAMMEDI, A. - HELALI, A. - GASSOUMI, M. Colossal permittivity, impedance analysis and electric properties in AlGaN/GaN HEMTs. In JOURNAL OF OVONIC RESEARCH. ISSN 1842-2403, NOV-DEC 2023, vol. 19, no. 6, p. 763-773. Dostupné na: https://doi.org/10.15251/JOR.2023.196.763. MANSUROV, V. - MALIN, T. - GOLYASHOV, V. - MILAKHIN, D. - ZHURAVLEV, K. 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ISSN 0031-8949, JAN 1 2023, vol. 98, no. 1. Dostupné na: https://doi.org/10.1088/1402-4896/aca438. BHARDWAJ, N. - UPADHYAY, B.B. - YADAV, Y.K. - SURAPANENI, S. - GANGULY, S. - SAHA, D. Thermally grown Nb-oxide for GaN-based MOS-diodes. In APPLIED SURFACE SCIENCE. ISSN 0169-4332, JAN 15 2022, vol. 572. Dostupné na: https://doi.org/10.1016/j.apsusc.2021.151332. Kategória ADCA - Vedecké práce v zahraničných karentovaných časopisoch impaktovaných Kategória (od 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Typ výstupu článok Rok vykazovania 2005 
článok
rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2005 2004 4.308
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