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AlGaN/GaN HEMT based hydrogen sensors with gate absorption layers formed by high temperature oxidation
Názov AlGaN/GaN HEMT based hydrogen sensors with gate absorption layers formed by high temperature oxidation Autor Rýger Ivan 1987 SAVELEK - Elektrotechnický ústav SAV Spoluautori Vanko Gabriel 1981 SAVELEK - Elektrotechnický ústav SAV ORCID Kunzo Pavol 1985 SAVELEK - Elektrotechnický ústav SAV Lalinský Tibor 1951 SAVELEK - Elektrotechnický ústav SAV Vallo Martin SAVELEK - Elektrotechnický ústav SAV Pleceník A. Satrapinsky L. Pleceník T. Zdroj.dok. Procedia Engineering. Vol. 47, (2012), p. 518-521 Jazyk dok. eng - angličtina Druh dok. rozpis článkov z periodík (rbx) Ohlasy Zhu, Y.-X., Wang, Y.-H., Song, H.-H., Li, L.-L., Shi, D. Faguang Xuebao/Chinese Journal of Luminescence 37 (2016), pp. 1545-1553 SHARMA, N. - PERIASAMY, C. - CHATURVEDI, N. In JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS. DEC 2016, vol. 11, no. 6, p. 694-701. SURIA, A.J. - YALAMARTHY, A.S. - SO, H. - SENESKY, D.G. In SEMICONDUCTOR SCIENCE AND TECHNOLOGY. NOV 2016, vol. 31, no. 11. HALFAYA, Y. - BISHOP, C. - SOLTANI, A. - SUNDARAM, S. - AUBRY, V. - VOSS, P.L. - SALVESTRINI, J.P. - OUGAZZADEN, A. In SENSORS. MAR 2016, vol. 16, no. 3. CHEN, Jinlong - YAN, Dawei - WANG, Xueming - FU, Yajun - WU, Weidong - CAO, Linhong. Influence of Temperature on Sensitivity of AlGaN/GaN Hinf2/inf-Sensor Based on High Electron Mobility Transistor. In Zhenkong Kexue yu Jishu Xuebao/Journal of Vacuum Science and Technology. ISSN 16727126, 2020-01-01, 40, 1, pp. 12-16. SHARMA, N. - CHATURVEDI, N. - MISHRA, S. - SINGH, K. - CHATURVEDI, N. - CHAUHAN, A. - PERIASAMY, C. - KHARBANDA, D.K. - PARJAPAT, P. - KHANNA, P.K. High-Resolution AlGaN/GaN HEMT-Based Electrochemical Sensor for Biomedical Applications. In IEEE TRANSACTIONS ON ELECTRON DEVICES. ISSN 0018-9383, JAN 2020, vol. 67, no. 1, p. 289-295. SHARMA, Niketa - GUPTA, Yogendra - SHARMA, Ashish - SHARMA, Harish. Thermal Modeling of the GaN HEMT Device Using Decision Tree Machine Learning Technique. In Lecture Notes in Networks and Systems. ISSN 23673370, 2021-01-01, 204, pp. 13-20. Dostupné na: https://doi.org/10.1007/978-981-16-1089-9_2. UPADHYAY, Kavita T. - CHATTOPADHYAY, Manju K. Sensor applications based on AlGaN/GaN heterostructures. In MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2021, vol. 263, no., pp. ISSN 0921-5107. Dostupné na: https://doi.org/10.1016/j.mseb.2020.114849. PAL, Praveen - PRATAP, Yogesh - GUPTA, Mridula - KABRA, Sneha. Analytical Modeling and Simulation of AlGaN/GaN MOS-HEMT for High Sensitive pH Sensor. In IEEE SENSORS JOURNAL, 2021, vol. 21, no. 12, pp. 12998-13005. ISSN 1530-437X. Dostupné na: https://doi.org/10.1109/JSEN.2021.3069243. AJAYAN, J. - NIRMAL, D. - RAMESH, R. - BHATTACHARYA, Sandip - TAYAL, Shubham - JOSEPH, L. M. I. Leo - THOUTAM, Laxman Raju - AJITHA, D. A critical review of AlGaN/GaN-heterostructure based Schottky diode/HEMT hydrogen (H-2) sensors for aerospace and industrial applications. In MEASUREMENT, 2021, vol. 186, no., pp. ISSN 0263-2241. Dostupné na: https://doi.org/10.1016/j.measurement.2021.110100. GUPTA, Yogendra - SHARMA, Niketa - SHARMA, Ashish - SHARMA, Harish. Machine learning algorithms for semiconductor device modeling. In VLSI and Hardware Implementations using Modern Machine Learning Methods, 2022-01-19, pp. 163-179. Dostupné na: https://doi.org/10.1201/9781003201038-9. Kategória ADMB - Vedecké práce v zahraničných neimpaktovaných časopisoch registrovaných vo WOS Core Collection alebo SCOPUS Kategória (od 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Typ výstupu článok Rok vykazovania 2013 Registrované v WOS Registrované v SCOPUS DOI 10.1016/j.proeng.2012.09.198 
článok
rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore N rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2012 2011 0.237
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