Počet záznamov: 1
Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation
Názov Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation Autor Asubar J.T. Spoluautori Yatabe Z. Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV ORCID Hashizume T. Zdroj.dok. Journal of Applied Physics. Vol. 129 (2021), no. 121102 Jazyk dok. eng - angličtina Druh dok. rozpis článkov z periodík (rbx) Ohlasy SHI, Wen - JIANG, Qimeng - LUAN, Tiantian - HUANG, Sen - WANG, Xinhua - GUO, Fuqiang - YAO, Yixu - DENG, Kexin - BI, Lan - FAN, Jie - YIN, Haibo - WEI, Ke - XIONG, Wenjuan - LI, Yankui - JIANG, Haojie - LI, Junfeng - LIU, Xinyu. Implementation of RTCVD-SiNx Gate Dielectric Into Enhancement-Mode GaN MIS-HEMTs Fabricated on Ultrathin-Barrier AlGaN/GaN-on-Si Platform. In IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, vol. 68, no. 9, pp. 4274-4277. ISSN 0018-9383. Dostupné na: https://doi.org/10.1109/TED.2021.3088771. HIRAI, Hirohisa - MIURA, Yoshinao - NAKAJIMA, Akira - HARADA, Shinsuke - YAMAGUCHI, Hiroshi. Crystal-orientation-dependent flatband voltage of non-polar GaN MOS interfaces investigated using trench sidewall capacitors. In APPLIED PHYSICS LETTERS, 2021, vol. 119, no. 7, pp. ISSN 0003-6951. Dostupné na: https://doi.org/10.1063/5.0060415. NGUYEN, Duong Dai - ISODA, Takehiro - DENG, Yuchen - SUZUKI, Toshi-kazu. Normally-off operations in partially-gate-recessed AlTiO/AlGaN/GaN field-effect transistors based on interface charge engineering. In JOURNAL OF APPLIED PHYSICS, 2021, vol. 130, no. 1, pp. ISSN 0021-8979. Dostupné na: https://doi.org/10.1063/5.0054045. NABATAME, Toshihide - MAEDA, Erika - INOUE, Mari - HIROSE, Masafumi - OCHI, Ryota - SAWADA, Tomomi - IROKAWA, Yoshihiro - HASHIZUME, Tamotsu - SHIOZAKI, Koji - ONAYA, Takashi - TSUKAGOSHI, Kazuhito - KOIDE, Yasuo. Study of HfO 2-Based High-k Gate Insulators for GaN Power Device. In ECS Transactions, 2021-01-01, 104, 4, pp. 113-120. ISSN 19386737. Dostupné na: https://doi.org/10.1149/10404.0113ecst. HUANG, C.Y. - MAZUMDER, S. - LIN, P.C. - LEE, K.W. - WANG, Y.H. Improved Electrical Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Al2O3/ZrO2 Stacked Gate Dielectrics. In MATERIALS. OCT 2022, vol. 15, no. 19. Dostupné na: https://doi.org/10.3390/ma15196895. UENUMA, M. - KUWAHARADA, S. - TOMITA, H. - TANAKA, M. - SUN, Z.X. - HASHIMOTO, Y. - FUJII, M.N. - MATSUSHITA, T. - URAOKA, Y. Atomic structure analysis of gallium oxide at the Al2O3/GaN interface using photoelectron holography. In APPLIED PHYSICS EXPRESS. ISSN 1882-0778, AUG 1 2022, vol. 15, no. 8. Dostupné na: https://doi.org/10.35848/1882-0786/ac7dd9. SHIBATA, T. - UENUMA, M. - YAMADA, T. - YOSHITSUGU, K. - HIGASHI, M. - NISHIMURA, K. - URAOKA, Y. Effects of carbon impurity in ALD-Al2O3 film on HAXPES spectrum and electrical properties of Al2O3/AlGaN/GaN MIS structure. In JAPANESE JOURNAL OF APPLIED PHYSICS. ISSN 0021-4922, JUN 1 2022, vol. 61, no. 6. Dostupné na: https://doi.org/10.35848/1347-4065/ac646d. 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Názov súboru Prístup Veľkosť Stiahnuté Typ Licence Controlling surface interface states in GaNbased transistors.pdf Prístupný 9.7 MB 6 Vydavateľská verzia rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2021 2020 2.546 Q2 0.699 Q2
Počet záznamov: 1