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Interface engineered HfO2-based 3D vertical ReRAM
Názov Interface engineered HfO2-based 3D vertical ReRAM Autor Hudec Boris ORCID Spoluautori Wang I-T. Lai W.-L. Chang C.-C. Jančovič Peter 1990 SAVELEK - Elektrotechnický ústav SAV Fröhlich Karol 1954 SAVELEK - Elektrotechnický ústav SAV ORCID Mičušík Matej 1977- SAVPOLYM - Ústav polymérov SAV ORCID Omastová Mária 1962- SAVPOLYM - Ústav polymérov SAV ORCID Hou T.-H. Zdroj.dok. Journal of Physics D: Applied Physics. Vol. 49 (2016), no. 215102 Jazyk dok. eng - angličtina Druh dok. rozpis článkov z periodík (rbx) Ohlasy WANG, Y.P. - DING, Z.J. - LIU, Q.X. - LIU, W.J. - DING, S.J. - ZHANG, D.W. Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors. In JOURNAL OF MATERIALS CHEMISTRY C. DEC 21 2016, vol. 4, no. 47, p. 11059-11066. BANERJEE, W. - LIU, M. In 2017 7TH INTERNATIONAL SYMPOSIUM ON EMBEDDED COMPUTING AND SYSTEM DESIGN (ISED). 2017. YAN, X.B. - ZHOU, Z.Y. - DING, B.F. - ZHAO, J.H. - ZHANG, Y.Y. In JOURNAL OF MATERIALS CHEMISTRY C. MAR 7 2017, vol. 5, no. 9, p. 2259-2267. MUNJAL, S. - KHARE, N. In SCIENTIFIC REPORTS. SEP 29 2017, vol. 7. A. Azuma, R. Nakajima, H. Yoshida, T. Shimizu, T. Ito, and S. Shingubara Voltage Pulse Induced Resistance Change Response of ReRAM with HfO2 Layer IN ECS Trans, 2018, vol. 76, p. 13-21. BANERJEE, W. - LU, N.D. - YANG, Y. - LI, L. - LV, H.B. - LIU, Q. - LONG, S.B. - LIU, M. Investigation of Retention Behavior of TiOx/Al2O3 Resistive Memory and Its Failure Mechanism Based on Meyer-Neldel Rule. In IEEE TRANSACTIONS ON ELECTRON DEVICES. MAR 2018, vol. 65, no. 3, p. 957-962. ZHANG, H.H. - YOO, S. - MENZEL, S. - FUNCK, C. - CUPPERS, F. - WOUTERS, D.J. - HWANG, C.S. - WASER, R. - HOFFMANN-EIFERT, S. Understanding the Coexistence of Two Bipolar Resistive Switching Modes with Opposite Polarity in Pt/TiO2/Ti/Pt Nanosized ReRAM Devices. In ACS APPLIED MATERIALS & INTERFACES. SEP 5 2018, vol. 10, no. 35, p. 29766-29778. KUZMICHEV, D.S. - LEBEDINSKII, Y.Y. - HWANG, C.S. - MARKEEV, A.M. Atomic Layer Deposited Oxygen-Deficient TaOx Layers for Electroforming-Free and Reliable Resistance Switching Memory. In PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS. DEC 2018, vol. 12, no. 12. WANG, Q. - NIU, G. - ROY, S. - WANG, Y.K. - ZHANG, Y.J. - WU, H.P. - ZHAI, S.J. - BAI, W. - SHI, P. - SONG, S.N.A. - SONG, Z.T. - XIE, Y.H. - YE, Z.G. - WENGER, C. - MENG, X.J. - REN, W. Interface-engineered reliable HfO2-based RRAM for synaptic simulation. In JOURNAL OF MATERIALS CHEMISTRY C. OCT 28 2019, vol. 7, no. 40, p. 12682-12687. CHEN, Q.Y. - WANG, Z.W. - YU, M.X. - FANG, Y.C. - YU, Z.Z. - YANG, Y.C. - CAI, Y.M. - HUANG, R. Thermal effect in ultra-high density 3D vertical and horizontal RRAM array. In PHYSICA SCRIPTA. APR 2019, vol. 94, no. 4. LIN, C.Y. - PAN, C.H. - CHEN, P.H. - CHANG, T.C. - TSAI, T.M. - CHEN, C.K. - LIN, Y.H. - HUANG, W.C. - LIN, C.C. - CHEN, W.C. Predicting voltage induced positive-feedback effect on dynamic reset behavior in resistance switching device. In JOURNAL OF PHYSICS D-APPLIED PHYSICS. FEB 27 2019, vol. 52, no. 9. SHIMA, H. - TAKAHASHI, M. - NAITOH, Y. - AKINAGA, H. Electrode Material Dependence of Resistance Change Behavior in Ta2O5 Resistive Analog Neuromorphic Device. In IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2018, vol. 6, no. 1, p. 1220-1226. BANERJEE, Writam - LIU, Ming. Three-dimensional emerging nonvolatile memory for the high-density and neuromorphic applications. In 2017 7th International Symposium on Embedded Computing and System Design, ISED 2017, 2018-02-27, 2018-January, pp. 1-5. MUNJAL, S. - KHARE, N. Advances in resistive switching based memory devices. In JOURNAL OF PHYSICS D-APPLIED PHYSICS. ISSN 0022-3727, OCT 23 2019, vol. 52, no. 43. OU, Q.F. - XIONG, B.S. - YU, L. - WEN, J. - WANG, L. - TONG, Y. In-Memory Logic Operations and Neuromorphic Computing in Non-Volatile Random Access Memory. In MATERIALS. AUG 2020, vol. 13, no. 16. SUN, B. - RANJAN, S. - ZHOU, G. - GUO, T. - XIA, Y. - WEI, L. - ZHOU, Y. N. - WU, Y. A. Multistate resistive switching behaviors for neuromorphic computing in memristor. In MATERIALS TODAY ADVANCES, 2021, vol. 9, no., pp. ISSN 2590-0498. Dostupné na: https://doi.org/10.1016/j.mtadv.2020.100125. BILDER, C.R. - TEBBS, J.M. - MCMAHAN, C.S. Informative array testing with multiplex assays. In STATISTICS IN MEDICINE. ISSN 0277-6715, JUN 15 2021, vol. 40, no. 13, p. 3021-3034. CIANCI, Elena - SPIGA, Sabina. MOx materials by ALD method. In Metal Oxides for Non-volatile Memory: Materials, Technology and Applications, 2022-01-01, pp. 169-199. Dostupné na: https://doi.org/10.1016/B978-0-12-814629-3.00006-4. PARK, J. - KIM, T.H. - KWON, O. - ISMAIL, M. - MAHATA, C. - KIM, Y. - KIM, S. - KIM, S. Implementation of convolutional neural network and 8-bit reservoir computing in CMOS compatible VRRAM. In NANO ENERGY. ISSN 2211-2855, DEC 15 2022, vol. 104, B. Dostupné na: https://doi.org/10.1016/j.nanoen.2022.107886. PARK, J. - KIM, S. Improving endurance and reliability by optimizing the alternating voltage in Pt/ZnO/TiN RRAM. In RESULTS IN PHYSICS. ISSN 2211-3797, AUG 2022, vol. 39. Dostupné na: https://doi.org/10.1016/j.rinp.2022.105731. SEUL, H.J. - CHO, J.H. - HUR, J.S. - CHO, M.H. - CHO, M.H. - RYU, M.T. - JEONG, J.K. Improvement in carrier mobility through band-gap engineering in atomic-layer-deposited In-Ga-Zn-O stacks. In JOURNAL OF ALLOYS AND COMPOUNDS. ISSN 0925-8388, MAY 15 2022, vol. 903. Dostupné na: https://doi.org/10.1016/j.jallcom.2021.163876. YIN, Y.H. - SHEN, Y. - WANG, H. - CHEN, X. - SHAO, L. - HUA, W.Y. - WANG, J. - CUI, Y. In Situ Growth and Characterization of TiN/HfxZr1-xO2/TiN Ferroelectric Capacitors. In ACTA PHYSICO-CHIMICA SINICA. ISSN 1000-6818, MAY 15 2022, vol. 38, no. 5. Dostupné na: https://doi.org/10.3866/PKU.WHXB202006016. KINGRA, S.K. - PARMAR, V. - SURI, M. In-Memory Computation Based Mapping of Keccak-f Hash Function. In FRONTIERS IN NANOTECHNOLOGY. MAR 16 2022, vol. 4. Dostupné na: https://doi.org/10.3389/fnano.2022.841756. HUBBARD, W.A. - LODICO, J.J. - CHAN, H.L. - MECKLENBURG, M. - REGAN, B.C. Imaging Dielectric Breakdown in Valence Change Memory. In ADVANCED FUNCTIONAL MATERIALS. ISSN 1616-301X, JAN 2022, vol. 32, no. 2. Dostupné na: https://doi.org/10.1002/adfm.202102313. Kategória ADCA - Vedecké práce v zahraničných karentovaných časopisoch impaktovaných Kategória (od 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Typ výstupu článok Rok vykazovania 2016 Registrované v WOS Registrované v SCOPUS Registrované v CCC DOI 10.1088/0022-3727/49/21/215102 
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Názov súboru Prístup Veľkosť Stiahnuté Typ Licence Interface engineered HfO2-based 3D vertical ReRAM.pdf Neprístupný/archív 2.2 MB 1 Vydavateľská verzia rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2016 2015 2.772 Q1 0.886 Q1
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