Počet záznamov: 1  

Radiation hardness of GaAs sensors against gamma-rays, neutrons and electrons

  1. NázovRadiation hardness of GaAs sensors against gamma-rays, neutrons and electrons
    Autor Šagátová A.
    Spoluautori Zaťko Bohumír 1973 SAVELEK - Elektrotechnický ústav SAV    ORCID

    Dubecký František 1946 SAVELEK - Elektrotechnický ústav SAV

    Ly Anh T.

    Nečas V.

    Sedlačková K.

    Pavlovič M.

    Fulop M.

    Zdroj.dok. Applied Surface Science. Vol. 395 (2017), p. 66-71
    Jazyk dok.eng - angličtina
    Druh dok.rozpis článkov z periodík (rbx)
    OhlasyNI, W.J. - JING, H.T. - ZHANG, L.Y. - OU, L. Possible atmospheric-like neutron beams at CSNS. In RADIATION PHYSICS AND CHEMISTRY. NOV 2018, vol. 152, p. 43-48.
    TURKINGTON, G. - GAMAGE, K.A.A. - GRAHAM, J. Beta detection of strontium-90 and the potential for direct in situ beta detection for nuclear decommissioning applications. In NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT. DEC 11 2018, vol. 911, p. 55-65.
    TURKINGTON, Graeme - GAMAGE, Kelum A.A. - GRAHAM, James. Detection of strontium-90, a review and the potential for direct in situ detection. In 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2018 Proceedings, 2018-11-01, no. 8824504
    XU, Yun-Chuan - SONG, Chi - DING, Xiao-Yong - ZHAO, Yang - XU, Dui-Gong - ZHANG, Quan-Ping - ZHOU, Yuan-Lin. Tailoring lattices of Bi2WO6 crystals via Ce doping to improve the shielding properties against low-energy gamma rays. In JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS. ISSN 0022-3697, 2019, vol. 127, no., pp. 76-80.
    GEREMEW, A. K. - KARGAR, F. - ZHANG, E. X. - ZHAO, S. E. - AYTAN, E. - BLOODGOOD, M. A. - SALGUERO, T. T. - RUMYANTSEV, S. - FEDOSEYEV, A. - FLEETWOOD, D. M. - BALANDIN, A. A. Proton-irradiation-immune electronics implemented with two-dimensional charge-density-wave devices. In NANOSCALE. ISSN 2040-3364, 2019, vol. 11, no. 17, pp. 8380-8386.
    KRUCHONAK, U. - ABOU EL-AZM, S. - AFANACIEV, K. - CHELKOV, G. - DEMICHEV, M. - GOSTKIN, M. - GUSKOV, A. - FIRU, E. - KOBETS, V. - LEYVA, A. - NOZDRIN, A. - POROKHOVOY, S. - SHEREMETYEVA, A. - SMOLYANSKIY, P. - TORRES, A. - TYAZHEV, A. - TOLBANOV, O. - ZAMYATIN, N. - ZARUBIN, A. - ZHEMCHUGOV, A. Radiation hardness of GaAs: Cr and Si sensors irradiated by electron beam. In NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT. ISSN 0168-9002, SEP 21 2020, vol. 975.
    PENG, J.B. - ZOU, J.J. - TANG, B. - ZHU, Z.F. - CHEN, D.H. - DENG, W.J. - PENG, X.C. Effects of electron irradiation and thermal annealing on characteristics of semi -insulating gallium -arsenide alpha -particle detectors. In NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT. ISSN 0168-9002, JUL 21 2020, vol. 969.
    CHEN, J.Y. - DING, F. - LUO, X.C. - RAO, X.S. - SUN, J.N. Fundamental study of ductile-regime diamond turning of single crystal gallium arsenide. In PRECISION ENGINEERING-JOURNAL OF THE INTERNATIONAL SOCIETIES FOR PRECISION ENGINEERING AND NANOTECHNOLOGY. ISSN 0141-6359, MAR 2020, vol. 62, p. 71-82.
    SHEN, Y. - FANG, X. - DING, X. - XIAO, H.Y. - XIANG, X. - YANG, G.X. - JIANG, M. - ZU, X.T. - QIAO, L. Structural Features and Photoelectric Properties of Si-Doped GaAs under Gamma Irradiation. In NANOMATERIALS. FEB 2020, vol. 10, no. 2.
    HE, Jingxuan - SHEN, Ye - LI, Bo - XIANG, Xia - LI, Sean - FANG, Xuan - XIAO, Haiyan - ZU, Xiaotao - QIAO, Liang. A comparative study of the structural and optical properties of Si-doped GaAs under different ion irradiation. In OPTICAL MATERIALS, 2021, vol. 111, no., pp. ISSN 0925-3467. Dostupné na: https://doi.org/10.1016/j.optmat.2020.110611.
    SINGH, Christopher N. - LIU, Xiang-Yang - UBERUAGA, Blas Pedro - TOBIN, Stephen J. Reduction of bright exciton lifetimes by radiation-induced disorder. In PHYSICAL REVIEW MATERIALS, 2021, vol. 5, no. 7, pp. ISSN 2475-9953. Dostupné na: https://doi.org/10.1103/PhysRevMaterials.5.073802.
    CHAKRAVORTY, A. - DUFOUR, C. - MISHRA, A. - KANJILAL, D. - KABIRAJ, D. GaAs a model system to study the role of electron-phonon coupling on ionization stimulated damage recovery. In JOURNAL OF PHYSICS D-APPLIED PHYSICS. ISSN 0022-3727, DEC 15 2022, vol. 55, no. 50. Dostupné na: https://doi.org/10.1088/1361-6463/ac9c13.
    LIU, X.T. - LIU, N. - ZHANG, G.Q. - ZHANG, L.M. - WANG, T.S. Structural and optical changes in GaAs irradiated with 100 keV and 2 MeV protons. In JOURNAL OF PHYSICS D-APPLIED PHYSICS. ISSN 0022-3727, JUL 21 2022, vol. 55, no. 29. Dostupné na: https://doi.org/10.1088/1361-6463/ac6bcd.
    SINGH, C.N. - UBERUAGA, B.P. - TOBIN, S.J. - LIU, X.Y. Impact of radiation-induced point defects on thermal carrier decay processes in GaAs. In ACTA MATERIALIA. ISSN 1359-6454, JAN 1 2023, vol. 242. Dostupné na: https://doi.org/10.1016/j.actamat.2022.118480.
    KategóriaADCA - Vedecké práce v zahraničných karentovaných časopisoch impaktovaných
    Kategória (od 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Typ výstupučlánok
    Rok vykazovania2017
    Registrované vWOS
    Registrované vSCOPUS
    Registrované vCCC
    DOI 10.1016/j.apsusc.2016.08.167
    článok

    článok

    Názov súboruPrístupVeľkosťStiahnutéTypLicence
    Radiation hardness of GaAs sensors against gamma-rays, neutrons and electrons.pdfNeprístupný/archív859.2 KB1Vydavateľská verzia
    rokCCIFIF Q (best)JCR Av Jour IF PercSJRSJR Q (best)CiteScore
    A
    rok vydaniarok metrikyIFIF Q (best)SJRSJR Q (best)
    201720163.387Q10.958Q1
Počet záznamov: 1  

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