Počet záznamov: 1
Operando diagnostic detection of interfacial oxygen ‘breathing’ of resistive random access memory by bulk-sensitive hard X-ray photoelectron spectroscopy
Názov Operando diagnostic detection of interfacial oxygen ‘breathing’ of resistive random access memory by bulk-sensitive hard X-ray photoelectron spectroscopy Autor Niu G. Spoluautori Calka P. Huang P. Sharath S.U. Petzold S. Gloskovskii A. Fröhlich Karol 1954 SAVELEK - Elektrotechnický ústav SAV ORCID Zhao Yunpeng Kang J. Schubert M.A. Bärwolf F. Ren W. Ye Z.-G. Perez E. Wenger C. Alff L. Schroeder T. Zdroj.dok. Materials Research Letters. Vol. 7 (2019), p. 117-123 Jazyk dok. eng - angličtina Druh dok. rozpis článkov z periodík (rbx) Ohlasy SHEN, Zongjie - QI, Yanfei - MITROVIC, Ivona Z. - ZHAO, Cezhou - HALL, Steve - YANG, Li - LUO, Tian - HUANG, Yanbo - ZHAO, Chun. Effect of Annealing Temperature for Ni/AlOx/Pt RRAM Devices Fabricated with Solution-Based Dielectric. In MICROMACHINES, 2019, vol. 10, no. 7, pp. KIM, Jin-Ju - YOON, So-Jung - KIM, Yeriaron - MOON, Seung-Eon - YOON, Sung-Min. Device Feasibility of Ferroelectric Field-Effect Transistors Using Al-Doped HfO2 Gate Insulator Deposited with H2O Oxygen Precursor during Atomic Layer Deposition Process. In PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2021, vol. 218, no. 10, pp. ISSN 1862-6300. Dostupné na: https://doi.org/10.1002/pssa.202100006. GADDAM, Venkateswarlu - DAS, Dipjyoti - JEON, Sanghun. Insertion of HfO2 Seed/Dielectric Layer to the Ferroelectric HZO Films for Heightened Remanent Polarization in MFM Capacitors. In IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, vol. 67, no. 2, pp. 745-750. ISSN 0018-9383. Dostupné na: https://doi.org/10.1109/TED.2019.2961208. DITTMANN, Regina - MENZEL, Stephan - WASER, Rainer. Nanoionic memristive phenomena in metal oxides: the valence change mechanism. In ADVANCES IN PHYSICS, 2021, vol. 70, no. 2, pp. 155-349. ISSN 0001-8732. Dostupné na: https://doi.org/10.1080/00018732.2022.2084006. YIN, Yuhao - SHEN, Yang - WANG, Hu - CHEN, Xiao - SHAO, Lin - HUA, Wenyu - WANG, Juan - CUI, Yi. In Situ Growth and Characterization of TiN/HfxZr1-xO2/TiN Ferroelectric Capacitors. In ACTA PHYSICO-CHIMICA SINICA, 2022, vol. 38, no. 5, pp. ISSN 1000-6818. Dostupné na: https://doi.org/10.3866/PKU.WHXB202006016. MAHATA, C. - ISMAIL, M. - KIM, D.H. - KIM, S. Quantized synaptic characteristics in HfO2-nanocrystal based resistive switching memory. In JOURNAL OF MATERIALS RESEARCH AND TECHNOLOGY-JMR&T. ISSN 2238-7854, NOV-DEC 2022, vol. 21, p. 981-991. Dostupné na: https://doi.org/10.1016/j.jmrt.2022.09.095. GRONENBERG, O. - MARQUARDT, R. - LAMPRECHT, R. - EKICI, Y. - SCHURMANN, U. - KOHLSTEDT, H. - KIENLE, L. The impact of rapid thermal annealing for the ferroelectricity of undoped sputtered HfO2 and its wake-up effect. In JOURNAL OF APPLIED PHYSICS. ISSN 0021-8979, SEP 7 2022, vol. 132, no. 9. Dostupné na: https://doi.org/10.1063/5.0100562. Kategória ADCA - Vedecké práce v zahraničných karentovaných časopisoch impaktovaných Kategória (od 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Typ výstupu článok Rok vykazovania 2019 Registrované v WOS Registrované v SCOPUS Registrované v CCC DOI 10.1080/21663831.2018.1561535 
článok
Názov súboru Prístup Veľkosť Stiahnuté Typ Licence Operando diagnostic detection of interfacial oxygen breathing of resistive random access memory by bulk sensitive hard X ray photoelectron.pdf Prístupný 2.2 MB 0 Vydavateľská verzia rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2019 2018 7.440 Q1 2.627 Q1
Počet záznamov: 1