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Application of Ru-based gate materials for CMOS technology
Názov Application of Ru-based gate materials for CMOS technology Autor Ťapajna Milan 1977 SAVELEK - Elektrotechnický ústav SAV ORCID Spoluautori Písečný Pavol SAVELEK - Elektrotechnický ústav SAV Lupták Roman SAVELEK - Elektrotechnický ústav SAV Hušeková Kristína 1957 SAVELEK - Elektrotechnický ústav SAV Fröhlich Karol 1954 SAVELEK - Elektrotechnický ústav SAV ORCID Harmatha L. Hooker J.C. Roozeboom F. Jergel Matej 1954- SAVFYZIK - Fyzikálny ústav SAV SCOPUS RID ORCID Zdroj.dok. Materials science in semiconductor processing. Vol. 7, (2004), p. 271-276 Jazyk dok. eng - angličtina Krajina GB - Veľká Británia Druh dok. rozpis článkov z periodík (rbx) Ohlasy BUC, D. - STUCHLIKOVA, L. - HELMERSSON, U. - CHANG, W.H. - BELLO, I. CHEMICAL PHYSICS LETTERS. ISSN 0009-2614, OCT 5 2006, vol. 429, no. 4-6, p. 617-621. YIM, S.S. - LEE, M.S. - KIM, K.S. - KIM, K.B.APPLIED PHYSICS LETTERS. ISSN 0003-6951, AUG 28 2006, vol. 89, no. 9. LU, Y.K. - ZHU, W. - CHEN, X.F. - GOPALKRISHNAN, R. MICROELECTRONIC ENGINEERING. ISSN 0167-9317, FEB 2006, vol. 83, no. 2, p. 371-375. MANKE, C. - MIEDL, S. - BOISSIERE, O. - BAUMANN, P.K. - LINDNER, J. - SCHUMACHER, M. - BRODYANSKI, A. - SCHEIB, M. MICROELECTRONIC ENGINEERING. ISSN 0167-9317, DEC 2005, vol. 82, no. 3-4, Sp. Iss. SI, p. 242-247. LI, H. - FARMER, D.B. - GORDON, R.G. - LIN, Y. - VLASSAK, J. In JOURNAL OF THE ELECTROCHEMICAL SOCIETY. ISSN 0013-4651, 2007, vol. 154, no. 12, p. D642-D647. ZHANG, M. - CHEN, W. - DING, S.J. - WANG, X.P. - ZHANG, D.W. - WANG, L.K. In JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. ISSN 0734-2101, JUL-AUG 2007, vol. 25, no. 4, p. 775-780. PARK, S.J. - KIM, W.H. - MAENG, W.J. - YANG, Y.S. - PARK, C.G. - KIM, H. - LEE, K.N. - JUNG, S.W. - SEONG, W.K. In THIN SOLID FILMS. SEP 1 2008, vol. 516, no. 21, p. 7345-7349. Manke C.: Electrochemical Society Proc. 5 (2005) 207 Weber U.: Electrochemical Society Proc. 5 (2005) 293 YIM, S.S. - LEE, D.J. - KIM, K.S. - KIM, S.H. - YOON, T.S. - KIM, K.B. In JOURNAL OF APPLIED PHYSICS. JUN 1 2008, vol. 103, no. 11. LEE, D.J. - YIM, S.S. - KIM, K.S. - KIM, S.H. - KIM, K.B. In ELECTROCHEMICAL AND SOLID STATE LETTERS. 2008, vol. 11, no. 6, p. K61-K63. RANGAN, S. - BERSCH, E. - BARTYNSKI, R.A. - GARFUNKEL, E. - VESCOVO, E. In PHYSICAL REVIEW B. FEB 2009, vol. 79, no. 7. PARK, S.J. - KIM, W.H. - LEE, H.B.R. - MAENG, W.J. - KIM, H. In MICROELECTRONIC ENGINEERING. JAN 2008, vol. 85, no. 1, Sp. Iss. SI, p. 39-44. LEE, W.K. - WONG, H.Y. - CHAN, K.Y. - YONG, T.K. - YAP, S.S. - TOU, T.Y. In APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING. AUG 2010, vol. 100, no. 2, SI, p. 561-568. KUKLI, K. - RITALA, M. - KEMELL, M. - LESKELA, M. In JOURNAL OF THE ELECTROCHEMICAL SOCIETY. 2010, vol. 157, no. 1, p. D35-D40. Kumar, B.R., Rao, T.S.: Inter. J. Pure Appl. Sci Technol. 4 (2011) 105 PARK, J. - NOH, Y. - SONG, O. In KOREAN JOURNAL OF METALS AND MATERIALS. AUG 2012, vol. 50, no. 8, p. 557-562. NOH, Y. - YU, B. - YOO, K. - KO, M.J. - SONG, O. In KOREAN JOURNAL OF METALS AND MATERIALS. MAR 2012, vol. 50, no. 3, p. 243-247. PARK, T. - CHOI, D. - CHOI, H. - JEON, H. In PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. FEB 2012, vol. 209, no. 2, p. 302-305. PARK, T. - LEE, J. - PARK, J. - JEON, H. - JEON, H. - LEE, K.H. - CHO, B.C. - KIM, M.S. - AHN, H.B. In JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. JAN 2012, vol. 30, no. 1. SCHEUERMANN, A.G. - PRANGE, J.D. - GUNJI, M. - CHIDSEY, C.E.D. - MCINTYRE, P.C. In ENERGY & ENVIRONMENTAL SCIENCE. AUG 2013, vol. 6, no. 8, p. 2487-2496. PARK, T. - LEE, J. - PARK, J. - JEON, H. - JEON, H. In JAPANESE JOURNAL OF APPLIED PHYSICS. MAY 2013, vol. 52, no. 5, 4, SI. NOH, Y. - YOO, K. - KO, M.J. - SONG, O. In KOREAN JOURNAL OF METALS AND MATERIALS. MAR 2013, vol. 51, no. 3, p. 239-243. KIM, J.W. - KIM, B. - PARK, S.W. - KIM, W. - SHIM, J.H. Atomic layer deposition of ruthenium on plasma-treated vertically aligned carbon nanotubes for high-performance ultracapacitors. In NANOTECHNOLOGY. OCT 31 2014, vol. 25, no. 43. VASILYEV, V.Y. - MOROZOVA, N.B. - IGUMENOV, I.K. Chemical vapour-phase deposition of ruthenium-containing thin films. In RUSSIAN CHEMICAL REVIEWS. 2014, vol. 83, no. 8, p. 758-782. ZHANG, H.X. - ZHANG, C.M. - WANG, P.F. In 2015 China Semiconductor Technology International Conference. 2015, CSTIC 2015 7153392 NOMURA, K. - KONDO, Y. - KAWAE, T. - MORIMOTO, A. In ECS SOLID STATE LETTERS. 2015, vol. 4, no. 5, p. N1-N4. HWANG, S.M. - GARAY, A.A. - CHOI, J.H. - CHUNG, C.W. Etch characteristics of Ru thin films using O-2/Ar, CH4/Ar, and O-2/CH4/Ar plasmas. In THIN SOLID FILMS. SEP 30 2016, vol. 615, p. 311-317. CHIBA, H. - HIRANO, M. - KAWANO, K. - OSHIMA, N. - FUNAKUBO, H. In MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. NOV 1 2017, vol. 70, SI, p. 73-77. HAN, J.W. - JIN, H.S. - KIM, Y.J. - HEO, J.S. - KIM, W.H. - AHN, J.H. - KIM, J.H. - PARK, T.J. Advanced Atomic Layer Deposition: Ultrathin and Continuous Metal Thin Film Growth and Work Function Control Using the Discrete Feeding Method. In NANO LETTERS. ISSN 1530-6984, JUN 8 2022, vol. 22, no. 11, p. 4589-4595. Dostupné na: https://doi.org/10.1021/acs.nanolett.2c00811. HAN, J.W. - JIN, H.S. - KIM, Y.J. - HEO, J.S. - KIM, W.H. - AHN, J.H. - PARK, T.J. Advanced atomic layer deposition (ALD): controlling the reaction kinetics and nucleation of metal thin films using electric-potential-assisted ALD. In JOURNAL OF MATERIALS CHEMISTRY C. ISSN 2050-7526, MAR 16 2023, vol. 11, no. 11, p. 3743-3750. Dostupné na: https://doi.org/10.1039/d2tc04755a. Kategória ADCA - Vedecké práce v zahraničných karentovaných časopisoch impaktovaných Kategória (od 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Typ výstupu článok Rok vykazovania 2004 
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