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Proposal and performance analysis of normally-off n++ GaN/InAlN/AlN/GaN HEMTs with 1 nm thick InAlN barrier
Názov Proposal and performance analysis of normally-off n++ GaN/InAlN/AlN/GaN HEMTs with 1 nm thick InAlN barrier Autor Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ORCID Spoluautori Ostermaier C. Pozzovivo G. Basnar B. Schrenk W. Carlin J.-F. Gonschorek M. Feltin E. Grandjean N. Douvry Y. Gaquiere C. De Jaeger J.-C. Čičo Karol SAVELEK - Elektrotechnický ústav SAV Fröhlich Karol 1954 SAVELEK - Elektrotechnický ústav SAV ORCID Škriniarová Jaroslava Kováč Ján Strasser G. Pogany D. Gornik E. Zdroj.dok. . Vol. 57 (2010), p. 2144-2154 IEEE Transactions on Electron Devices Jazyk dok. eng - angličtina Druh dok. rozpis článkov z periodík (rbx) Ohlasy Marek, J., Šatka, A., Donoval, D., Molnár, M., Chvála, A., Pribytný, P., Daříček, M.: In: Proc. ADEPT. 3st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2015. ISBN 978-80-554-1033-3. P. 45 YAN, J.D. - WANG, Q. - WANG, X.L. - XIAO, H.L. - JIANG, L.J. - YIN, H.B. - FENG, C. - WANG, C.M. - QU, S.Q. - GONG, J.M. - ZHANG, B. - LI, B.Q. - WANG, Z.G. - HOU, X. In CHINESE PHYSICS LETTERS. DEC 2015, vol. 32, no. 12. CHEN, P.G. - TANG, M. - LEE, M.H. In IEEE ELECTRON DEVICE LETTERS. MAR 2015, vol. 36, no. 3, p. 259-261. ADAK, S. - SWAIN, S.K. - RAHAMAN, H. - SARKAR, C.K. In SUPERLATTICES AND MICROSTRUCTURES. DEC 2016, vol. 100, p. 306-314. WANG, Y.G. - FENG, Z.H. - LV, Y.J. - TAN, X. - DUN, S.B. - FANG, Y.L. - CAI, S.J. In CHINESE PHYSICS B. OCT 2016, vol. 25, no. 10. GOYAL, N. - FJELDLY, T.A. In IEEE TRANSACTIONS ON ELECTRON DEVICES. FEB 2016, vol. 63, no. 2, p. 881-885. XUE, J.S. - ZHANG, J.C. - HAO, Y. In APPLIED PHYSICS LETTERS. JAN 4 2016, vol. 108, no. 1. ADAK, S. - SWAIN, S.K. - RAJ, G. - RAHAMAN, H. - SARKAR, C.K. In PROCEEDINGS OF THE 3RD INTERNATIONAL CONFERENCE ON DEVICES, CIRCUITS AND SYSTEMS (ICDCS) 2016. 2016, p. 89-92. AHMEDA, K. - UBOCHI, B. - BENBAKHTI, B. - DUFFY, S.J. - SOLTANI, A. - ZHANG, W.D. - KALNA, K. In IEEE ACCESS. 2017, vol. 5, p. 20946-20952. AHMEDA, K. - UBOCHI, B. - KALNA, K. - BENBAKHTI, B. - DUFFY, S.J. - ZHANG, W. - SOLTANI, A. In 2017 12TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC). 2017, p. 37-40. MURUGAPANDIYAN, P. - RAVIMARAN, S. - WILLIAM, J. - AJAYAN, J. - NIRMAL, D. In SUPERLATTICES AND MICROSTRUCTURES. SEP 2017, vol. 109, p. 725-734. MURUGAPANDIYAN, P. - RAVIMARAN, S. - WILLIAM, J. 30 nm T-gate enhancement-mode InAlN/AlN/GaN HEMT on SiC substrates for future high power RF applications. In JOURNAL OF SEMICONDUCTORS. AUG 2017, vol. 38, no. 8. NASSER, Caram - RITTER, Dan - RUDOLPH, Matthias. Bias dependence of the access resistance in GaN HEMTs. In MIKON 2018 22nd International Microwave and Radar Conference, 2018-07-05, pp. 271-273. ADAK, Sarosij - SARKAR, Arghyadeep - SWAIN, Sanjit Kumar. Nanotechnology applications in electron devices. In Nanotechnology: Synthesis to Applications, 2017-01-01, pp. 285-295. Murugapandiyan, P., Rajya Lakshmi, V., Wasim, M., Meenakshi Sundaram, K.: Investigation of ultra-scaled AlN/GaN/InGaN double heterojunction HEMT for high-frequency applications In 2020 International Journal of Electronics Letters 8(4), pp. 472-482 HUONG, N.T. - COMYN, R. - CHENOT, S. - BRAULT, J. - DAMILANO, B. - VEZIAN, S. - FRAYSSINET, E. - COZETTE, F. - RODRIGUEZ, C. - DEFRANCE, N. - LECOURT, F. - LABAT, N. - MAHER, H. - CORDIER, Y. Selective GaN sublimation and local area regrowth for co-integration of enhancement mode and depletion mode Al(Ga)N/GaN high electron mobility transistors. In SEMICONDUCTOR SCIENCE AND TECHNOLOGY. ISSN 0268-1242, FEB 2020, vol. 36, no. 2. PAUL, S. - MONDAL, S. - SARKAR, A. Characterization and analysis of low-noise GaN-HEMT based inverter circuits. In MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS. ISSN 0946-7076, NOV 2021, vol. 27, no. 11, SI, p. 3957-3965. COZETTE, F. - HASSAN, B. - RODRIGUEZ, C. - FRAYSSINET, E. - COMYN, R. - LECOURT, F. - DEFRANCE, N. - LABAT, N. - BOONE, F. - SOLTANI, A. - JAOUAD, A. - CORDIER, Y. - MAHER, H. New barrier layer design for the fabrication of gallium nitride-metal-insulator-semiconductor-high electron mobility transistor normally-off transistor. In SEMICONDUCTOR SCIENCE AND TECHNOLOGY. ISSN 0268-1242, MAR 2021, vol. 36, no. 3. NGO, T.H. - COMYN, R. - CHENOT, S. - BRAULT, J. - NEMOZ, M. - VENNEGUES, P. - DAMILANO, B. - VEZIAN, S. - FRAYSSINET, E. - COZETTE, F. - DEFRANCE, N. - LECOURT, F. - LABAT, N. - MAHER, H. - CORDIER, Y. Selective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors. In JOURNAL OF CRYSTAL GROWTH. ISSN 0022-0248, SEP 1 2022, vol. 593. Dostupné na: https://doi.org/10.1016/j.jcrysgro.2022.126779. YANG, L.Y. - HUANG, W. - WANG, D. - ZHANG, B.Q. - ZHANG, Y.B. - ZHANG, J.Y. - CHEN, T.S. - GE, W.K. - WU, S.B. - SHEN, B. - WANG, X.Q. AlN/GaN HEMTs with if/isubmax/sub Exceeding 300 GHz by Using Ge-Doped in/iSUP++/SUP GaN Ohmic Contacts. In ACS APPLIED ELECTRONIC MATERIALS. SEP 11 2023, vol. 5, no. 9, p. 4786-4791. Dostupné na: https://doi.org/10.1021/acsaelm.3c00555. Kategória ADCA - Vedecké práce v zahraničných karentovaných časopisoch impaktovaných Kategória (od 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Typ výstupu článok Rok vykazovania 2010 Registrované v WOS Registrované v SCOPUS Registrované v CCC DOI 10.1109/TED.2010.2055292 
článok
rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2010 2009 2.445 1.768 Q1
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